SBP1060

SBP1020 THRU SBP10100 Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Guard ring for overvoltage protection · Low power loss, high efficiency · High current capability, Low forward voltage drop · High surge capability · For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications · Dual rectifier construction · High temperature soldering guaranteed : 250℃/10 seconds, 0.25" (6.35mm) from case CURRENT 10.0Amperes VOLTAGE 20 to 100 Volts ITO-220 10 0.5 3.2 0.2 0.1 4.5 0.2 6.4 0.1 2.7 0.2 2.7 0.2 3.7 0. 2 Mechanical Data · Case : JEDEC ITO-220 molded plastic body · Terminals : Lead solderable per MIL-STD-750, Method 2026 · Polarity : As marked. No suffix indicates Common Cathode, suffix "A" indicates Common Anode · Mounting Position : Any · Weight : 0.08 ounce, 2.24 gram 2.54 0.2 0.7 2.54 0.2 0.2 1 3 M in 1.3 0.2 15 0.3 0.5 2.4 PIN 1 PIN 3 Negative CT Suffix "A" 0.2 0.2 PIN 1 PIN 3 Positive CT Suffix "C" + CASE PIN 2 CASE PIN 2 Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Repetitive peak forward current(square wavr, 20KHZ) at Tc=105℃ Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 5.0A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25℃ TA=100℃ VRRM VRMS VDC I(AV) IFRM IFSM SBP 1020 SBP 1030 SBP 1040 SBP 1050 SBP 1060 SBP 1080 SBP 10100 Units Volts Volts Volts Amps Amps Amps 20 14 20 30 21 30 40 28 40 50 35 50 10.0 20.0 150.0 60 42 60 80 56 80 100 70 100 VF IR RθJC TJ TSTG 0.65 1.0 50 5.0 -65 to +125 0.75 0.80 0.85 Volts mA ℃/W 25 -65 to +150 -65 to +150 ℃ ℃ Notes: (1) Pulse test: 300μS pulse width, 1% duty cycle (2) Thermal resistance from junction to case RATINGS AND CHARACTERISTIC CURVES SBP1020 THRU SBP10100 FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 5.0 4.0 3.0 2.0 1.0 0 0 20 40 60 80 100 120 150 ── SBP1020-SBP1040 - - - SBP1050-SBP10100 RESISTIVE OR INDUCTIVE LOAD 0.375"(9.5MM) LEAD LENGTH FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 125 PEAK FORWARD SURGE CURRENT (AMPERES) 100 75 50 25 0 1 10 NUMBER OF CYCLES AT 60Hz 100 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) LEAD TEMPERATURE (℃) FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 INSTANTANEOUS FORWARD CURRENT (AMPERES) TJ=150℃ FIG.4-TYPICAL REVERSE CHARACTERISTICS 20 10 TJ=125℃ 10 INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) TJ=125℃ 1 PULSE WIDTH=300 1% DUTY CYCLE ㎲ 1 TJ=75℃ 0.1 0.1 TJ=25℃ ── SBP1020-SBP1040 - - - SBP1050-SBP10100 0.01 TJ=25℃ ── SBP1020-SBP1040 - - - SBP1050-SBP10100 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.001 0 20 40 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.5-TYPICAL JUNCTION CAPACITANCE 4000 TJ=25℃ f=1.0MHz Vsig=50mVp-p FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 TRANSIENT THERMAL IMPEDANCE,℃/ W JUNCTION CAPACITANCE (pF) 10 1000 1 ── SBP1020-SBP1040 - - - SBP1050-SBP10100 100 0.1 1 10 100 REVERSE VOLTAGE. VOLTS 0.1 0.01 0.1 1 T, PULSE DURATION, sec. 10 100