RB751V-40S2

CYStech Electronics Corp. Small Signal Schottky diode Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 1/3 RB751V-40S2 Description Planar silicon Schottky barrier diode encapsulated in a SOD-323 plastic SMD package. Features •Small surface mounting type SC-76/SOD323 •Low reverse current and low forward voltage •High reliability Applications Low current rectification and high speed switching Symbol RB751V-40S2 Outline Absolute Maximum Ratings • Maximum Temperatures Storage Temperature Tstg .................................................................................................... -40~+125°C Junction Temperature Tj .............................................................................................................. +125°C • Maximum Voltages and Currents (Ta=25°C) Peak Reverse Voltage VRM…………………………………………………………………………. 40 V DC Reverse Voltage VR ...................................................................................................................... 30 V Mean Rectifying Current IO ........................................................................................................... 30 mA Peak Forward Surge Current IFSM………………………………….. ……………………………………….200 mA RB751V-40S2 CYStek Product Specification CYStech Electronics Corp. Characteristics (Ta=25°C) Characteristic Forward Voltage Reverse Leakage Current Capacitance Between Terminals Symbol VF IR CT IF=1mA VR=30V VR=1V, f=1MHz Condition Min. - Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 2/3 Typ 2 Max. 370 0.5 - Unit mV µA pF Characteristic Curves Forward Current Derating Curve 120 Percentage of Rated Forward Current---(%) 100 80 60 40 20 0 0 25 50 75 100 125 150 0.01 0 0.1 0.2 0.3 0.4 0.5 Ambient Temperature---TA(℃) 100 Forward Current vs Forward Voltage Forward Current---I F(mA) M ounting on glass epoxy PCBs T yp. pulse measurement 10 125℃ 1 75℃ 0.1 25℃ - 25℃ Forward Voltage---VF(V) Reverse Leakage Current vs Reverse Voltage 100 Capacitance vs Reverse Voltage 10 Capacitance between terminals---C T(pF) Reverse Leakage Current---IR(μA) 10 T a= 125℃ T a= 75℃ f=1MHz Ta=25℃ 1 0.1 T a= 25℃ 0.01 Typ. pulse easurement 0.001 0 10 20 30 Reverse Voltage---VR(V) Ta=-25℃ 1 0 2 4 6 8 10 12 14 Reverse Voltage---VR(V) RB751V-40S2 CYStek Product Specification CYStech Electronics Corp. SOD-323 Dimension Spec. No. : C345S2 Issued Date : 2004.04.27 Revised Date : Page No. : 3/3 Marking: K A 1 2 5E 5H B D Style: Pin 1.Cathode 2.Anode 2-Lead SOD-323 Plastic Surface Mounted Package, CYStek Package Code: S2 H J E C *: Typical DIM A B C D Inches Min. Max. 0.0630 0.0709 0.0453 0.0531 0.0315 0.0394 0.0098 0.0157 Millimeters Min. Max. 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 DIM E H J K Inches Min. Max. 0.0060 REF 0.0000 0.0040 0.0035 0.0070 0.0906 0.1063 Millimeters Min. Max. 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 Notes: 1.Controlling dimension : millimeters. 2.Lead thickness specified per L/F drawing with solder plating. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: 42 Alloy ; solder plating • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. RB751V-40S2 CYStek Product Specification