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S3M

S3M

  • 厂商:

    DAESAN(DAESAN)

  • 封装:

  • 描述:

    S3M - CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts - Daesan Electronics Corp.

  • 数据手册
  • 价格&库存
S3M 数据手册
S3A THRU S3M Features · For surface mounted applications · Glass passivated junction · Low profile package · Built-in strain relief, ideal for automated placement · Plastic package has Unerwrites Laboratory Flammability Classification 94V-0 · High temperature soldering guaranteed: 250℃/10 seconds, at terminals CURRENT 3.0 Amperes VOLTAGE 50 to 1000 Volts DO-214AB (SMC) 0.124(3.15) 0.108(2.75) 0.245(6.22) 0.220(5.59) 0.280(7.11) 0.260(6.60) 0.012(0.31) 0.006(0.15) 0.103(2.62) 0.079(2.00) 0.050(1.27) 0.030(0.76) 0.008(0.203) MAX. 0.320(8.13) 0.305(7.75) Mechanical Data · Case : JEDEC SMC(DO-214AB) molded plastic body · Terminals : Plated axial lead solderable per MIL-STD-750, method 2026 · Polarity : Color band denotes cathode end · Mounting Position : Any · Weight : 0.007 ounce, 0.25 gram Dimensions in inches and (millimeters) Maximum Ratings And Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive load. For capacitive load, derate by 20%) Symbols Maximum recurrent peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=75℃ (Note 2) Peak forward surge current 8.3ms half sine wave superimposed on rated load (JEDEC method) TL=75℃ Maximum instantaneous forward voltage at 1.0A Maximum reverse current at rated voltage TA=25℃ TA=125℃ VRRM VRMS VDC I(AV) IFSM VF IR RθJL RθJA trr CJ TJ TSTG S3A 50 35 50 S3B 100 70 100 S3D 200 140 200 S3G 400 280 400 3.0 100.0 1.15 1.0 250 13.0 47.0 2.5 60.0 -55 to +175 S3J 600 420 600 S3K 800 560 800 S3M 1000 700 1000 Units Volts Volts Volts Amps Amps Volts μA ℃/W μS pF ℃ Typical thermal resistance (Note 2) Typical reverse capacitance (Note 3) Typical junction capacitance (Note 1) Operating and storage temperature range Notes: (1) Measured at 1MHz and applied reverse voltage of 4.0V dc. (2) Thermal resistance from junction to ambient and from junction to lead mounted on 0.2×0.2"(0.5×0.5mm) copper opad areas. (3) Reverse recovery test conditions:IF=0.5A, IR=1.0A, Irr=0.25A RATINGS AND CHARACTERISTIC CURVES S3A THRU S3M FIG.1-FORWARD CURRENT DERATING CURVE 3.5 AVERAGE FORWARD CURRENT AMPERES 3.0 2.5 2.0 1.5 1.0 0.5 0 50 60 70 80 90 100 110 120 130 140 150 RESISTIVE OR INDUCTIVE LOAD P.C.B.MOUNTED ON 0.3X0.3"(8.0X8.0MM) COPPER PAD AREAS FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT (AMPERES) 10 1 TJ=25℃ PULSE WIDTH=300mS 1% DUTY CYCLE 0.1 LEAD TEMPERATURE (℃) 0.01 0.6 0.8 1.0 1.2 1.3 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIG.4-TYPICAL REVERSE CHARACTERISTICS INSTANTANEOUS REVERSE CURRENT (mA) 100 TJ=125℃ FIG.3-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 200 10 PEAK FORWARD SURGE CURRENT (AMPERES) 100 TL=25℃ 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 1.0 TJ=25℃ 0.1 0 20 40 60 80 100 10 1 10 NUMBER OF CYCLES AT 60Hz 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE FIG.5-TYPICAL JUNCTION CAPACITANCE 100 JUNCTION CAPACITANCE (pF) TJ=25℃ f=1.0MHz Vsig=50mVp-p 100 TRANSIENT THERMAL IMPEDANCE (℃/W) 10 1 10 1 10 REVERSE VOLTAGE. VOLTS 100 0.1 0.01 0.1 1 10 100 t,PULSE DURATION,sec

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