DS1217M-L04

DS1217M Nonvolatile Read/Write Cartridge www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS1217M is a nonvolatile RAM designed for portable applications requiring a rugged and durable package. The nonvolatile cartridge has memory capacities from 64k x 8 to 512k x 8. The cartridge is accessed in continuous 32k byte banks. Bank switching is accomplished under software control by pattern recognition from the address bus. A card edge connector is required for connection to a host system. A standard 30-pin connector can be used for direct mount to a printed circuit board. Alternatively, remote mounting can be accomplished with a ribbon cable terminated with a 28-pin DIP plug. The remote method can be used to retrofit existing systems that have JEDEC 28-pin bytewide memory sites.  User Insertable  Data Retention Greater than 5 Years  Capacity to 512k x 8  Standard Bytewide Pinout Facilitates Connection to JEDEC 28-Pin DIP Through Ribbon Cable  Software-Controlled Banks Maintain 32 x 8 JEDEC 28-Pin Compatibility  Multiple Cartridges Can Reside on a Common Bus  Automatic Write Protection Circuitry Safeguards Against Data Loss ORDERING INFORMATION  Manual Switch Unconditionally Protects Data PIN-PACKAGE  Compact Size and Shape 30 Cartridge  Rugged and Durable  Operating Temperature Range: 0°C to +70°C PART DS1217M TEMP RANGE 0°C to +70°C PIN CONFIGURATION TOP VIEW Package Drawing appears at end of data sheet. Note: Some revisions of this device may incorporate deviations from published specifications known as errata. Multiple revisions of any device may be simultaneously available through various sales channels. For information about device errata, click here: www.maxim-ic.com/errata. 1 of 8 REV: 111803 DS1217M Nonvolatile Read/Write Cartridge ABSOLUTE MAXIMUM RATINGS Voltage Range on Connection Relative to Ground Operating Temperature Range Storage Temperature Range -0.3V to + 7.0V 0°C to +70°C -40°C to +70°C Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to the absolute maximum rating conditions for extended periods may affect device reliability. RECOMMENDED DC OPERATING CONDITIONS (TA = 0°C to +70°C) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS 5.0 5.5 V Power Supply Voltage VCC 4.5 Input High Voltage VIH 2.2 VCC V Input Low Voltage VIL 0 +0.8 V MAX UNITS DC ELECTRICAL CHARACTERISTICS (VCC = 5V ±10%, TA = 0°C to +70°C.) PARAMETER SYMBOL CONDITIONS MIN TYP Input Leakage Current IIL -60 +60 A I/O Leakage Current CE  VIH  VCC IIO -10 +10 A Output Current at 2.4V IOH -1.0 -2.0 mA Output Current at 0.4V IOL +2.0 +3.0 mA Standby Current CE = 2.2V ICCS1 15 25 mA Operating Current ICCO1 50 100 mA TYP MAX UNITS CIN 100 pF COUT 100 pF CAPACITANCE (TA = +25°C) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CONDITIONS 2 of 8 MIN DS1217M Nonvolatile Read/Write Cartridge AC ELECTRICAL CHARACTERISTICS (VCC = 5V ±10%, TA = 0°C to +70°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX 250 UNITS Read Cycle Time tRC Access Time tACC 250 ns OE to Output Valid tOE 125 ns CE to Output Valid tCO 210 ns OE or CE to Output Active tCOE (Note 1) Output High-Z from Deselection tOD (Note 1) Output Hold from Address Change tOH 5 ns Read Recovery Time tRR 40 ns Write Cycle Time tWC 250 ns Write Pulse Width tWP 170 ns Address Setup Time tAW 0 ns Write Recovery Time tWR 20 ns Output High-Z from WE tODW (Note 1) Output Active from WE tOEW (Note 1) 5 ns Data Setup Time tDS (Note 3) 100 ns Data Hold Time from WE tDH (Note 3) 20 ns (Note 2) ns 5 ns 125 100 ns ns Note 1: These parameters are sampled with a 5pF load and are not 100% tested. Note 2: tWP is specified as the logical AND of CE and WE tWP is measured from the latter of CE or WE going low to the earlier of CE or WE going high. tDH, tDS are measured form the earlier of CE or WE going high. Note 3: 3 of 8 DS1217M Nonvolatile Read/Write Cartridge 4 of 8 DS1217M Nonvolatile Read/Write Cartridge POWER-DOWN/POWER-UP CONDITION POWER-DOWN/POWER-UP TIMING (TA = 0°C to +70°C) PARAMETER SYMBOL CE at VIH Before Power-Down tPD VCC Slew from 4.5V to 0 (CE at VIH) CONDITIONS MIN TYP MAX UNITS 0 s tF 100 s VCC Slew from 0 to 4.5V (CE at VIH) tR 0 s CE at VIH After Power-Up tREC (Note 9) (Note 9) 2 125 ms MAX UNITS (TA = +25°C) PARAMETER Expected Data Retention Time SYMBOL tDR CONDITIONS (Note 10) MIN TYP 5 years WARNING: Under no circumstances are negative undershoots of any amplitude allowed when the device is in battery-backup mode. Note 4: WE is high for a read cycle. Note 5: OE = VIH or VIL. If OE = VIH during a write cycle, the output buffers remain in a high-impedance state. Note 6: If the CE low transition occurs simultaneously with or later than the WE high transition in Write Cycle 1, that output buffers remain in a high-impedance state in this period. If the CE high transition occurs prior to or simultaneously with the WE high transition in Write Cycle 1, the output buffers remain in a high-impedance state in this period. If WE is low or the WE low transition occurs prior to or simultaneously with the CE low transition, the output buffers remain in a highimpedance state in this period. Removing and installing the cartridge with power applied may disturb data. Note 7: Note 8: Note 9: Note 10: Each DS1217M I smarked with a 4-digit code AABB. AA designates the year of manufacture. BB designates the week of manufacture. The expected tDR is defined as starting at the date of manufacture. This parameter is assured by component selection, process control, and design. It is not measured directly during production testing. 5 of 8 DS1217M Nonvolatile Read/Write Cartridge DC TEST CONDITIONS AC TEST CONDITIONS Outputs Open t Cycle = 250ns All voltages are referenced to ground. Output Load: 100pF + 1TTL Gate Input Pulse Levels: 0 to 3.0V Timing Measurement Reference Levels Input: 1.5V Output: 1.5V Input Pulse Rise and Fall Times: 5ns DETAILED DESCRIPTION Read Mode The DS1217M executes a read cycle whenever WE (write enable) is inactive (high) and CE (cartridge enable) is active (low). The unique address specified by the address inputs (A0–A14) defines which byte of data is to be accessed. Valid data will be available to the eight data I/O pins within tACC (access time) after the last address input signal is stable, provided that CE (cartridge enable) and OE (output enable) access times are also satisfied. If OE and CE times are not satisfied, then data access must be measured from the late occurring signal (CE or OE) and the limiting parameter is either tCO for CE or tOE for OE rather than address access. Read cycles can only occur when VCC is greater than 4.5V. When VCC is less than 4.5V, the memory is inhibited and all accesses are ignored. Write Mode The DS1217M is in the write mode whenever both the WE and CE signals are in the active (low) state after address inputs are stable. The last occurring falling edge of either CE or WE will determine the start of the write cycle. The write cycle is terminated by the first rising edge of either CE or WE. All address inputs must be kept valid throughout the write cycle. WE must return to the high state for a minimum recovery time (tWR) before another cycle can be initiated. The OE control signal should be kept inactive (high) during write cycles to avoid bus contention. However, if the output bus has been enabled (CE and OE active), then WE will disable the outputs in tODW from its falling edge. Write cycles can only occur when VCC is greater than 4.5 V. When VCC is less than 4.5Vs, the memory is write-protected. Data Retention Mode The nonvolatile cartridge provides full functional capability for VCC greater than 4.5V and guarantees write protection for VCC less than 4.5V. Data is maintained in the absence of VCC without any additional support circuitry. The DS1217M constantly monitors VCC. Should the supply voltage decay, the RAM is automatically write-protected below 4.5V. As VCC falls below approximately 3.0V, the power switching circuit connects a lithium energy source to RAM to retain data. During power-up, when VCC rises above approximately 3.0V, the power switching circuit connects the external VCC to the RAM and disconnects the lithium energy source. Normal RAM operation can resume after VCC exceeds 4.5V. The DS1217M checks battery status to warn of potential data loss. Each time that VCC power is restored to the cartridge, the battery voltage is checked with a precision comparator. If the battery supply is less than 2.0V, the second memory cycle is inhibited. Battery status can, therefore, be determined by performing a read cycle after power-up to any location in memory, recording that memory location content. A subsequent write cycle can then be executed to the same memory location, altering data. If the next read cycle fails to verify the written data, the contents of the memory are questionable. In many applications, data integrity is paramount. The cartridge thus has redundant batteries and an internal isolation switch that provides for the connection of two batteries. During battery backup time, the battery with the highest voltage is selected for use. If one battery fails, the other will automatically take over. The switch between batteries is transparent to the user. A battery status warning will occur only if both batteries are less than 2.0V. Bank Switching Bank switching is accomplished via address lines A8, A9, A10, and A11. Initially, on power-up all banks are deselected so that multiple cartridges can reside on a common bus. Bank switching requires that a predefined pattern of 64 bits is matched by sequencing 4 address inputs (A8 through A11) 16 times while ignoring all other address inputs. Prior to entering the 64-bit pattern, which will set the band switch, a read cycle of 1111 (address 6 of 8 DS1217M Nonvolatile Read/Write Cartridge inputs A8 through A11) must be executed to guarantee that pattern entry starts with the first set of 3 bits. Each set of address inputs is entered into the DS1217M by executing read cycles. The first 11 cycles must match the exact bit pattern as shown in Table 2. The last five cycles must match the exact bit pattern for addresses A9, A10, and A11. However, address line 8 defines which of the 16 banks is to be enabled, or all banks are deselected, as per Table 3. Switching from one bank to another occurs as the last of the 16 read cycles is completed. A single bank is selected at any one time. A selected bank will remain active until a new bank is selected, all banks are deselected, or until power is lost. (See the DS1222 BankSwitch Chip data sheet for more detail.) Remote Connection through a Ribbon Cable Existing systems that contain 28-pin bytewide sockets can be retrofitted using a 28-pin DIP plug. The DIP plug, AMP Part Number 746616-2, can be inserted into the 28-pin site after the memory is removed. Connection to the cartridge is accomplished via a 28-pin cable connected to a 30-contact card edge connector, AMP Part Number 499188-4. The 28-pin ribbon cable must be right justified, such that positions A1 and B1 are left disconnected. For applications where the cartridge is installed or removed with power applied, both ground contacts (A1 and B1) on the card edge connector should be grounded to further enhance data integrity. Access time push-out may occur as the distance between the cartridge and the driving circuitry is increased. Table 1. Cartridge Numbering PART DS1217M 1/2-25 DS1217M 1-25 DS1217M 2-25 DS1217M 3-25 DS1217M 4-25 DENSITY NO. OF BANKS 64kB x 8 128kB x 8 256kB x 8 384kB x 8 512kB x 8 2 4 8 12 16 Table 2. Address Input Pattern ADDRESS INPUTS A8 A9 A10 A11 BIT SEQUENCE 0 1 0 1 0 1 0 1 0 1 2 1 0 1 0 3 0 1 0 1 4 0 1 0 1 5 0 1 0 1 6 1 0 1 0 7 1 0 1 0 8 0 1 0 1 9 1 0 1 0 10 0 1 0 1 11 X 0 1 0 12 X 0 1 0 13 X 0 1 0 14 X 1 0 1 15 X 1 0 1 X = See Table 3 Table 3. Bank Select Table BANK SELECTED BANKS OFF BANK 0 BANK 1 BANK 2 BANK 3 BANK 4 BANK 5 BANK 6 A8 BIT SEQUENCE 11 0 X 1 1 1 1 1 1 12 X 0 0 0 0 0 0 0 13 X 0 0 0 0 1 1 1 14 X 0 0 1 1 0 0 1 BANK 15 X 0 1 0 1 0 1 0 BANK 7 BANK 8 BANK 9 BANK 10 BANK 11 BANK 12 BANK 13 BANK 14 BANK 15 7 of 8 A8 BIT SEQUENCE 1 1 1 1 1 1 1 1 1 0 1 1 1 1 1 1 1 1 1 0 0 0 0 1 1 1 1 1 0 0 1 1 0 0 1 1 1 0 1 0 1 0 1 0 1 DS1217M Nonvolatile Read/Write Cartridge PACKAGE INFORMATION For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. Maxim/Dallas Semiconductor cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim/Dallas Semiconductor product. No circuit patent licenses are implied. Maxim/Dallas Semiconductor reserves the right to change the circuitry and specifications without notice at any time. Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2003 Maxim Integrated Products 8 of 8