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1N60P

1N60P

  • 厂商:

    DAESAN(DAESAN)

  • 封装:

  • 描述:

    1N60P - GERMANIUM DIODES - Daesan Electronics Corp.

  • 数据手册
  • 价格&库存
1N60P 数据手册
1N60, 1N60P Features · Metal silicon junction, majority carrier conduction · High current capability, Low forward voltage drop · Extremely low reverse current lR · Ultra speed switching characteristics · Small temperature coefficient of forward characteristics · Satisfactory Wave detection efficiency · For use in RECORDER, TV, RADIO, TELEPHONE as detectors, super high speed switching circuits, small current rectifier GERMANIUM DIODES DO-35(GLASS) 0.075(1.9) MAX. DIA. 1.083(27.5) MIN. 0.154(3.9) MAX. Mechanical Data · Case : DO-35 glass case · Polarity : Color band denotes cathode end · Weight : Approx. 0.13 gram 0.020(0.52) MAX. DIA. 1.083(27.5) MIN. Dimensions in inches and (millimeters) Absolute Ratings (Limiting Values) Symbols VRRM lF lFSM TSTG/TJ TL Parameters Zenerepetitive Peak Reverse Voltage Forward Continuous Crrent Peak Forward Surge Current(t=1S) Storage junction Temperature Range Maximum Lead Temperature for soldering 10S at 4mm from Case TA=25℃ Value 1N60 40 30 150 -65 to+125 230 1N60P 45 50 500 Units Volts mA mA ℃ ℃ Electrical characteristics Symbols Parameters Test Conditions IF=1mA 1N60 1N60P 1N60 1N60P 1N60 1N60P 1N60 1N60P Value Min Typ. 0.32 0.24 0.65 0.65 0.1 0.5 2.0 6.0 60 1 400 Max. 0.5 0.5 1.0 1.0 0.5 1.0 Units VF lR CJ Forward Voltage IF=30mA IF=200mA VR=15V VR=1V f=1MHz VR=10V f=1MHz Volts μA pF % ns ℃/W Reverse Current Junction Capacitance Detection Effcienc(See diagram 4) Revese Recovery time Junction Amblent Thermal Resistance η trr RθJA VI=3V f=30MHz CL=10pF RL=3.8kΩ IF=IR=1mA Irr=1mA RC=100Ω RATINGS AND CHARACTERISTIC CURVES 1N60P FIG.1-FORWARD CURRENT VERSUS FORWARD VALTAGE(TYPICAL VALUES) IF(mA) FIG.2-REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE IR(UA) 500 450 400 350 300 250 200 150 100 50 0 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.2 0.4 0.6 0.8 1.0 VF(V) 5 10 15 20 25 30 VR(V) FIG.3-JUNCTION CAPACITANCE VERSUS CONTINUOUS REVERSE APPLIED VOLTAGE C(pF) FIG.4-DETECTION EFFICIENCY MEASUREMENT CIRCUIT 20 18 16 14 12 10 8 6 0 output D.U.T. Input:3VRMS CL 10pF RL 3.8kW 1 2 3 4 5 6 VR(V)
1N60P 价格&库存

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1N60PW
  •  国内价格
  • 50+0.13863
  • 200+0.1298
  • 600+0.12097
  • 2000+0.11214
  • 5000+0.10331
  • 10000+0.09713

库存:2860