BAS70

BAS70 Features Low Turn-on Voltage LowForward Voltage-0.75V(Max) @ IF= 10 mA Very Low Capacitance - Less Than 2.0pF @ 0V Forhighspeedswitchingapplication, circuit protection Surface Mount Schottky Barrier Diode A L BS Mechanical Data 1 V 3 To p V ie w G 2 Case: Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any 1 C D H K J 3 3 C AT H O D E 1 AN O D E SOT-23 Dim Min Max A 2.8 00 3.0 40 B 1.2 00 1.4 00 C 0.8 90 1.110 D 0.3 70 0.5 00 G 1.7 80 2.0 40 H 0.0 13 0.1 00 J 0.0 85 0.1 77 K 0.4 50 0.6 00 L 0.8 90 1.0 20 S 2.1 00 2.5 00 V 0.4 50 0.6 00 All Dimension in mm 2 Maximum Rating S (TJ = 1505C unless otherwise noted) Rating Reverse Volt ag e Forw ard Powe r Dissipa tio n O @ TA = 25 C O Derate above 25 C Op erating Ju nc tio n an d Stor ag e Tem pe ratur e Rang e DE VI CE M AR KI NG BAS70 = BE ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage (IR = 10 mA) Total Capacitance (VR = 0 V, f = 1.0 MHz) Reverse Leakage (VR = 50 V) (VR = 70 V) Forw ard Volt ag e (IF = 1.0 mA dc ) Forw ard Volt ag e (IF = 10 mA dc ) Forw ard Volt ag e (IF = 15 mA dc ) Characteristic (TA = 25 OC un les s oth erwi se no ted ) Symbol V(B R)R CT IR VF VF VF Min 70 2.0 0.1 10 410 750 1.0 Max Unit Volt s pF m Ad c mVdc mVdc Vdc Symbol VR PF TJ, Tstg Value 70 225 1.8 -55to +1 50 Unit Volt s mW O mW/ C O C RATINGS AND CHARACTERISTIC CURVES BAS70 Figure 1. Typical Forward Voltage 100 10 100 Figure 2. Reverse Current versus ReverseVoltage T A = 1 5 0 OC O 125 C IF, Forward Current (mA) 10 IR, Reverse Current (mA) 1 .0 0 .1 0 .0 1 0 .0 0 1 8 5 OC 1 .0 8 5 OC 2 5 OC 0 0 .1 1 5 0 OC 1 2 5 OC -40 -55 0 .2 0 .3 0 .4 O O C 0 .1 C 2 5 OC 0 5 .0 10 15 20 25 30 35 40 45 50 0 .5 0 .6 0 .7 0 .8 0 .9 1 .0 V,F Fo rward Voltage (V) VR, Reverse Voltage (V) Figure 3. Typical Capacitance 1 .4 1 .2 1 .0 CT, Capacitance (pF) 0 .8 0 .6 0 .4 0 .2 0 0 5 .0 10 15 20 25 30 35 40 45 50 VR, Reverse Voltage (V)