DS1642
Nonvolatile Timekeeping RAM
www.maxim-ic.com
FEATURES
PIN CONFIGURATION
Integrated NV SRAM, Real-Time Clock,
Crystal, Power-Fail Control Circuit, and
Lithium Energy Source
Standard JEDEC Bytewide 2k x 8 Static
RAM Pinout
Clock Registers are Accessed Identically to
the Static RAM. These Registers are
Resident in the Eight Top RAM Locations
Totally Nonvolatile with Over 10 Years of
Operation in the Absence of Power
Access Times of 70ns and 100ns
Quartz Accuracy ±1 Minute a Month at
+25°C, Factory Calibrated
BCD-Coded Year, Month, Date, Day, Hours,
Minutes, and Seconds with Leap Year
Compensation Valid Up to 2100
Power-Fail Write Protection Allows for
±10% VCC Power Supply Tolerance
Lithium Energy Source is Electrically
Disconnected to Retain Freshness Until
Power is Applied for the First Time
UL Recognized
TOP VIEW
24
VCC
23
A8
3
22
A9
A4
4
21
WE
A3
5
20
OE
A2
6
19
A10
A1
7
18
CE
A0
8
17
DQ7
DQ0
9
16
DQ6
DQ1
10
15
DQ5
DQ2
11
14
DQ4
GND
12
13
DQ3
A7
1
A6
2
A5
DS1642
ENCAPSULATED DIP
ORDERING INFORMATION
PART
DS1642-70+
DS1642-70
DS1642-100+
DS1642-100
VOLTAGE
RANGE
(V)
5.0
5.0
5.0
5.0
TEMP RANGE
0°C to +70°C
0°C to +70°C
0°C to +70°C
0°C to +70°C
PIN-PACKAGE TOP MARK
24 EDIP (0.720a)
24 EDIP (0.720a)
24 EDIP (0.720a)
24 EDIP (0.720a)
DS1642+70
DS1642-70
DS1642+100
DS1642-100
*DS9034-PCX, DS9034I-PCX, DS9034-PCX+ required (must be ordered separately).
A “+" indicates a lead(Pb)-free product. The top mark will include a “+” symbol on lead-free devices.
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REV: 060706
DS1642
PIN DESCRIPTION
PIN
1
2
3
4
5
6
7
8
19
22
23
9
10
11
13
14
15
16
17
12
18
20
21
24
NAME
A7
A6
A5
A4
A3
A2
A1
A0
A10
A9
A8
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
GND
CE
OE
WE
VCC
FUNCTION
Address Input
Data Input/Output
Ground
Active-Low Chip-Enable Input
Active-Low Output-Enable Input
Active-Low Write-Enable Input
Power-Supply Input
DESCRIPTION
The DS1642 is a 2k x 8 nonvolatile static RAM and a full-function real-time clock (RTC), both of which
are accessible in a bytewide format. The nonvolatile time keeping RAM is pin and function equivalent to
any JEDEC-standard 2k x 8 SRAM. The device can also be easily substituted in ROM, EPROM, and
EEPROM sockets, providing read/write nonvolatility and the addition of the real-time clock function. The
real-time clock information resides in the eight uppermost RAM locations. The RTC registers contain
year, month, date, day, hours, minutes, and seconds data in 24-hour BCD format. Corrections for the day
of the month and leap year are made automatically. The RTC clock registers are double-buffered to avoid
access of incorrect data that can occur during clock update cycles. The double-buffered system also
prevents time loss as the timekeeping countdown continues unabated by access to time register data. The
DS1642 also contains its own power-fail circuitry, which deselects the device when the VCC supply is in
an out-of-tolerance condition. This feature prevents loss of data from unpredictable system operation
brought on by low VCC as errant access and update cycles are avoided.
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DS1642
CLOCK OPERATIONS–READING THE CLOCK
While the double-buffered register structure reduces the chance of reading incorrect data, internal updates
to the DS1642 clock registers should be halted before clock data is read to prevent reading of data in
transition. However, halting the internal clock register updating process does not affect clock accuracy.
Updating is halted when a 1 is written into the read bit, the 7th most significant bit in the control register.
As long as a 1 remains in that position, updating is halted. After a halt is issued, the registers reflect the
count, that is day, date, and time that was current at the moment the halt command was issued. However,
the internal clock registers of the double-buffered system continue to update so that the clock accuracy is
not affected by the access of data. All of the DS1642 registers are updated simultaneously after the clock
status is reset. Updating occurs within a second after the read bit is written to 0.
Figure 1. DS1642 BLOCK DIAGRAM
Table 1. TRUTH TABLE
VCC
5V ±10%
VBAT
4.5V) the DS1642 can be accessed as described above by read
or write cycles. However, when VCC is below the power-fail point VPF (point at which write protection
occurs) the internal clock registers and RAM is blocked from access. This is accomplished internally by
inhibiting access via the CE signal. When VCC falls below the level of the internal battery supply, power
input is switched from the VCC pin to the internal battery and clock activity, RAM, and clock data are
maintained from the battery until VCC is returned to nominal level.
BATTERY LONGEVITY
The DS1642 has a lithium power source that is designed to provide energy for clock activity, and clock
and RAM data retention when the VCC supply is not present. The capability of this internal power supply
is sufficient to power the DS1642 continuously for the life of the equipment in which it is installed. For
specification purposes, the life expectancy is 10 years at 25C with the internal clock oscillator running in
the absence of VCC power. Each DS1642 is shipped from Dallas Semiconductor with its lithium energy
source disconnected, guaranteeing full energy capacity. When VCC is first applied at a level greater than
VPF, the lithium energy source is enabled for battery backup operation. Actual life expectancy of the
DS1642 will be much longer than 10 years since no lithium battery energy is consumed when VCC is
present.
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DS1642
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground……………………………………………..-0.3V to +7.0V
Operating Temperature Range……………………………………………...0°C to +70°C (noncondensing)
Storage Temperature Range………………………………………………………………...-20°C to +70°C
Soldering Temperature (EDIP, leads)……………………………………..+260C for 10 seconds (Note 7)
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect
reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER
SYMBOL
MIN
Logic 1 Voltage
(All Inputs)
VIH
Logic 0 Voltage
(All Inputs)
VIL
TYP
MAX
UNITS
NOTES
2.2
VCC + 0.3
V
1
-0.3
0.8
V
1
TYP
MAX
UNITS
NOTES
DC ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
MIN
Active Supply Current
ICC
15
50
mA
2, 3
TTL Standby Current
( CE = VIH)
ICC1
1
3
mA
2, 3
CMOS Standby Current
( CE < VCC - 0.2V)
ICC2
1
3
mA
2, 3
Input Leakage Current
(Any Input)
IIL
-1
+1
A
I/O Leakage Current
(Any Output)
IOL
-1
+1
A
Output Logic 1 Voltage
(IOUT = -1.0mA)
VOH
2.4
Output Logic 0 Voltage
(IOUT = +2.1mA)
VOL
Write Protection Voltage
VPF
1
0.4
4.25
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4.37
4.50
1
V
1
DS1642
AC CHARACTERISTICS—READ CYCLE
PARAMETER
SYMBOL
70ns ACCESS
MIN MAX
70
100ns ACCESS
MIN
MAX
100
UNITS
Read Cycle Time
tRC
Address Access Time
tAA
CE
to DQ Low-Z
tCEL
CE
Access Time
tCEA
70
100
ns
CE
Data Off Time
tCEZ
25
35
ns
OE
to DQ Low-Z
tOEL
OE
Access Time
tOEA
35
55
ns
OE
Data Off Time
tOEZ
25
35
ns
Output Hold from Address
tOH
70
5
5
5
5
READ CYCLE TIMING DIAGRAM
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100
ns
ns
5
5
ns
ns
ns
NOTES
DS1642
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5.0V ±10, TA = 0°C to 70°C.)
PARAMETER
SYMBOL
70ns ACCESS
MIN MAX
70
100ns ACCESS
MIN
MAX
100
UNITS
Write Cycle Time
tWC
Address Setup Time
tAS
0
0
ns
Pulse Width
tWEW
50
70
ns
Pulse Width
tCEW
60
75
ns
Data Setup Time
tDS
30
40
ns
Data Hold Time
tDH
0
0
ns
Address Hold Time
tAH
5
5
ns
Data Off Time
tWEZ
WE
CE
WE
Write Recovery Time
tWR
25
5
8 of 12
35
5
ns
ns
ns
NOTES
DS1642
WRITE CYCLE TIMING DIAGRAM—WRITE-ENABLE CONTROLLED
WRITE CYCLE TIMING DIAGRAM—CHIP-ENABLE CONTROLLED
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DS1642
POWER-UP/POWER-DOWN AC CHARACTERISTICS
(TA = 0°C to +70°C)
PARAMETER
SYMBOL
MIN
or WE at VIH Before Power-Down
tPD
0
s
VCC Fall Time: VPF (MAX) to VPF (MIN)
tF
300
s
VCC Fall Time: VPF (MIN) to VBAT
tFB
10
s
VCC Rise Time: VPF (MIN) to VPF (MAX)
tR
0
s
CE
Power-up Recover Time
tREC
Expected Data Retention Time
(Oscillator On)
tDR
TYP
MAX
35
10
UNITS
NOTES
ms
years
4, 5
MAX
UNITS
NOTES
POWER-UP/POWER-DOWN WAVEFORM TIMING
CAPACITANCE
(TA = +25°C)
PARAMETER
SYMBOL
MIN
TYP
Capacitance on All Pins (except DQ)
CIN
7
pF
Capacitance on DQ Pins
CO
10
pF
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DS1642
AC TEST CONDITIONS
Output Load: 100pF + 1TTL Gate
Input Pulse Levels: 0.0 to 3.0V
Timing Measurement Reference Levels:
Input: 1.5V
Output: 1.5V
Input Pulse Rise and Fall Times: 5ns
NOTES:
1) Voltages are referenced to ground.
2) Typical values are at 25C and nominal supplies.
3) Outputs are open.
4) Data retention time is at 25C.
5) Each DS1642 has a built-in switch that disconnects the lithium source until VCC is first applied by the
user. The expected tDR is defined as a cumulative time in the absence of VCC starting from the time
power is first applied by the user.
6) Real-time clock modules can be successfully processed through conventional wave-soldering
techniques as long as temperature exposure to the lithium energy source contained within does not
exceed +85C. Post-solder cleaning with water washing techniques is acceptable, provided that
ultrasonic vibration is not used to prevent damage to the crystal.
11 of 12
DS1642
PACKAGE INFORMATION
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages.
PACKAGE TYPE
PACKAGE CODE
DOCUMENT NO.
24 EDIP
MDF24+1
21-0245
DS1642 24-PIN PACKAGE
PKG
DIM.
A IN.
MM
B IN.
MM
C IN.
MM
D IN.
MM
E IN.
MM
F IN.
MM
G IN.
MM
H IN.
MM
J IN.
MM
K IN.
MM
24-PIN
MIN
MAX
1.270
1.290
37.34
37.85
0.675
0.700
17.15
17.78
0.315
0.335
8.00
78.51
0.075
0.105
1.91
2.67
0.015
0.030
0.38
0.76
0.140
0.180
3.56
4.57
0.090
0.110
2.29
2.79
0.590
0.630
14.99
16.00
0.010
0.018
0.25
0.45
0.015
0.025
0.43
0.58
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Maxim/Dallas Semiconductor cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim/Dallas Semiconductor product.
No circuit patent licenses are implied. Maxim/Dallas Semiconductor reserves the right to change the circuitry and specifications without notice at any time.
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© 2006 Maxim Integrated Products
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