SBP735

SBP735 THRU SBP760 Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Guard ring for overvoltage protection · Low power loss, high efficiency · High current capability, Low forward voltage drop · Single rectifier construction · High surge capability · For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications · High temperature soldering guaranteed : 250℃/10 seconds, 0.25"(6.35mm) from case CURRENT 7.5Amperes VOLTAGE 35 to 60 Volts ITO-220A 10 0.5 3.2 6.4 0.1 4.5 0.2 2.7 2.7 0.2 3.7 0.2 Mechanical Data · Case : JEDEC ITO-220A molded plastic body · Terminals : Lead solderable per MIL-STD-750, Method 2026 · Polarity : As marked · Mounting Position : Any · Weight : 0.08 ounce, 2.24 gram PIN 1 + 5.08 0.7 0.2 13Min 1.3 0.2 15 0.3 0.5 2.4 PIN 1 CASE PIN 2 + Case Negative Suffix"R" CASE PIN 2 CasePositive + Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Repetitive peak forward current(square wavr, 20KHZ) at TC=105℃ Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 7.5A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25℃ TA=125℃ VRRM VRMS VDC I(AV) IFRM SBP735 35 25 35 SBP745 SBP750 50 35 50 7.5 15.0 SBP760 60 42 60 Units Volts Volts Volts Amps Amps 45 32 45 IFSM 150.0 Amps VF IR RθJC TJ TSTG 0.65 1.0 15 5.0 -65 to +150 -65 to +150 0.75 Volts 50 mA ℃/W ℃ ℃ Notes: (1) Pulse test: 300μS pulse width, 1% duty cycle (2) Thermal resistance from junction to case RATINGS AND CHARACTERISTIC CURVES SBP735 THRU SBP760 FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES 10 RESISTIVE OR INDUCTIVE LOAD FIG.2-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 175 PEAK FORWARD SURGE CURRENT (AMPERES) 150 125 100 75 50 25 TJ=TJMAX 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 8.0 6.0 4.0 2.0 0 0 50 100 150 LEAD TEMPERATURE (℃) ── SBP735--SBP745 - - - SBP750&SBP760 1 10 NUMBER OF CYCLES AT 60Hz 100 FIG.3-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 50 INSTANTANEOUS FORWARD CURRENT (AMPERES) INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) FIG.4-TYPICAL REVERSE CHARACTERISTICS 20 10 ── SBP735--SBP745 - - - SBP750&SBP760 10 TJ=125℃ PULSE WIDTH=300 1% DUTY CYCLE TJ=125℃ ㎲ 1 1 TJ=25℃ 0.1 TJ=75℃ 0.1 0.01 ── SBP735--SBP745 - - - SBP750&SBP760 0.01 0 0.1 0.2 0.3 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.001 0 20 40 60 TJ=25℃ INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.5-TYPICAL JUNCTION CAPACITANCE TRANSIENT THERMAL IMPEDANCE,℃/ W 4000 JUNCTION CAPACITANCE (pF) TJ=25℃ f=1.0MHz Vsig=50mVp-p FIG.6-TYPICAL TRANSIENT THERMAL IMPEDANCE 100 1000 10 1 100 40 0.1 ── SBP735--SBP745 - - - SBP750&SBP760 0.1 0.01 0.1 1 T, PULSE DURATION, sec. 10 100 1 10 100 REVERSE VOLTAGE. VOLTS