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RB551V-40S2

RB551V-40S2

  • 厂商:

    CYSTEKEC(全宇昕)

  • 封装:

  • 描述:

    RB551V-40S2 - Small Signal Schottky Barrier diode - Cystech Electonics Corp.

  • 数据手册
  • 价格&库存
RB551V-40S2 数据手册
CYStech Electronics Corp. Small Signal Schottky Barrier diode Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 1/4 RB551V-30S2 Description The RB551V-30S2 is a silicon Schottky barrier diode fabricated in planar technology, and encapsulated in a small SOD-323 plastic SMD package. Symbol Outline SOD-323 RB551V-30S2 1 2 Features • Small plastic SMD package • Ultra low VF, VF=0.45 typ. at 0.5A • High reliability . Applications • High frequency rectification • Switching regulators Absolute Maximum Ratings @TA=25℃ Parameters Peak Reverse voltage DC Reverse voltage Mean rectifying current Peak forward surge current Junction Temperature Storage Temperature Symbol VRM VR IO IFSM Tj Tstg Min -40 Max 30 20 0.5 2 125 +125 Unit V V A A °C °C RB551V-30S2 CYStek Product Specification CYStech Electronics Corp. Electrical Characteristics @ TA=25℃ unless otherwise specified Parameters Forward voltage Reverse leakage current Symbol VF 1 VF 2 IR Conditions IF=100mA IF=500mA VR=20V Min - Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 2/4 Typ. - Max 0.36 0.5 100 Unit V V µA RB551V-30S2 CYStek Product Specification CYStech Electronics Corp. Characteristic Curves Forward Current Derating Curve 1 0.9 Forward Current---I O(A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 25 50 75 100 125 150 175 200 Ambient Temperature---TA(℃) 0.1 0 0.1 0.2 1000 Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 3/4 Forward Current vs Forward Voltage Forward Current---I F(mA) M ounting on glass epoxy PCBs 125℃ 100 10 7 5℃ 25℃ 1 - 25℃ 0.3 0.4 0.5 Forward Voltage---VF(V) Reverse Leakage Current vs Reverse Voltage 100000 T a= 125℃ Capacitance vs Reverse Voltage 100 f=1MHz Ta=25℃ 10000 1000 100 10 1 T a= -25℃ T a= 7 5℃ Capacitance between terminals---C T(pF) 30 Reverse Leakage Current---I R(μA) Ta=25℃ 10 0.1 0 10 20 Reverse Voltage---VR(V) 1 0 5 10 15 20 25 30 Reverse Voltage---VR(V) RB551V-30S2 CYStek Product Specification CYStech Electronics Corp. SOD-323 Dimension Spec. No. : C301S2 Issued Date : 2004.02.18 Revised Date Page No. : 4/4 Marking: K A 1 2 5H D B D Style: Pin 1.Cathode 2.Anode 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2 H J E C *: Typical DIM A B C D Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. RB551V-30S2 CYStek Product Specification
RB551V-40S2 价格&库存

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