SBP830

SBP820 THRU SBP8100 Features · Plastic Package has Underwriters Laboratory Flammability Classification 94V-0 · Metal silicon junction, majority carrier conduction · Guard ring for overvoltage protection · Low power loss, high efficiency · High current capability, Low forward voltage drop · Single rectifier construction · High surge capability · For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications · High temperature soldering guaranteed: 250℃/10 seconds, 0.25" (6.35mm) from case CURRENT 8.0Amperes VOLTAGE 20 to 100 Volts ITO-220A 10 0.5 3.2 6.4 0.1 4.5 0.2 2.7 2.7 0.2 3.7 0.2 Mechanical Data · Case : JEDEC ITO-220A molded plastic body · Terminals : Lead solderable per MIL-STD-750, Method 2026 · Polarity : As marked · Mounting Position : Any · Weight : 0.08 ounce, 2.24 grams PIN 1 + 5.08 0.7 0.2 13Min 1.3 0.2 15 0.3 0.5 2.4 PIN 1 CASE PIN 2 + Case Negative Suffix"R" CASE PIN 2 CasePositive + Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics (Ratings at 25℃ ambient temperature unless otherwise specified, single phase, half wave, resistive or inductive load. For capacitive load, derate by 20%) Symbols Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Repetitive peak forward current(square wavr, 20KHZ) at Tc=105℃ Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) Maximum instantaneous forward voltage at 8.0A (Note 1) Maximum instantaneous reverse current at rated DC blocking voltage (Note1) Typical thermal resistance (Note 2) Operating junction temperature range Storage temperature range TA=25℃ TA=125 ℃ VRRM VRMS VDC I(AV) IFRM IFSM SBP 820 20 SBP 830 30 SBP 840 40 SBP 850 50 SBP 860 60 SBP 880 80 SBP 8100 100 Units Volts Volts Volts Amps Amps Amps 14 20 21 30 28 40 35 50 8.0 16.0 150.0 42 60 56 80 70 100 VF IR RθJC TJ TSTG 0.65 1.0 15 5.0 -65 to +125 0.75 0.80 0.85 Volts mA ℃/W 50 -65 to +150 -65 to +150 ℃ ℃ Notes: (1) Pulse test: 300μS pulse width, 1% duty cycle (2) Thermal resistance from junction to case RATINGS AND CHARACTERISTIC CURVES SBP820 THRU SBP8100 FIG.1-FORWARD CURRENT DERATING CURVE AVERAGE FORWARD CURRENT AMPERES FIG.2-TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 40 INSTANTANEOUS FORWARD CURRENT (AMPERES) 10 8.0 6.0 4.0 2.0 0 0 50 SINGLE PHASE HALF WAVE 50Hz INDUCTIVE OR RESISTIVE LOAD ── SBP820-SBP840 - - - SBP850-SBP8100 SBP820-SBP840 100 150 SBP850-SBP8100 LEAD TEMPERATURE (℃) 1.0 TJ=25℃ PULSE WIDTH=300㎲ 1% DUTY CYCLE FIG.4-TYPICAL JUNCTION CAPACITANCE 4000 2000 CAPACITANCE (pF) 1000 ── SBP850-SBP8100 - - - SBP840-SBP840 0.1 2 3 4 5 6 7 8 9 10 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) FIG.3-TYPICAL REVERSE CHARACTERISTICS 200 100 0.1 0.4 1.0 10 40 60 100 10 TC=150℃ INSTANTANEOUS REVERSE CURRENT MILL (AMPERES) REVERSE VOLTAGE. VOLTS 1.0 TC=125℃ FIG.5-MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 PEAK FORWARD SURGE CURRENT (AMPERES) 145 140 135 130 125 1.0 2.0 5.0 10 20 50 100 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) TC=75℃ 0.1 TC=25℃ 0.01 ── SBP820-SBP840 - - - SBP850-SBP8100 0.001 20 40 60 80 100 120 140 NUMBER OF CYCLES AT 60Hz PERCENT OF RATED PEAK REVERSE VOLTAGE(VOLTS)