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S2G

S2G

  • 厂商:

    DAESAN(DAESAN)

  • 封装:

  • 描述:

    S2G - CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts - Daesan Electronics Corp.

  • 数据手册
  • 价格&库存
S2G 数据手册
S2A THRU S2M Features · For surface mounted applications · Glass passivated junction · Low profile package · Builtoin strain relief, ideal for automated placement · Plastic package has Unerwrites Laboratory Flammability Classification 94V-0 · High temperature soldering guaranteed: 350℃/10 second, at terminals CURRENT 2.0 Amperes VOLTAGE 50 to 1000 Volts DO-214AA (SMB) 0.083(2.11) 0.075(1.91) 0.155(3.94) 0.130(3.30) 0.185(4.70) 0.160(4.06) 0.012(0.31) 0.006(0.15) Mechanical Data · Case : JEDEC SMB(DO-214AA) molded plastic body · Terminals : Plated axial lead solderable per MIL-STD-750, method 2026 · Polarity : Color band denotes cathode end · Mounting Position : Any · Weight : 0.003 ounce, 0.093 gram 0.096(2.44) 0.083(2.13) 0.050(1.27) 0.030(0.76) 0.008(0.203) MAX. 0.220(5.59) 0.200(5.08) Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) Symbols Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=100℃ Peak forward surge current 8.3ms half sing wave superimposed on rated load (JEDEC method) TL=100℃ Maximum instantaneous forward voltage at 2.0A Maximum reverse current at rated voltage TA=25℃ TA=125℃ VRRM VRMS VDC I(AV) IFSM VF IR RθJL RθJA trr CJ TJ TSTG S2A 50 35 50 S2B 100 70 100 S2D 200 140 200 S2G 400 280 400 2.0 50.0 1.15 1.0 125 16.0 53.0 2.0 30.0 -55 to +150 S2J 600 420 600 S2K 800 560 800 S2M 1000 700 1000 Units Volts Volts Volts Amps Amps Volts μA ℃/W μS pF ℃ Typical thermal resistance (Note 2) Typical reverse capacitance (Note 3) Typical junction capacitance (Note 1) Operating and Storage temperature Range Notes: (1) Measured at 1MHz and applied reverse voltage of 4.0V dc. (2) Thermal resistance from junction to ambient and from junction to lead mounted on 0.2×0.2"(0.5×0.5mm) copper opad areas. (3) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A RATINGS AND CHARACTERISTIC CURVES S2A THRU S2M FIG.1-FORWARD CURRENT DERATING CURVE FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1.5 10 INSTANTANEOUS FORWARD CURRENT (AMPERES) AVERAGE FORWARD CURRENT AMPERES 1.0 60Hz RESISTIVE OR INDUCTIVE LOAD 0.27X0.27"(7.0X7.0MM) COPPER PAD AREAS 1 0.5 TJ=25℃ PULSE WIDTH=300mS 1% DUTY CYCLE 0 50 60 70 80 90 100 110 120 130 140 150 0.1 LEAD TEMPERATURE (℃) 0.01 FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 50 TJ=100℃ PEAK FORWARD SURGE CURRENT (AMPERES) 40 30 20 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 0.4 0.6 0.8 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIG.4-TYPICAL REVERSE CHARACTERISTICS 10 10 INSTANTANEOUS REVERSE CURRENT (mA) TJ=125℃ 0 1 10 NUMBER OF CYCLES AT 60Hz 100 1.0 0.1 TJ=100℃ FIG.5-TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE(pF) TJ=25℃ f=1.0MHz Vsig=50mVp-p 0.01 TJ=25℃ 0.001 0 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 1 0.01 0.1 1 10 100 REVERSE VOLTAGE. VOLTS

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