MMBD101

MMBD101 Features Low Turn-on Voltage ForUHFmixerapplication Also suitablefor use in detector and ultra-fast switching circuitsLow NoiseFigure- 6.0dBTyp@1.0GHz Very Low Capacitance-LessThan1.0pF@0V HighForwardConductance-0.5V(Typ) @ IF= 10mA V Surface Mount Schottky Barrier Diode A L 2 BS 1 3 To p Vie w G Mechanical Data Case: SOT-23, Molded Plastic Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams Below Weight: 0.008 grams (approx.) Mounting Position: Any 1 2 C D 3 H K J 3 CATHODE 1 ANODE SOT-23 Dim Min Max A 2.80 0 3.04 0 B 1.20 0 1.40 0 C 0.89 0 1.110 D 0.37 0 0.50 0 G 1.78 0 2.04 0 H 0.01 3 0.10 0 J 0.08 5 0.17 7 K 0.45 0 0.60 0 L 0.89 0 1.02 0 S 2.10 0 2.50 0 V 0.45 0 0.60 0 All Di men sio n in mm MAXIMUM RATINGS MMBD101 Rating Reverse Voltage Forward Power Dissipation @ TA = 25oC Derate above 25oC Junction Temperature Storage Temperature Range DEVICE MARKING MMBD101 = 4M ELECTRICAL CHARACTERISTICS Reverse Breakdown Voltage (IR = 10 Ad c) Diode Capacitance (VR = 0, f = 1.0 MH ) z Forward Voltage (IF = 10 mAdc) Reverse Leakage (VR = 3.0 Vdc) (TA = 25oCunless otherwise noted) Symbol V(BR)R CT VF IR Min 7.0 Typ 10 0.88 0.5 0.02 1.0 0.6 0.25 Max Unit Volts pF Volts Adc Symbol VR PF TJ Value 7.0 225 1.8 +150 -55 to +150 Unit Volts mW mW/ C o o o C Tstg C Characteristic RATINGS AND CHARACTERISTIC CURVES MMBD101 Figure 1. Reverse Leakage 1.0 0.7 I R , R v e rse L ea k a ge ( A) 0.5 0.2 0.1 0.07 0.05 0.02 0.01 30 40 50 60 70 80 90 100 T A , A mb ien t T em per at u re ( OC) 11 0 120 130 0.1 0.3 0.4 0.5 0.6 V F, F or w ar d V ol ta g e (V ) 0.7 V R = 3.0 Vdc 100 T A = 8 5 oC 10 o T A = C0 Figure 2. Forward Voltage I F , F or wa rd C u rren t (mA) 1.0 T A = 25 oC Figure 3. Capacitance 1.0 11 10 0.9 N F, N o ise F ig u re (dB) C, C a p a c ita n c e (pF) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 0.6 0 1.0 2.0 V R , R e v e rs e V o lta g e (V ) 3.0 4.0 1.0 Figure 4. Noise Figure Local Oscillator Frequency = 1.0 GHz 0.8 0.7 0.1 0.2 0.5 1.0 2.0 PLO, Local Oscillator Power (mW) 5.0 10