DS9502P

DS9502 ESD Protection Diode www.dalsemi.com SPECIAL FEATURES § Zener characteristic with voltage snap–back to protect against ESD hits SYMBOL AND CONVENTIONS C IC § High avalanche voltage, low leakage and low capacitance avoid signal attenuation VCA A § Compatible to all 5V logic families § Space saving, low inductance TSOC surface mount package PACKAGE OUTLINE TSOC SURFACE MOUNT PACKAGE § Symmetric dual–port bondout to maximize energy dissipation in protection device 1 6 2 5 3 4 § Industrial temperature range SIDE VIEW TOP VIEW 3.7 X 4.0 X 1.5 mm See Mech. Drawings Section ORDERING INFORMATION DS9502P 6-lead TSOC package DESCRIPTION This DS9502 was designed as an additional ESD protection for SRAM–based battery–buffered portable memory modules. The memory chips used for these modules have already a strong ESD–protection structure on their I/O line. Together with the DS9502 the ESD protection level is raised to more than 27 kV (IEC 801–2 Reference model). In case of abnormal ESD hits beyond its maximum ratings the DS9502 will eventually fail “short” thus preventing further damage. During normal operation the DS9502 behaves like a regular 7.5V Zener Diode. When the voltage exceeds the trigger voltage, the I/V characteristic of the device will “snapback” allowing the same or higher amount of current to flow, but at a significantly lower voltage. As long as a minimum current or voltage is maintained, the device will stay in the “snapback mode”. If the voltage or the current falls below the holding voltage or holding current, the device will abruptly change to its normal mode and conduct only a small leakage current. 1 of 3 102199 DS9502 DC CHARACTERISTICS Figure 1 DC CHARACTERISTICS DETAIL DRAWING Figure 2 TEST PULSE WAVEFORM Figure 3 TYPICAL APPLICATION Figure 4 2 of 3 102199 DS9502 PHYSICAL SPECIFICATIONS Size Weight See mechanical drawing 0.5 grams ABSOLUTE MAXIMUM RATINGS* Operating Temperature Storage Temperature Soldering Temperature Continuous DC Current Through Package * –40°C to +85°C –55°C to +125°C 260°C for 10 seconds 80 mA This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. ELECTRICAL CHARACTERISTICS (-40°C to +85°C) PARAMETER SYMBOL Leakage Current IL Avalanche Voltage VAV MIN TYP MAX UNITS NOTES 30 100 nA 2 7.8 V 1,3 1 7.4 Trigger Voltage VTRIGGER 9.0 9.5 V Trigger Current ITRIGGER 600 1000 mA Holding Voltage VHOLD 5.5 V Holding Current IHOLD 30 mA 1 Forward Voltage (-10 mA) VF -0.7 -0.8 V 4 Forward Current (-0.7V) IF -10 -100 mA 4 Maximum Peak Current IPP 2.0 A 5 Continuous Current Through Diode ICC mA 6 ±160 CAPACITANCE (tA=25°C) PARAMETER Junction Capacitance (5V) SYMBOL CJ5 Junction Capacitance (0V) CJ0 MIN TYP 55 MAX 100 UNITS pF NOTES 1 pF 1 UNITS K/W NOTES K/W THERMAL RESISTANCE PARAMETER Junction To Package SYMBOL MIN TYP RΘ JC MAX 75 Junction To Ambient RΘ JA 200 NOTES: 1. All voltages are referenced from Cathode to Anode. 2. At 7.0V. 3. At 0.3 µA. 4. Typical values at room temperature. 5. See pulse specification. 6. In either direction (forward or reverse) through the diode (pins 1 & 6 and 2 & 5 tied together, otherwise +80 mA max). 3 of 3 102199