1N60

1N60

  • 厂商:

    DAESAN(DAESAN)

  • 封装:

  • 描述:

    1N60 - GERMANIUM DIODES - Daesan Electronics Corp.

  • 详情介绍
  • 数据手册
  • 价格&库存
1N60 数据手册
1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection efficiency · For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier GERMANIUM DIODES DO-35(GLASS) 0.075(1.9) MAX. DIA. 1.083(27.5) MIN. 0.154(3.9) MAX. Mechanical Data · Case : DO-35 glass case · Polarity : Color band denotes cathode end · Weight : Approx. 0.13 gram 0.020(0.52) MAX. DIA. 1.083(27.5) MIN. Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values) Symbols VRRM lF lFSM TSTG/TJ TL Parameters Zenerepetitive Peak Reverse Voltage Forward Continuous Crrent Peak Forward Surge Current(t=1S) Storage junction Temperature Range Maximum Lead Temperature for soldering 10S at 4mm from Case TA=25℃ Value 1N60 40 30 150 -65 to+125 230 1N60P 45 50 500 Units Volts mA mA ℃ ℃ Electrical characteristics Symbols Parameters Test Conditions IF=1mA 1N60 1N60P 1N60 1N60P 1N60 1N60P 1N60 1N60P Value Min Typ. 0.32 0.24 0.65 0.65 0.1 0.5 2.0 6.0 60 1 400 Max. 0.5 0.5 1.0 1.0 0.5 1.0 Units VF lR CJ Forward Voltage IF=30mA IF=200mA VR=15V VR=1V f=1MHz VR=10V f=1MHz Volts μA pF % ns ℃/W Reverse Current Junction Capacitance Detection Effcienc(See diagram 4) Revese Recovery time Junction Amblent Thermal Resistance η trr RθJA VI=3V f=30MHz CL=10pF RL=3.8kΩ IF=IR=1mA Irr=1mA RC=100Ω RATINGS AND CHARACTERISTIC CURVES 1N60P FIG.1-FORWARD CURRENT VERSUS FORWARD VALTAGE(TYPICAL VALUES) IF(mA) FIG.2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE IR(UA) 500 450 400 350 300 250 200 150 100 50 0 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.2 0.4 0.6 0.8 1.0 VF(V) 5 10 15 20 25 30 VR(V) FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE C(pF) FIG.4-DETECTION EFFICIENCY MEASUREMENT CIRCUIT 20 18 16 14 12 10 8 6 0 output D.U.T. Input:3VRMS CL 10pF RL 3.8kW 1 2 3 4 5 6 VR(V)
1N60
物料型号: - 型号:1N60 和 1N60P

器件简介: - 1N60和1N60P是金属硅结型二极管,主要应用于高电流、低正向电压降、极低反向电流、超高速开关特性、小温度系数正向特性以及满意的波检测效率。这些二极管可用于录音机、电视、收音机、电话作为检波器,超高速开关电路和小电流整流。

引脚分配: - 封装:DO-35玻璃封装 - 极性:色环表示阴极端 - 重量:大约0.13克

参数特性: - 1N60和1N60P的绝对额定值(限制值)和电气特性如下: - 反向重复峰值电压(VRRM):1N60为40伏,1N60P为45伏 - 25°C时的正向连续电流(IF):1N60为30毫安,1N60P为50毫安 - 正向峰值浪涌电流(IFSM,t=1S):1N60为150毫安,1N60P为500毫安 - 存储结温范围(TSTG/TJ):-65至+125℃ - 焊接时最大引脚温度(TL):230℃ - 正向电压(VF):在1mA时1N60为0.32V,1N60P为0.24V;在30mA时1N60为0.65V,1N60P为0.65V;在200mA时1N60P为0.65V - 反向电流(IR):在15V时1N60为0.1uA,1N60P为0.5uA - 结电容(CJ):在1V,1MHz时1N60为2.0pF,1N60P为6.0pF - 检测效率(n):60% - 反向恢复时间(trr):1ns - 结环境热阻(ROJA):400℃/W

功能详解: - 1N60和1N60P具有高电流能力、低正向电压降、极低反向电流、超高速开关特性、小温度系数正向特性以及满意的波检测效率。适用于录音机、电视、收音机、电话等设备中的检波器和超高速开关电路。

应用信息: - 这些二极管适用于录音机、电视、收音机、电话等设备中的检波器和超高速开关电路。

封装信息: - 封装类型:DO-35玻璃封装 - 极性标识:色环表示阴极端

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