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BZX84-C22

BZX84-C22

  • 厂商:

    DAESAN(DAESAN)

  • 封装:

  • 描述:

    BZX84-C22 - 300mW SOT-23 ZENER DIODES - Daesan Electronics Corp.

  • 数据手册
  • 价格&库存
BZX84-C22 数据手册
BZX84 SERIES Features S OT -23 .122 ( 3 . 1 ) .110 (2.8) .016 ( 0 .4) 3 . 056 ( 1 .43 ) . 052 ( 1 .33 ) 300mW SOT-23 ZENER DIODES V z R ang e 2.4 to 75V Po wer Dis s ipation 300mW Top V ie w Mounting P ad L ayout Dimens ions in inches and (millimeters ) 0.031 (0.8) 1 2 ma x . . 004 ( 0 .1) 0.035 (0.9) .007 ( 0 .175 ) .005 ( 0 .125) .037( 0.95) .037( 0.95) 0.079 (2.0) .045 ( 1.15) .037 ( 0.95) 0.037 (0.95) 0.037 (0.95) .016 ( 0 .4) .016 ( 0 .4) .102 ( 2 .6) .094 ( 2 .4) Top V ie w F eatures · S ilicon P lanar P ower Zener Diodes · T he Zener voltages are graded according to the international E 24 standard. S tandard Zener voltage tolerance is ±5%. R eplace "C " with "B " for ±2% tolerance . O ther voltage tolerances and other Zener voltages are a vailable upon reques t. · S ilicon E pitaxial P lanar Diode · F as t s witching diode in cas e S O T-23, es pecially s uited for automatic ins er tion. Mec hanic al Data C as e: S O T-23 P las tic P a c kage W eight: approx. 0.008g Maxim um R atings and T hermal C harac teris tic s P arameter Zener C urrent Power Dis s ipation at T amb = 25 ℃ T her mal R es is tance J unction to Ambient Air J unction Temperature S torage Temperature R ange N otes : (1) Device on fiberglas s s ubs trate , s ee la yout. (T A = 25 ℃ unles s otherwis e noted) S ymbol I ZM P tot R JA V alue 250 300 420 (1) (1) Unit mA mW ℃ /W ℃ ℃ Tj TS 150 - 65 to +150 BZX84 SERIES E lec tric al C harac teris tic s T ype ± 5% T ol. B ZX84-C 1V 8 B ZX84-C 2V 0 B ZX84-C 2V 2 B ZX84-C 2V 4 B ZX84-C 2V 7 B ZX84-C 3 B ZX84-C 3V 3 B ZX84-C 3V 6 B ZX84-C 3V 9 B ZX84-C 4V 3 B ZX84-C 4V 7 B ZX84-C 5V 1 B ZX84-C 5V 6 B ZX84-C 6V 2 B ZX84-C 6V 8 B ZX84-C 7V 5 B ZX84-C 8V 2 B ZX84-C 9V 1 B ZX84-C 10 B ZX84-C 11 B ZX84-C 12 B ZX84-C 13 B ZX84-C 15 B ZX84-C 16 B ZX84-C 18 B ZX84-C 20 B ZX84-C 22 B ZX84-C 24 B ZX84-C 27 B ZX84-C 30 B ZX84-C 33 B ZX84-C 36 B ZX84-C 39 B ZX84-C 43 B ZX84-C 47 B ZX84-C 51 B ZX84-C 56 B ZX84-C 62 B ZX84-C 68 B ZX84-C 75 Marking C ode TBD TBD TBD Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Y1 Y2 Y3 Y4 Y5 Y6 Y7 Y8 Y9 Y 10 Y 11 Y 12 Y 13 Y 14 Y 15 Y 16 Y 17 Y 18 Y 19 Y 20 Y 21 Zener Volta g e rang e(1) at IZT1 V Z (V) min. max. 1.70 1.90 2.10 2.20 2.50 2.80 3.10 3.40 3.70 4.00 4.40 4.80 5.20 5.80 6.40 7.00 7.70 8.50 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28.0 31.0 34.0 37.0 40.0 44.0 48.0 52.0 58.0 64.0 70.0 2.00 2.20 2.40 2.60 2.90 3.20 3.50 3.80 4.10 4.60 5.00 5.40 6.00 6.60 7.20 7.90 8.70 9.60 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32.0 35.0 38.0 41.0 46.0 50.0 54.0 60.0 66.0 72.0 79.0 T es t C urrent I ZT 1 (mA ) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 T ype ± 2% T o l. B ZX84-B 1V 8 B ZX84-B 2V 0 B ZX84-B 2V 2 B ZX84-B 2V 4 B ZX84-B 2V 7 B ZX84-B 3 B ZX84-B 3V 3 B ZX84-B 3V 6 B ZX84-B 3V 9 B ZX84-B 4V 3 B ZX84-B 4V 7 B ZX84-B 5V 1 B ZX84-B 5V 6 B ZX84-B 6V 2 B ZX84-B 6V 8 B ZX84-B 7V 5 B ZX84-B 8V 2 B ZX84-B 9V 1 B ZX84-B 10 B ZX84-B 11 B ZX84-B 12 B ZX84-B 13 B ZX84-B 15 B ZX84-B 16 B ZX84-B 18 B ZX84-B 20 B ZX84-B 22 B ZX84-B 24 B ZX84-B 27 B ZX84-B 30 B ZX84-B 33 B ZX84-B 36 B ZX84-B 39 B ZX84-B 43 B ZX84-B 47 B ZX84-B 51 B ZX84-B 56 B ZX84-B 62 B ZX84-B 68 B ZX84-B 75 Marking C ode TBD TBD TBD Z50 Z51 Z52 Z53 Z54 Z55 Z56 Z57 Z58 Z59 Z60 Z61 Z62 Z63 Z64 Z65 Z66 Z67 Z68 Z69 Z70 Z71 Z72 Z73 Z74 Z75 Z76 Z77 Z78 Z79 Z80 Z81 Z82 Z83 Z84 Z85 Z86 300mW SOT-23 ZENER DIODES (T A = 25 ℃ unles s otherwis e noted) M aximum V F = 0.9V at I F = 10mA Zener Volta g e rang e(1) at IZT1 V Z (V) min. max. 1.80 2.01 2.21 2.35 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5.00 5.49 6.08 6.66 7.35 8.04 8.92 9.80 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50.0 54.9 60.8 66.6 73.5 1.90 2.09 2.30 2.45 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.20 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52.0 57.1 63.2 69.4 76.5 T es t C urrent I ZT 1 (mA ) 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 2 2 2 2 2 2 2 2 2 2 2 2 Notes : (1) Meas ured with puls es tp = 5 ms BZX84 SERIES R atings and C harac teris tic C ur v es ( TA = 25℃ unles s otherwis e noted) 5 00 See Note 1 300mW SOT-23 ZENER DIODES 50 T j = 25°C C2V7 C3V9 C5V6 C6V8 C3V3 C4V7 I Z , ZENER C URRENT (mA) 400 40 C8V2 P d, Power Dissipation (mW) 300 30 200 20 100 10 Te st Current I Z 5.0mA 0 0 100 200 0 0 1 T A , Ambient Temperature, (°C) Fi g. 1 Power D eratin g Curve 3 4 5 6 8 9 7 V Z , ZENER VOL T AGE (V) Fi g. 2 Zener Breakdown C haracteristics C47 C43 C51 2 10 30 T j = 25°C C10 C12 10 Tj = 25°C C39 (mA) 20 C15 I Z , ZENER CURRENT (mA) C18 Test current I Z 2mA C22 8 I Z , ZENER CURRENT 6 4 Test Current I Z 2mA 10 Test current I Z 5mA C27 C33 C36 2 0 0 10 20 30 V Z , ZENER VOL T AGE (V) Fi g. 3 Zener Breakdown Characteristics 1000 0 40 10 30 40 50 60 70 80 90 V Z , ZENER VOL T AGE (V) Fi g. 4 Zener Breakdown C haracteristics 20 100 T j = 25 °C C j, JUNCTION CAP ACIT ANCE (pF) V R = 1V V R = 2V 100 V R = 1V V R = 2V 10 1 10 100 V Z , NOMINAL ZENER VOL T AGE (V) Fig. 5 Junction Capacitance vs Nominal Zener V oltage
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