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MAX1993ETG+TG40

MAX1993ETG+TG40

  • 厂商:

    AD(亚德诺)

  • 封装:

    WFQFN24

  • 描述:

    MAX1993 QUICK-PWM STEP-DOWN CON

  • 数据手册
  • 价格&库存
MAX1993ETG+TG40 数据手册
19-2661; Rev 1; 9/05 Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Inductor Saturation Protection Accurate Current Limit Ultra-High Efficiency Quick-PWM with 100ns Load-Step Response MAX1992 1.8V/2.5V Fixed or 0.7V to 5.5V Adjustable Output Range MAX1993 External Reference Input Dynamically Selectable Output Voltage (0.7V to 5.5V) Optional Power-Good and Fault Blanking During Transitions ±1% VOUT Accuracy Over Line and Load 2V to 28V Battery Input Range (VIN) 200/300/450/600kHz Switching Frequency Overvoltage/Undervoltage Protection Option 1.7ms Digital Soft-Start Drives Large Synchronous Rectifier FETs 2V ±0.7% Reference Output Power-Good Window Comparator Ordering Information TEMP RANGE PIN-PACKAGE MAX1992ETG PART -40°C to +85°C 24 Thin QFN 4mm × 4mm MAX1992ETG+ -40°C to +85°C 24 Thin QFN 4mm × 4mm MAX1993ETG -40°C to +85°C 24 Thin QFN 4mm × 4mm MAX1993ETG+ -40°C to +85°C 24 Thin QFN 4mm × 4mm + Denotes lead-free package. Pin Configurations Active Termination Buses (MAX1993) CPU/Chipset/GPU with Dynamic Voltage Cores (MAX1993) BST LX DH V+ SKIP 15 14 13 12 CSN PGND 20 11 CSP AGND 21 VCC 22 MAX1992 10 OUT 9 FB SHDN 23 8 N.C. OVP/UVP 24 7 N.C 1 2 3 4 5 6 REF DDR Memory Termination (MAX1993) 16 ILIM 1.8V and 2.5V Supplies 17 19 N.C. Core/IO Supplies as Low as 0.7V 18 VDD TON Notebook Computers DL TOP VIEW Applications PGOOD Single-stage buck conversion allows the MAX1992/ MAX1993 to directly step down high-voltage batteries for the highest possible efficiency. Alternatively, two-stage conversion (stepping down from another system supply rail instead of the battery) at the maximum switching frequency allows the minimum possible physical size. The MAX1992 powers the CPU core, chipset, DRAM, or other supply rails as low as 0.7V. The MAX1993 powers chipsets and graphics processor cores, which require dynamically adjustable output voltages. The MAX1993 provides a tracking input that can be used for active termination buses. The MAX1992/MAX1993 are available in a 24-pin thin QFN package with optional overvoltage and undervoltage protection. For dual step-down PWM controllers with inductor saturation protection, external reference input voltage, and dynamically selectable output voltages, refer to the MAX1540/MAX1541 data sheet. ♦ ♦ ♦ ♦ ♦ LSAT The MAX1992/MAX1993 pulse-width modulation (PWM) controllers provide high-efficiency, excellent transient response, and high DC output accuracy. The devices step down high-voltage batteries to generate lowvoltage CPU core or chipset/RAM supplies in notebook computers. Maxim’s proprietary Quick-PWM™ quick-response, constant on-time PWM control scheme handles wide input/output voltage ratios with ease and provides 100ns “instant-on” response to load transients, while maintaining a relatively constant switching frequency. Efficiency is enhanced by the ability to drive very large synchronousrectifier MOSFETs. Current sensing to ensure reliable overload and inductor saturation protection is available using an external current-sense resistor in series with the output. Alternatively, the controller can sense the current across the synchronous rectifier alone or use lossless inductor sensing for lowest power dissipation. Features THIN QFN 4mm x 4mm A "+" SIGN WILL REPLACE THE FIRST PIN INDICATOR ON LEAD-FREE PACKAGES. Quick-PWM is a trademark of Maxim Integrated Products, Inc. Pin Configurations continued at end of data sheet. ________________________________________________________________ Maxim Integrated Products For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at 1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com. 1 MAX1992/MAX1993 General Description MAX1992/MAX1993 Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages ABSOLUTE MAXIMUM RATINGS (Note 1) V+ to AGND............................................................-0.3V to +30V VCC to AGND............................................................-0.3V to +6V VDD to PGND............................................................-0.3V to +6V PGOOD, ILIM, SKIP, SHDN to AGND ......................-0.3V to +6V REFIN, FB, CSP to AGND.........................................-0.3V to +6V GATE, OD to GND (MAX1993 only) .........................-0.3V to +6V TON, OVP/UVP, LSAT to AGND .................-0.3V to (VCC + 0.3V) REF, OUT to AGND ....................................-0.3V to (VCC + 0.3V) FBLANK to GND (MAX1993 only) ..............-0.3V to (VCC + 0.3V) DL to PGND................................................-0.3V to (VDD + 0.3V) CSN to AGND............................................................-2V to +30V DH to LX .....................................................-0.3V to (BST + 0.3V) LX to AGND ...............................................................-2V to +30V BST to LX..................................................................-0.3V to +6V AGND to PGND (MAX1992 only) ..........................-0.3V to +0.3V REF Short Circuit to AGND.........................................Continuous Continuous Power Dissipation (TA = +70°C) 24-Pin 4mm x 4mm Thin QFN (derated 20.8mW/°C above +70°C)...........................1667mW Operating Temperature Range MAX199_ETG ..................................................-40°C to +85°C Junction Temperature ......................................................+150°C Storage Temperature Range .............................-65°C to +150°C Lead Temperature (soldering, 10s) .................................+300°C Note 1: For the MAX1993, AGND and PGND refer to a single pin designated GND. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS (V+ = 15V, VCC = VDD = SHDN = 5V, SKIP = GND, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS PWM CONTROLLER Input Voltage Range Output Voltage Accuracy (MAX1992 Fixed) Feedback Voltage Accuracy (MAX1992 Adjustable) Feedback Voltage Accuracy (MAX1993) VIN VBIAS VCC, VDD VOUT MAX1992 V+ = 4.5V to 28V, SKIP = VCC (Note 2) FB = VCC 1.782 1.8 1.818 0.693 0.7 0.707 REFIN = 0.35 × REF 0.693 0.7 0.707 REFIN = REF 1.980 2 2.020 VFB MAX1993 V+ = 4.5V to 28V, SKIP = VCC (Note 2) 0.1 VCC = 4.5V to 5.5V, V+ = 4.5V to 28V IFB MAX1992 % 0.25 % -0.1 +0.1 µA 0.7 5.5 V FB = GND 90 190 FB = VCC or adjustable 70 145 270 400 800 1400 10 25 Ω 0.3 0.4 V RDISCHARGE 0.2 tSS V V ILOAD = 0 to 3A, SKIP = VCC ROUT V V OUT Synchronous Rectifier Discharge Mode Turn-On Level 2 5.5 2.525 MAX1993 Soft-Start Ramp Time 4.5 2.5 Output Adjust Range OUT Discharge Mode On-Resistance 28 2.475 MAX1992 V+ = 4.5V to 28V, SKIP = VCC (Note 2) Line Regulation Error OUT Input Resistance 2 FB = GND VFB Load Regulation Error FB Input Bias Current Battery voltage, V+ Rising edge on SHDN to full current limit 1.7 _______________________________________________________________________________________ 350 kΩ ms Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages MAX1992/MAX1993 ELECTRICAL CHARACTERISTICS (continued) (V+ = 15V, VCC = VDD = SHDN = 5V, SKIP = GND, TA = 0°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) PARAMETER SYMBOL CONDITIONS TON = GND (600kHz) On-Time tON Minimum Off-Time tOFF(MIN) Quiescent Supply Current (VCC) ICC Quiescent Supply Current (VDD) IDD Quiescent Supply Current (V+) IV+ V+ = 15V, VOUT = 1.5V (Note 3) MIN TYP MAX 170 194 219 TON = REF (450kHz) 213 243 273 TON = open (300kHz) 316 352 389 TON = VCC (200kHz) 461 516 571 (Note 3) 400 500 FB forced above the regulation point, LSAT = GND 0.55 0.85 UNITS ns ns mA FB forced above the regulation point, VLSAT > 0.5V 1 20V) AC adapters. Low-current applications usually require less attention. The high-side MOSFET (NH) must be able to dissipate the resistive losses plus the switching losses at both VIN(MIN) and VIN(MAX). Ideally, the losses at VIN(MIN) should be roughly equal to the losses at VIN(MAX), with lower losses in between. If the losses at VIN(MIN) are significantly higher, consider increasing the size of NH. Conversely, if the losses at VIN(MAX) are significantly higher, consider reducing the size of NH. If VIN does not vary over a wide range, maximum efficiency is achieved by selecting a high-side MOSFET (N H) that has conduction losses equal to the switching losses. 30 Choose a low-side MOSFET (NL) that has the lowest possible on-resistance (RDS(ON)), comes in a moderatesized package (i.e., 8-pin SO, DPAK, or D2PAK), and is reasonably priced. Ensure that the MAX1992/MAX1993 DL gate driver can supply sufficient current to support the gate charge and the current injected into the parasitic drain-to-gate capacitor caused by the high-side MOSFET turning on; otherwise, cross-conduction problems can occur. Switching losses are not an issue for the low-side MOSFET since it is a zero-voltage switched device when used in the step-down topology. Power MOSFET Dissipation Worst-case conduction losses occur at the duty factor extremes. For the high-side MOSFET (NH), the worstcase power dissipation due to resistance occurs at minimum input voltage: ⎛V ⎞ 2 PD(NH Re sistive) = ⎜ OUT ⎟ (ILOAD ) RDS(ON) ⎝ VIN ⎠ Generally, use a small high-side MOSFET to reduce switching losses at high-input voltages. However, the RDS(ON) required to stay within package power-dissipation limits often limits how small the MOSFET can be. The optimum efficiency occurs when the switching losses equal the conduction (RDS(ON)) losses. Highside switching losses do not become an issue until the input is greater than approximately 15V. Calculating the power dissipation in high-side MOSFETs (NH) due to switching losses is difficult, since it must allow for difficult-to-quantify factors that influence the turn-on and turn-off times. These factors include the internal gate resistance, gate charge, threshold voltage, source inductance, and PC board layout characteristics. The following switching loss calculation provides only a very rough estimate and is no substitute for breadboard evaluation, preferably including verification using a thermocouple mounted on NH: PD(NH (VIN(MAX) ) Switching) = 2 CRSSfSW ILOAD IGATE where CRSS is the reverse transfer capacitance of NH, and IGATE is the peak gate-drive source/sink current (1A typ). Switching losses in the high-side MOSFET can become a heat problem when maximum AC adapter voltages are applied, due to the squared term in the switchingloss equation (C x VIN2 x fSW). ______________________________________________________________________________________ Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages ⎡ ⎛V ⎞⎤ 2 PD(NL Re sistive) = ⎢1 − ⎜ OUT ⎟ ⎥(ILOAD ) RDS(ON) V ⎢⎣ ⎝ IN ⎠ ⎥⎦ The absolute worst case for MOSFET power dissipation occurs under heavy overload conditions that are greater than ILOAD(MAX) but are not high enough to exceed the current limit and cause the fault latch to trip. To protect against this possibility, “overdesign” the circuit to tolerate: ⎛ ILOAD(MAX)LIR ⎞ ILOAD = IVALLEY(MAX) + ⎜ ⎟ 2 ⎝ ⎠ where I VALLEY(MAX) is the maximum valley current allowed by the current-limit circuit, including threshold tolerance and sense-resistance variation. The MOSFETs must have a relatively large heatsink to handle the overload power dissipation. Choose a Schottky diode (DL) with a forward voltage drop low enough to prevent the low-side MOSFET’s body diode from turning on during the dead time. As a general rule, select a diode with a DC current rating equal to 1/3 the load current. This diode is optional and can be removed if efficiency is not critical. Applications Information Dropout Performance The output voltage adjustable range for continuous-conduction operation is restricted by the nonadjustable minimum off-time one-shot. For best dropout performance, use the slower (200kHz) on-time setting. When working with low input voltages, the duty-factor limit must be calculated using worst-case values for on- and off-times. Manufacturing tolerances and internal propagation delays introduce an error to the TON K-factor. This error is greater at higher frequencies (Table 3). Also, keep in mind that transient response performance of buck regulators operated too close to dropout is poor, and bulk output capacitance must often be added (see the VSAG equation in the Design Procedure section). The absolute point of dropout is when the inductor current ramps down during the minimum off-time (ΔIDOWN) as much as it ramps up during the on-time (ΔIUP). The ratio h = ΔIUP/ΔIDOWN indicates the controller’s ability to slew the inductor current higher in response to increased load, and must always be greater than 1. As h approaches 1, the absolute minimum dropout point, the inductor current cannot increase as much during each switching cycle, and V SAG greatly increases, unless additional output capacitance is used. A reasonable minimum value for h is 1.5, but adjusting this up or down allows trade-offs between VSAG, output capacitance, and minimum operating voltage. For a given value of h, the minimum operating voltage can be calculated as: ⎡ ⎤ ⎢ ⎥ ⎢ VOUT + VDROP1 ⎥ VIN(MIN) = ⎢ ⎥ + VDROP2 − VDROP1 ⎢ ⎛ h × t OFF(MIN) ⎞ ⎥ ⎟⎥ ⎢1 − ⎜ K ⎠⎦ ⎣ ⎝ where VDROP1 and VDROP2 are the parasitic voltage drops in the discharge and charge paths (see the OnTime One-Shot (TON) section), tOFF(MIN) is from the Electrical Characteristics, and K is taken from Table 3. The absolute minimum input voltage is calculated with h = 1. If the calculated VIN(MIN) is greater than the required minimum input voltage, then operating frequency must be reduced or output capacitance added to obtain an acceptable VSAG. If operation near dropout is anticipated, calculate VSAG to be sure of adequate transient response. A dropout design example follows: VOUT = 2.5V fSW = 300kHz K = 3.3µs, worst-case KMIN = 3.0µs tOFF(MIN) = 500ns VDROP1 = VDROP2 = 100mV h = 1.5 ⎡ ⎤ ⎢ ⎥ 2.5V + 0.1V ⎥ ⎢ VIN(MIN) = ⎢ + 0.1V − 0.1V = 3.47V ⎛ ⎞⎥ ⎢ 1 − ⎜ 1.5 × 500ns ⎟ ⎥ ⎢⎣ ⎝ 3.0μs ⎠ ⎥⎦ ______________________________________________________________________________________ 31 MAX1992/MAX1993 If the high-side MOSFET chosen for adequate RDS(ON) at low battery voltages becomes extraordinarily hot when subjected to VIN(MAX), consider choosing another MOSFET with lower parasitic capacitance. For the low-side MOSFET (NL) the worst-case power dissipation always occurs at maximum battery voltage: MAX1992/MAX1993 Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages REF R4 R1 REFIN B R3 C1 R2 MAX1993 A GND 1kΩ 1000pF GATE 1kΩ 1000pF Figure 11. Multiple Output Voltage Settings Calculating again with h = 1 and the typical K-factor value (K = 3.3µs) gives the absolute limit of dropout: ⎡ ⎤ ⎢ ⎥ 2.5V + 0.1V ⎥ ⎢ VIN(MIN) = ⎢ + 0.1V − 0.1V = 3.06V ⎛ ⎞⎥ ⎢ 1 − ⎜ 1.5 × 500ns ⎟ ⎥ ⎢⎣ ⎝ 3.3μs ⎠ ⎥⎦ Therefore, VIN must be greater than 3.06V, even with very large output capacitance, and a practical input voltage with reasonable output capacitance would be 3.47V. Multiple Output Voltage Settings (MAX1993 Only) While the MAX1993 is optimized to work with applications that require two dynamic output voltages, it can produce three or more output voltages if required by using discrete logic or a DAC. Figure 11 shows an application circuit providing four voltage levels using discrete logic. Switching resistors in and out of the resistor network changes the voltage at REFIN. An edge detection circuit is added to generate a 1µs pulse on GATE to trigger the fault-blanking and forced-PWM operation. When using PWM mode (SKIP = V CC ), the edge detection circuit is only required if fault blanking is enabled. Otherwise, leave OD unconnected. 32 Active Bus Termination (MAX1993 Only) Active bus termination power supplies generate a voltage rail that tracks a set reference. They are required to source and sink current. DDR memory architecture requires active bus termination. In DDR memory architecture, the termination voltage is set at exactly half the memory supply voltage. Configure the MAX1993 to generate the termination voltage using a resistordivider at REFIN. In such an application, the MAX1993 must be kept in PWM mode (SKIP = VCC) in order for it to source and sink current. Figure 12 shows the MAX1993 configured as a DDR termination regulator. Connect GATE and FBLANK to GND when unused. Voltage Positioning In applications where fast-load transients occur, the output voltage changes instantly by ESR COUT x ΔILOAD. Voltage positioning allows the use of fewer output capacitors for such applications, and maximizes the output voltage AC and DC tolerance window in tight tolerance applications. Figure 13 shows the connection of OUT and FB in a voltage-positioned circuit. In nonvoltage-positioned circuits, the MAX1992/MAX1993 regulate at the output capacitor. In voltage-positioned circuits, the MAX1992/ MAX1993 regulate on the inductor side of the currentsense resistor. VOUT is reduced to: VOUT(VPS) = VOUT(NO LOAD) - RSENSEILOAD ______________________________________________________________________________________ Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages VCC VIN SKIP DH CIN L 1000pF REFIN 1000pF RSENSE V VTT = DDQ 2 LX 10kΩ COUT DL MAX1993 GND 10kΩ CSP OD CSN GATE OUT FBLANK FB VDDQ = DDR MEMORY SUPPLY VOLTAGE VTT = TERMINATION SUPPLY VOLTAGE Figure 12. Active Bus Termination PC Board Layout Guidelines Layout Procedure Careful PC board layout is critical to achieve low switching losses and clean, stable operation. The switching power stage requires particular attention (Figure 15). If possible, mount all of the power components on the topside of the board, with their ground terminals flush against one another. Follow these guidelines for good PC board layout: • Keep the high-current paths short, especially at the ground terminals. This practice is essential for stable, jitter-free operation. • Keep the power traces and load connections short. This practice is essential for high efficiency. Using thick copper PC boards (2oz vs. 1oz) can enhance full-load efficiency by 1% or more. Correctly routing PC board traces is a difficult task that must be approached in terms of fractions of centimeters, where a single milliohm of excess trace resistance causes a measurable efficiency penalty. • Minimize current-sensing errors by connecting CSP and CSN directly across the current-sense resistor (RSENSE). • When trade-offs in trace lengths must be made, it is preferable to allow the inductor-charging path to be made longer than the discharge path. For example, it is better to allow some extra distance between the input capacitors and the high-side MOSFET than to allow distance between the inductor and the lowside MOSFET or between the inductor and the output filter capacitor. • Route high-speed switching nodes (BST, LX, DH, and DL) away from sensitive analog areas (REF, FB, CSP, and CSN). 1) Place the power components first, with ground terminals adjacent (N L source, C IN , C OUT , and D L anode). If possible, make all these connections on the top layer with wide, copper-filled areas. 2) Mount the controller IC adjacent to the low-side MOSFET, preferably on the backside opposite NL and NH in order to keep LX, GND, DH, and the DL gate-drive lines short and wide. The DL and DH gate traces must be short and wide (50 mils to 100 mils wide if the MOSFET is 1in from the controller IC) to keep the driver impedance low and for proper adaptive dead-time sensing. 3) Group the gate-drive components (BST diode and capacitor, VDD bypass capacitor) together near the controller IC. 4) Make the DC-DC controller ground connections as shown in Figures 1 and 9. This diagram can be viewed as having two separate ground planes: power ground, where all the high-power components go; and an analog ground plane for sensitive analog components. The analog ground plane and power ground plane must meet only at a single point directly at the IC. 5) Connect the output power planes directly to the output filter capacitor positive and negative terminals with multiple vias. Place the entire DC-to-DC converter circuit as close to the load as is practical. ______________________________________________________________________________________ 33 MAX1992/MAX1993 VDDQ MAX1992/MAX1993 Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages R1 +5V BIAS SUPPLY C2 VDD VCC DBST C1 V+ INPUT (VIN) CIN BST NH DH CBST MAX1992 L1 RSENSE LX NL COUT DL DL VOLTAGE-POSITIONED OUTPUT (VOUT(VPS)) PGND AGND CSP OUT CSN FB VOUT(VPS) = VOUT(NO LOAD) - RSENSEIOUT Figure 13. Voltage-Positioning Output CAPACITIVE SOAR (dV/dt = IOUT/COUT) VOLTAGE POSITIONING THE OUTPUT ESR VOLTAGE STEP (ISTEP x RESR) A B A. CONVENTIONAL CONVERTER B. VOLTAGE-POSITIONED OUTPUT VOUT CAPACITIVE SAG (dV/dt = IOUT/COUT) RECOVERY ILOAD Figure 14. Voltage-Positioning Transient Response 34 ______________________________________________________________________________________ Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages MAX1992/MAX1993 KELVIN SENSE VIAS UNDER THE SENSE RESISTOR (SEE EVALUATION KIT) INDUCTOR VIA TO POWER GROUND VIA TO ANALOG GROUND COUT CONNECT GND AND PGND TO THE CONTROLLER AT ONE POINT ONLY, AS SHOWN COUT CIN OUTPUT INPUT GROUND CONNECT THE EXPOSED PAD TO ANALOG GND MAX1992 Figure 15. PC Board Layout LX DH V+ SKIP 14 13 BST 17 15 DL 18 TOP VIEW 16 Pin Configurations (continued) VDD 19 12 CSN GND 20 11 CSP GATE 21 VCC 22 4 5 6 ILIM REF REFIN PGOOD 7 3 OD 24 LSAT 23 2 FB 8 1 9 TON OVP/UVP 10 OUT MAX1993 FBLANK SHDN Chip Information TRANSISTOR COUNT: 2616 PROCESS: BiCMOS THIN QFN 4mm x 4mm A "+" SIGN WILL REPLACE THE FIRST PIN INDICATOR ON LEAD-FREE PACKAGES. ______________________________________________________________________________________ 35 Package Information (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information, go to www.maxim-ic.com/packages.) 24L QFN THIN.EPS MAX1992/MAX1993 Quick-PWM Step-Down Controllers with Inductor Saturation Protection and Dynamic Output Voltages PACKAGE OUTLINE, 12, 16, 20, 24, 28L THIN QFN, 4x4x0.8mm 21-0139 E 1 2 PACKAGE OUTLINE, 12, 16, 20, 24, 28L THIN QFN, 4x4x0.8mm 21-0139 E 2 2 Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim reserves the right to change the circuitry and specifications without notice at any time. 36 ____________________Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 © 2005 Maxim Integrated Products Printed USA is a registered trademark of Maxim Integrated Products, Inc.
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