19-5197; Rev 0; 4/10
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Features
The MAX19994A dual-channel downconverter is
designed to provide 8.4dB of conversion gain, +25dBm
input IP3, +14dBm 1dB input compression point, and a
noise figure of 9.8dB for 1200MHz to 2000MHz diversity
receiver applications. With an optimized LO frequency
range of 1450MHz to 2050MHz, this mixer supports both
high- and low-side LO injection architectures for the
1200MHz to 1700MHz and 1700MHz to 2000MHz RF
bands, respectively.
S 1200MHz to 2000MHz RF Frequency Range
In addition to offering excellent linearity and noise performance, the device also yields a high level of component
integration. This device includes two double-balanced
passive mixer cores, two LO buffers, a dual-input LO
selectable switch, and a pair of differential IF output
amplifiers. Integrated on-chip baluns allow for singleended RF and LO inputs. The MAX19994A requires a
nominal LO drive of 0dBm and a typical supply current of
330mA at VCC = 5.0V, or 264mA at VCC = 3.3V.
S 68dBc Typical 2LO - 2RF Spurious Rejection at
The MAX19994A is pin compatible with the MAX9985/
MAX9995/MAX19985A/MAX19993/MAX19995/
MAX19995A series of 700MHz to 2500MHz mixers
and pin similar with the MAX19997A/MAX19999 series
of 1850MHz to 4000MHz mixers, making this entire
family of downconverters ideal for applications where a
common PCB layout is used across multiple frequency
bands.
The device is available in a 6mm x 6mm, 36-pin thin QFN
package with an exposed pad. Electrical performance is
guaranteed over the extended temperature range, from
TC = -40NC to +85NC.
Applications
S 1450MHz to 2050MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 8.4dB Typical Conversion Gain
S 9.8dB Typical Noise Figure
S +25dBm Typical Input IP3
S +14dBm Typical Input 1dB Compression Point
PRF = -10dBm
S Dual Channels Ideal for Diversity Receiver
Applications
S 47dB Typical Channel-to-Channel Isolation
S Low -6dBm to +3dBm LO Drive
S Integrated LO Buffer
S Internal RF and LO Baluns for Single-Ended
Inputs
S Built-In SPDT LO Switch with 48dB LO-to-LO
Isolation and 50ns Switching Time
S Pin Compatible with the MAX9985/MAX9995/
MAX19985A/MAX19993/MAX19995/MAX19995A
Series of 700MHz to 2200MHz Mixers
S Pin Similar to the MAX19997A/MAX19999 Series
of 1850MHz to 4000MHz Mixers
S Single 5.0V or 3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/ReducedPerformance Mode
WCDMA/LTE Base Stations
TD-SCDMA Base Stations
Ordering Information
GSM/EDGE Base Stations
cdma2000M Base Stations
Wireless Local Loop
Fixed Broadband Wireless Access
Private Mobile Radios
Military Systems
PART
TEMP RANGE
PIN-PACKAGE
MAX19994AETX+
-40NC to +85NC
36 Thin QFN-EP*
MAX19994AETX+T
-40NC to +85NC
36 Thin QFN-EP*
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
cdma2000 is a registered trademark of Telecommunications
Industry Association.
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
MAX19994A
General Description
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
VCC to GND...........................................................-0.3V to +5.5V
LO1, LO2 to GND..................................................-0.3V to +0.3V
LOSEL to GND..........................................-0.3V to (VCC + 0.3V)
RFMAIN, RFDIV, and LO_ Input Power......................... +15dBm
RFMAIN, RFDIV Current
(RF is DC shorted to GND through a balun)....................50mA
Continuous Power Dissipation (Note 1)...............................8.7W
BJA (Notes 1, 3)............................................................. +38NC/W
BJC (Notes 2, 3)...............................................................7.4NC/W
Operating Case Temperature
Range (Note 4).................................................. -40NC to +85NC
Junction Temperature......................................................+150NC
Storage Temperature Range............................. -65NC to +150NC
Lead Temperature (soldering, 10s).................................+300NC
Soldering Temperature (reflow).......................................+260NC
Note 1: Junction temperature TJ = TA + (BJA x VCC x ICC). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150NC.
Note 2: Based on junction temperature TJ = TC + (BJC x VCC x ICC). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a fourlayer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: TC is the temperature on the exposed pad of the package. TA is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 4.75V to 5.25V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.82kI.
Typical values are at VCC = 5.0V, TC = +25NC, unless otherwise noted. All parameters are production tested.)
PARAMETER
SYMBOL
Supply Voltage
VCC
Supply Current
ICC
LOSEL Input High Voltage
VIH
LOSEL Input Low Voltage
LOSEL Input Current
CONDITIONS
MIN
TYP
MAX
4.75
5
5.25
V
330
420
mA
Total supply current
2
V
VIL
IIH and IIL
UNITS
-10
0.8
V
+10
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, VCC = 3.0V to 3.6V, no input AC signals. TC = -40NC to +85NC, R1 = R4 = 681I, R2 = R5 = 1.43kI.
Typical values are at VCC = 3.3V, TC = +25NC, unless otherwise noted.)
PARAMETER
SYMBOL
Supply Voltage
VCC
Supply Current
ICC
LOSEL Input High Voltage
LOSEL Input Low Voltage
CONDITIONS
MIN
TYP
MAX
3.0
3.3
3.6
Total supply current
UNITS
V
264
mA
VIH
2
V
VIL
0.8
V
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
SYMBOL
RF Frequency
fRF
LO Frequency
fLO
2
CONDITIONS
MIN
TYP
MAX
C1 = C8 = 39pF (Note 5)
1200
1700
C1 = C8 = 1.8pF, L7 = L8 = 4.7nH (Note 5)
1700
2000
(Note 5)
1450
2050
UNITS
MHz
MHz
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
PARAMETER
IF Frequency
LO Drive Level
SYMBOL
fIF
PLO
CONDITIONS
MIN
TYP
MAX
Using Mini-Circuits TC4-1W-17 4:1 transformer as defined in the Typical Application
Circuit, IF matching components affect the
IF frequency range (Note 5)
100
Using alternative Mini-Circuits TC4-1W-7A
4:1 transformer as defined in the Typical
Application Circuit, IF matching components
affect the IF frequency range (Note 5)
50
250
(Note 5)
-6
+3
UNITS
500
MHz
dBm
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V
to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz,
fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm,
PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and
characterization, unless otherwise noted.) (Note 6)
PARAMETER
Conversion Gain
SYMBOL
GC
CONDITIONS
MIN
TYP
MAX
6.2
8.4
9.8
TC = +25NC (Note 7)
7.0
8.4
9.0
TC = +25NC, fRF = 1427MHz to 1463MHz
(Note 7)
7.9
8.4
8.9
UNITS
dB
Conversion Gain Flatness
DGC
fRF = 1427MHz to 1463MHz
Q0.05
dB
Gain Variation Over Temperature
TCCG
TC = -40NC to +85NC
-0.01
dB/NC
Input Compression Point
IP1dB
fRF = 1450MHz (Notes 7, 8)
12.6
14.0
dBm
Input Third-Order Intercept Point
Input Third-Order Intercept Point
Variation Over Temperature
Noise Figure (Note 9)
Noise Figure Temperature
Coefficient
Noise Figure with Blocker
IIP3
TCIIP3
NFSSB
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone
21.5
25.0
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
fRF = 1427MHz to 1463MHz, TC = +25NC
(Note 7)
23.0
25.0
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
fRF = 1427MHz to 1463MHz
22
25.0
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40NC to +85NC
dBm
dBm
Q0.75
Single sideband, no blockers present
9.8
13
fRF = 1427MHz to 1463MHz, TC = +25NC,
PLO = 0dBm, single sideband, no blockers
present
9.8
11
fRF = 1427MHz to 1463MHz, PLO = 0dBm,
single sideband, no blockers present
9.8
12.5
TCNF
Single sideband, no blockers present,
TC = -40NC to +85NC
0.016
NFB
PBLOCKER = +8dBm, fRF = 1450MHz,
fLO = 1800MHz, fBLOCKER = 1350MHz,
PLO = 0dBm, VCC = 5.0V, TC = +25NC
(Notes 9, 10)
20.2
dB
dB/NC
22
dB
3
MAX19994A
RECOMMENDED AC OPERATING CONDITIONS (continued)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.82kI, VCC = 4.75V
to 5.25V, RF and LO ports are driven from 50I sources, PLO = -6dBm to +3dBm, PRF = -5dBm, fRF = 1200MHz to 1700MHz,
fLO = 1550MHz to 2050MHz, fIF = 350MHz, fRF < fLO, TC = -40NC to +85NC. Typical values are at VCC = 5.0V, PRF = -5dBm,
PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC. All parameters are guaranteed by design and
characterization, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
CONDITIONS
fRF = 1450MHz,
fLO = 1800MHz,
fSPUR = 1625MHz
2LO - 2RF Spur Rejection (Note 9)
2x2
fRF = 1450MHz,
fLO = 1800MHz,
fSPUR = 1625MHz,
PLO = 0dBm, VCC = 5.0V,
TC = +25NC
fRF = 1450MHz,
fLO = 1800MHz,
fSPUR = 1683.33MHz
3LO - 3RF Spur Rejection (Note 9)
3x3
fRF = 1450MHz,
fLO = 1800MHz,
fSPUR = 1683.33MHz,
PLO = 0dBm, VCC = 5.0V,
TC = +25NC
MIN
TYP
PRF = -10dBm
57
68
PRF = -5dBm
52
63
PRF = -10dBm
58
68
PRF = -5dBm
53
63
PRF = -10dBm
68
84
PRF = -5dBm
58
74
PRF = -10dBm
70
84
PRF = -5dBm
60
74
MAX
UNITS
dBc
dBc
LO and IF terminated into matched
impedance, LO “on”
17
LO port selected, RF and IF terminated into
matched impedance
16
LO port unselected, RF and IF terminated
into matched impedance
20
Nominal differential impedance of the IF
outputs
200
I
IF Output Return Loss
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
13.0
dB
RF-to-IF Isolation
(Note 7)
30
dB
LO Leakage at RF Port
(Note 7)
-42
dBm
2LO Leakage at RF Port
(Note 7)
-30
dBm
LO Leakage at IF Port
(Note 7)
-35
dBm
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
ZIF
dB
dB
19
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
43
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
43
47
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1800MHz, fLO2 = 1801MHz (Note 7)
42
48
dB
LO Switching Time
50% of LOSEL to IF settled within 2 degrees
50
ns
Channel Isolation (Note 7)
4
47
dB
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). R1 = R4 = 681I, R2 = R5 = 1.43kI. Typical
values are at VCC = 3.3V, PRF = -5dBm, PLO = 0dBm, fRF = 1450MHz, fLO = 1800MHz, fIF = 350MHz, TC = +25NC, unless otherwise
noted.) (Note 6)
PARAMETER
Conversion Gain
SYMBOL
GC
CONDITIONS
(Note 7)
MIN
TYP
MAX
UNITS
8.2
dB
±0.05
dB
Conversion Gain Flatness
DGC
fRF = 1427MHz to 1463MHz
Gain Variation Over Temperature
TCCG
TC = -40NC to +85NC
Input Compression Point
IP1dB
(Note 8)
10.6
dBm
fRF1 - fRF2 = 1MHz
23.6
dBm
-0.01
dB/NC
Input Third-Order Intercept Point
IIP3
Input Third-Order Intercept Point
Variation Over Temperature
TCIIP3
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40NC to +85NC
±0.5
dBm
Noise Figure
NFSSB
Single sideband, no blockers present
9.8
dB
Noise Figure Temperature Coefficient
TCNF
Single sideband, no blockers present,
TC = -40NC to +85NC
0.016
dB/NC
2LO - 2RF Spur Rejection
2x2
3LO - 3RF Spur Rejection
3x3
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
PRF = -10dBm
68
PRF = -5dBm
63
PRF = -10dBm
77
PRF = -5dBm
67
LO and IF terminated into matched
impedance, LO “on”
15
LO port selected, RF and IF terminated into
matched impedance
18
LO port unselected, RF and IF terminated
into matched impedance
21
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
12.5
dBc
dBc
dB
dB
dB
RF-to-IF Isolation
31
dB
LO Leakage at RF Port
-49
dBm
2LO Leakage at RF Port
-40
dBm
-35
dBm
LO Leakage at IF Port
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
48
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
48
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1800MHz, fLO2 = 1801MHz
50
dB
LO Switching Time
50% of LOSEL to IF settled within 2 degrees
50
ns
Channel Isolation
dB
5
MAX19994A
3.3V SUPPLY, HIGH-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
5.0V SUPPLY, LOW-SIDE INJECTION AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit optimized for the Extended RF Band (see Table 1), R1 = R4 = 681I, R2 = R5 = 1.82kI. Typical
values are at VCC = 5.0V, PRF = -5dBm, PLO = 0dBm, fRF = 1850MHz, fLO = 1500MHz, fIF = 350MHz, TC = +25NC, unless otherwise
noted.) (Note 6)
PARAMETER
Conversion Gain
SYMBOL
CONDITIONS
GC
MIN
TYP
MAX
UNITS
7.9
dB
Conversion Gain Flatness
DGC
fRF = 1700MHz to 2000MHz, over any
100MHz band
Q0.06
dB
Gain Variation Over Temperature
TCCG
TC = -40NC to +85NC
-0.007
dB/NC
Input Compression Point
IP1dB
(Note 8)
13.9
dBm
fRF1 - fRF2 = 1MHz
24.9
dBm
Input Third-Order Intercept Point
IIP3
Input Third-Order Intercept Point
Variation Over Temperature
TCIIP3
fRF1 - fRF2 = 1MHz, PRF = -5dBm per tone,
TC = -40NC to +85NC
Q0.6
dBm
Noise Figure
NFSSB
Single sideband, no blockers present
10.2
dB
Noise Figure Temperature Coefficient
TCNF
Single sideband, no blockers present,
TC = -40NC to +85NC
0.017
dB/NC
2RF - 2LO Spur Rejection
2x2
3RF - 3LO Spur Rejection
3x3
RF Input Return Loss
LO Input Return Loss
IF Output Return Loss
PRF = -10dBm
68
PRF = -5dBm
63
PRF = -10dBm
87
PRF = -5dBm
77
LO and IF terminated into matched
impedance, LO “on”
14
LO port selected, RF and IF terminated into
matched impedance
29
LO port unselected, RF and IF terminated
into matched impedance
28
RF terminated into 50I, LO driven by
50I source, IF transformed to 50I using
external components shown in the Typical
Application Circuit
14.5
dBc
dBc
dB
dB
dB
RF-to-IF Isolation
37
dB
LO Leakage at RF Port
-52
dBm
-29
dBm
-19.4
dBm
2LO Leakage at RF Port
LO Leakage at IF Port
RFMAIN converted power measured at
IFDIV relative to IFMAIN, all unused ports
terminated to 50I
43
RFDIV converted power measured at
IFMAIN relative to IFDIV, all unused ports
terminated to 50I
43
LO-to-LO Isolation
PLO1 = +3dBm, PLO2 = +3dBm,
fLO1 = 1500MHz, fLO2 = 1501MHz
54
dB
LO Switching Time
50% of LOSEL to IF settled within 2 degrees
50
ns
Channel Isolation
dB
Note 5: Not production tested. Operation outside this range is possible, but with degraded performance of some parameters.
See the Typical Operating Characteristics.
6
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
TC = +85°C
7
TC = +25°C
6
8
PLO = -6dBm, -3dBm, 0dBm, +3dBm
7
6
1400
1500
1600
1700
1300
RF FREQUENCY (MHz)
25
24
1500
1600
1700
26
PLO = +3dBm
PLO = 0dBm
25
PLO = -6dBm
24
RF FREQUENCY (MHz)
1600
1500
1600
1700
27
PRF = -5dBm/TONE
VCC = 5.25V
26
25
VCC = 5.0V
VCC = 4.75V
24
23
22
22
1500
1400
PLO = -3dBm
22
1400
1300
INPUT IP3 vs. RF FREQUENCY
23
1300
1200
RF FREQUENCY (MHz)
PRF = -5dBm/TONE
TC = -40°C
23
1200
VCC = 4.75V, 5.0V, 5.25V
7
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 (dBm)
INPUT IP3 (dBm)
26
TC = +25°C
1400
27
MAX19994A toc04
PRF = -5dBm/TONE
TC = +85°C
8
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
27
9
6
1200
INPUT IP3 (dBm)
1300
MAX19994A toc05
1200
MAX19994A toc03
9
CONVERSION GAIN (dB)
8
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc02
9
CONVERSION GAIN (dB)
MAX19994A toc01
TC = -40°C
CONVERSION GAIN (dB)
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc06
CONVERSION GAIN vs. RF FREQUENCY
10
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
7
MAX19994A
Note 6: All limits reflect losses of external components, including a 0.8dB loss at fIF = 350MHz due to the 4:1 transformer. Output
measurements were taken at IF outputs of the Typical Application Circuit.
Note 7: 100% production tested for functionality.
Note 8: Maximum reliable continuous input power applied to the RF or IF port of this device is +12dBm from a 50I source.
Note 9: Not production tested.
Note 10: Measured with external LO source noise filtered so the noise floor is -174dBm/Hz. This specification reflects the effects
of all SNR degradations in the mixer, including the LO noise, as defined in Application Note 2021: Specifications and
Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
NOISE FIGURE vs. RF FREQUENCY
TC = +25°C
11
NOISE FIGURE (dB)
9
8
11
NOISE FIGURE (dB)
NOISE FIGURE (dB)
10
12
MAX19994A toc08
MAX19994A toc07
TC = +85°C
11
NOISE FIGURE vs. RF FREQUENCY
12
10
9
PLO = -6dBm, -3dBm, 0dBm, +3dBm
8
MAX19994A toc09
NOISE FIGURE vs. RF FREQUENCY
12
10
9
VCC = 4.75V, 5.0V, 5.25V
8
TC = -40°C
7
6
7
6
1400
1500
1600
1700
6
1200
1300
RF FREQUENCY (MHz)
1600
1700
1200
1300
TC = +85°C
60
TC = -40°C
2LO - 2RF RESPONSE vs. RF FREQUENCY
PRF = -5dBm
70
PLO = 0dBm
PLO = +3dBm
60
PLO = -3dBm
TC = +25°C
1400
1500
1600
1700
RF FREQUENCY (MHz)
80
2LO - 2RF RESPONSE (dBc)
PRF = -5dBm
MAX19994A toc10
2LO - 2RF RESPONSE vs. RF FREQUENCY
2LO - 2RF RESPONSE (dBc)
1500
RF FREQUENCY (MHz)
80
70
1400
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
PRF = -5dBm
2LO - 2RF RESPONSE (dBc)
1300
MAX19994A toc11
1200
MAX19994A toc12
7
70
60
VCC = 4.75V, 5.0V, 5.25V
PLO = -6dBm
50
1400
1500
1600
1700
50
1200
1300
RF FREQUENCY (MHz)
1600
1700
1200
1300
TC = +85°C
75
65
PRF = -5dBm
85
PLO = -6dBm
75
65
1400
1500
1600
1700
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
3LO - 3RF RESPONSE (dBc)
TC = +25°C
MAX19994A toc13
PRF = -5dBm
85
1500
RF FREQUENCY (MHz)
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
1400
PLO = -3dBm, 0dBm, +3dBm
3LO - 3RF RESPONSE vs. RF FREQUENCY
95
3LO - 3RF RESPONSE (dBc)
1300
MAX19994A toc14
1200
PRF = -5dBm
85
MAX19994A toc15
50
3LO - 3RF RESPONSE (dBc)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
VCC = 4.75V
75
VCC = 5.25V
65
VCC = 5.0V
TC = -40°C
55
55
1200
1300
1400
1500
RF FREQUENCY (MHz)
8
1600
1700
55
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
TC = -40°C
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1400
1500
1600
1700
1200
1300
RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
1600
1200
1700
50
45
TC = -40°C, +25°C, +85°C
MAX19994A toc20
55
50
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
40
55
1600
1700
1300
1400
1500
1600
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-25
TC = +85°C
-30
-35
TC = +25°C
-40
TC = -40°C
-45
-50
-20
LO LEAKAGE AT IF PORT (dBm)
MAX19994A toc22
-20
1650
1750
1850
1950
LO FREQUENCY (MHz)
2050
50
45
VCC = 4.75V, 5.0V, 5.25V
40
PLO = +3dBm
-25
PLO = 0dBm
1300
1400
1500
1600
RF FREQUENCY (MHz)
1700
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-30
-35
PLO = -3dBm
-40
PLO = -6dBm
-45
1200
1700
-50
1550
1700
30
1200
-20
LO LEAKAGE AT IF PORT (dBm)
1500
1600
CHANNEL ISOLATION vs. RF FREQUENCY
30
1400
1500
35
MAX19994A toc23
30
1400
60
35
1300
1300
RF FREQUENCY (MHz)
CHANNEL ISOLATION vs. RF FREQUENCY
35
LO LEAKAGE AT IF PORT (dBm)
1500
60
CHANNEL ISOLATION (dB)
MAX19994A toc19
CHANNEL ISOLATION (dB)
55
1200
VCC = 4.75V
RF FREQUENCY (MHz)
60
40
1400
CHANNEL ISOLATION (dB)
1300
13
11
11
1200
14
12
12
11
VCC = 5.0V
MAX19994A toc21
12
14
13
VCC = 5.25V
15
MAX19994A toc24
TC = +25°C
13
15
INPUT P1dB (dBm)
14
16
MAX19994A toc17
MAX19994A toc16
TC = +85°C
INPUT P1dB (dBm)
INPUT P1dB (dBm)
15
INPUT P1dB vs. RF FREQUENCY
INPUT P1dB vs. RF FREQUENCY
16
MAX19994A toc18
INPUT P1dB vs. RF FREQUENCY
16
VCC = 5.25V
-25
-30
-35
VCC = 4.75V
-40
VCC = 5.0V
-45
-50
1550
1650
1750
1850
1950
LO FREQUENCY (MHz)
2050
1550
1650
1750
1850
1950
LO FREQUENCY (MHz)
2050
9
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
40
TC = +25°C
30
PLO = 0dBm
40
PLO = -3dBm
30
20
1300
1400
1500
1600
1700
20
1200
1300
1400
1500
1600
1700
1200
1300
1400
1500
1600
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = +85°C
-60
-70
PLO = 0dBm
-40
-50
PLO = -3dBm
PLO = -6dBm
-60
-70
1600
1800
2000
2200
-30
-40
-50
VCC = 4.75V, 5.0V, 5.25V
-60
-70
1400
1600
1800
2000
2200
1400
1600
1800
2000
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-30
-40
TC = +85°C
PLO = +3dBm
PLO = -3dBm
PLO = 0dBm
-30
-40
PLO = -6dBm
-50
-60
-60
1600
1800
2000
LO FREQUENCY (MHz)
2200
-20
2200
MAX19994A toc33
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
TC = +25°C
2LO LEAKAGE AT RF PORT (dBm)
TC = -40°C
-20
-10
MAX19994A toc32
LO FREQUENCY (MHz)
MAX19994A toc31
LO FREQUENCY (MHz)
-10
1700
MAX19994A toc30
PLO = +3dBm
MAX19994A toc29
-30
-20
LO LEAKAGE AT RF PORT (dBm)
-50
-20
LO LEAKAGE AT RF PORT (dBm)
MAX19994A toc28
-40
1400
30
RF FREQUENCY (MHz)
TC = +25°C
-50
VCC = 4.75V
RF FREQUENCY (MHz)
TC = -40°C
1400
VCC = 5.0V
40
RF FREQUENCY (MHz)
-20
-30
MAX19994A toc27
VCC = 5.25V
20
1200
LO LEAKAGE AT RF PORT (dBm)
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
PLO = -6dBm
TC = -40°C
10
MAX19994A toc26
PLO = +3dBm
RF-TO-IF ISOLATION (dB)
MAX19994A toc25
RF-TO-IF ISOLATION (dB)
TC = +85°C
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
RF-TO-IF ISOLATION (dB)
RF-TO-IF ISOLATION vs. RF FREQUENCY
50
2LO LEAKAGE AT RF PORT (dBm)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
VCC = 5.25V
-30
VCC = 5.0V
-40
VCC = 4.75V
-50
-60
1400
1600
1800
2000
LO FREQUENCY (MHz)
2200
1400
1600
1800
2000
LO FREQUENCY (MHz)
2200
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
LO SWITCH ISOLATION
vs. LO FREQUENCY
55
TC = +25°C
45
TC = +85°C
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1800
2000
2200
1600
1800
2000
2200
10
PLO = -6dBm, -3dBm, 0dBm, +3dBm
15
20
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
LO = 1550MHz
10
15
20
LO = 1800MHz
25
25
LO = 2050MHz
0
10
PLO = +3dBm
PLO = 0dBm
1400
1500
1600
1700
140
230
320
410
PLO = -6dBm
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
20
PLO = -6dBm, -3dBm, 0dBm, +3dBm
1800
2000
LO FREQUENCY (MHz)
1800
2000
2200
LO FREQUENCY (MHz)
350
VCC = 5.25V
340
330
320
310
40
1600
1600
SUPPLY CURRENT vs.TEMPERATURE (TC)
SUPPLY CURRENT (mA)
10
1400
1400
360
MAX19994A toc40
0
30
40
500
IF FREQUENCY (MHz)
RF FREQUENCY (MHz)
PLO = -3dBm
30
2200
MAX19994A toc41
1300
LO UNSELECTED PORT RETURN LOSS (dB)
1200
50
2200
20
30
30
2000
IF PORT RETURN LOSS vs. IF FREQUENCY
5
IF PORT RETURN LOSS (dB)
5
1800
LO FREQUENCY (MHz)
VCC = 4.75V, 5.0V, 5.25V
MAX19994A toc37
IF = 350MHz
1600
1400
LO FREQUENCY (MHz)
0
0
MAX19994A toc36
35
1400
RF PORT RETURN LOSS
vs. RF FREQUENCY
VCC = 4.75V, 5.0V, 5.25V
45
LO SELECTED PORT RETURN LOSS (dB)
1600
LO FREQUENCY (MHz)
RF PORT RETURN LOSS (dB)
55
35
1400
MAX19994A toc38
35
55
65
MAX19994A toc39
LO SWITCH ISOLATION (dB)
TC = -40°C
MAX19994A toc35
65
MAX19994A toc34
LO SWITCH ISOLATION (dB)
65
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION (dB)
LO SWITCH ISOLATION
vs. LO FREQUENCY
VCC = 5.0V
VCC = 4.75V
300
-40
-15
10
35
60
85
TEMPERATURE (°C)
11
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 5.0V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
8
TC = +25°C
TC = +85°C
6
8
PLO = -6dBm, -3dBm, 0dBm, +3dBm
7
6
1400
1500
1600
1700
1300
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc45
VCC = 3.3V
PRF = -5dBm/TONE
23
TC = +25°C
22
25
TC = -40°C
1500
1600
1700
1200
PLO = +3dBm
PLO = 0dBm
24
23
PLO = -3dBm
22
1500
1600
1700
VCC = 3.6V
1300
1400
1500
1600
VCC = 3.0V V = 3.3V
CC
22
21
1700
1200
1300
9
11
10
9
8
1600
1700
NOISE FIGURE vs. RF FREQUENCY
VCC = 3.3V
PLO = -6dBm, -3dBm, 0dBm, +3dBm
TC = +25°C
1500
13
12
NOISE FIGURE (dB)
10
1400
RF FREQUENCY (MHz)
12
NOISE FIGURE (dB)
11
PRF = -5dBm/TONE
23
NOISE FIGURE vs. RF FREQUENCY
13
MAX19994A toc48
TC = +85°C
1700
24
RF FREQUENCY (MHz)
VCC = 3.3V
1600
20
1200
NOISE FIGURE vs. RF FREQUENCY
12
1500
25
PLO = -6dBm
RF FREQUENCY (MHz)
13
1400
INPUT IP3 vs. RF FREQUENCY
MAX19994A toc49
1400
1300
26
20
1300
VCC = 3.0V
RF FREQUENCY (MHz)
VCC = 3.3V
PRF = -5dBm/TONE
21
20
1200
7
INPUT IP3 vs. RF FREQUENCY
24
21
1400
26
INPUT IP3 (dBm)
INPUT IP3 (dBm)
25
VCC = 3.3V
RF FREQUENCY (MHz)
26
TC = +85°C
8
6
1200
INPUT IP3 (dBm)
1300
MAX19994A toc46
1200
VCC = 3.6V
9
8
MAX19994A toc50
7
9
MAX19994A toc44
VCC = 3.3V
CONVERSION GAIN (dB)
9
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc43
MAX19994A toc42
VCC = 3.3V
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
TC = -40°C
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc47
CONVERSION GAIN vs. RF FREQUENCY
10
NOISE FIGURE (dB)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
11
10
9
VCC = 3.0V, 3.3V, 3.6V
8
TC = -40°C
7
7
1200
1300
1400
1500
RF FREQUENCY (MHz)
12
1600
1700
7
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
TC = -40°C
PLO = 0dBm
60
TC = +25°C
PLO = -6dBm
1400
1500
1600
1300
1400
1500
65
TC = +25°C
TC = -40°C
85
3LO - 3RF RESPONSE (dBc)
TC = +85°C
MAX19994A toc54
1600
1700
1200
45
1400
1500
1600
VCC = 3.3V
PRF = -5dBm
75
65
PLO = -6dBm, -3dBm, 0dBm, +3dBm
55
1700
INPUT P1dB vs. RF FREQUENCY
1300
TC = -40°C
9
1500
1600
1400
1500
RF FREQUENCY (MHz)
1600
1700
MAX19994A toc53
VCC = 3.3V
VCC = 3.0V
55
1200
1300
VCC = 3.3V
11
10
1400
1500
1600
1700
INPUT P1dB vs. RF FREQUENCY
PLO = -6dBm, -3dBm, 0dBm, +3dBm
13
VCC = 3.6V
12
11
10
VCC = 3.3V
9
8
1300
65
1700
9
8
1200
75
RF FREQUENCY (MHz)
12
INPUT P1dB (dBm)
TC = +25°C
1700
PRF = -5dBm
INPUT P1dB vs. RF FREQUENCY
11
10
1400
13
MAX19994A toc57
TC = +85°C
12
1600
VCC = 3.6V
RF FREQUENCY (MHz)
VCC = 3.3V
1500
45
1200
RF FREQUENCY (MHz)
13
1400
3LO - 3RF RESPONSE vs. RF FREQUENCY
INPUT P1dB (dBm)
1300
1300
85
45
1200
VCC = 3.0V
RF FREQUENCY (MHz)
MAX19994A toc58
3LO - 3RF RESPONSE (dBc)
VCC = 3.3V
PRF = -5dBm
55
VCC = 3.3V
3LO - 3RF RESPONSE vs. RF FREQUENCY
3LO - 3RF RESPONSE vs. RF FREQUENCY
75
60
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
85
VCC = 3.6V
50
1200
1700
3LO - 3RF RESPONSE (dBc)
1300
MAX19994A toc55
1200
70
PLO = -3dBm
50
50
INPUT P1dB (dBm)
MAX19994A toc52
PLO = +3dBm
MAX19994A toc56
60
70
PRF = -5dBm
MAX19994A toc59
TC = +85°C
VCC = 3.3V
PRF = -5dBm
80
2LO - 2RF RESPONSE (dBc)
70
2LO - 2RF RESPONSE vs. RF FREQUENCY
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
2LO - 2RF RESPONSE (dBc)
2LO - 2RF RESPONSE (dBc)
VCC = 3.3V
PRF = -5dBm
MAX19994A toc51
2LO - 2RF RESPONSE vs. RF FREQUENCY
80
VCC = 3.0V
8
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
1600
1700
RF FREQUENCY (MHz)
13
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
CHANNEL ISOLATION
vs. RF FREQUENCY
TC = -40°C, +25°C, +85°C
35
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
40
1400
1500
1600
1200
RF FREQUENCY (MHz)
-25
-30
TC = +85°C
-35
TC = +25°C
TC = -40°C
-45
1400
1500
1600
1650
1750
1850
1950
1600
-30
PLO = 0dBm
-35
-40
PLO = -6dBm
PLO = -3dBm
-20
-25
-35
-40
VCC = 3.0V
VCC = 3.3V
-45
-50
1550
1650
1750
1850
1950
2050
1550
1650
1750
1850
1950
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
TC = +25°C
30
VCC = 3.3V
PLO = +3dBm
40
30
PLO = 0dBm
PLO = -3dBm
PLO = -6dBm
TC = -40°C
20
20
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
50
VCC = 3.3V
RF-TO-IF ISOLATION (dB)
40
50
RF-TO-IF ISOLATION (dB)
TC = +85°C
MAX19994A toc66
LO FREQUENCY (MHz)
VCC = 3.3V
1700
VCC = 3.6V
-30
LO FREQUENCY (MHz)
50
1200
1500
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
PLO = +3dBm
2050
1400
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-50
1550
1300
RF FREQUENCY (MHz)
-25
-45
1200
1700
RF FREQUENCY (MHz)
VCC = 3.3V
-50
VCC = 3.0V, 3.3V, 3.6V
40
2050
MAX19994A toc68
-40
1300
-20
LO LEAKAGE AT IF PORT (dBm)
LO LEAKAGE AT IF PORT (dBm)
VCC = 3.3V
MAX19994A toc63
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
45
30
30
1700
LO LEAKAGE AT IF PORT (dBm)
1300
MAX19994A toc64
1200
50
35
35
30
14
55
MAX19994A toc65
45
50
MAX19994A toc62
55
60
CHANNEL ISOLATION (dB)
50
40
VCC = 3.3V
MAX19994A toc67
CHANNEL ISOLATION (dB)
55
60
CHANNEL ISOLATION (dB)
VCC = 3.3V
CHANNEL ISOLATION
vs. RF FREQUENCY
MAX19994A toc61
60
MAX19994A toc60
CHANNEL ISOLATION vs. RF FREQUENCY
RF-TO-IF ISOLATION (dB)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
VCC = 3.0V
40
VCC = 3.6V
30
20
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
1200
1300
1400
1500
RF FREQUENCY (MHz)
1600
1700
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
TC = +25°C
-50
TC = +85°C
-60
-70
1600
1800
2000
PLO = 0dBm
-50
PLO = -3dBm
PLO = -6dBm
-60
2200
MAX19994A toc71
VCC = 3.6V
-40
VCC = 3.3V
-50
VCC = 3.0V
-60
-70
1400
1600
1800
2000
2200
1400
1600
1800
2000
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-30
TC = +25°C
-40
TC = +85°C
-50
-60
PLO = +3dBm
PLO = 0dBm
-30
-40
PLO = -6dBm PLO = -3dBm
-50
-60
1600
1800
2000
2200
-20
VCC = 3.3V
VCC = 3.6V
-30
-40
-50
VCC = 3.0V
-60
1400
1600
1800
2000
2200
1400
1600
1800
2000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
LO SWITCH ISOLATION
vs. LO FREQUENCY
TC = +25°C
55
45
55
45
PLO = -6dBm, -3dBm, 0dBm, +3dBm
65
2200
MAX19994A toc77
VCC = 3.3V
LO SWITCH ISOLATION (dB)
TC = -40°C
65
LO SWITCH ISOLATION (dB)
VCC = 3.3V
MAX19994A toc75
LO FREQUENCY (MHz)
65
2200
MAX19994A toc74
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
TC = -40°C
VCC = 3.3V
2LO LEAKAGE AT RF PORT (dBm)
-20
-10
MAX19994A toc73
LO FREQUENCY (MHz)
MAX19994A toc72
LO FREQUENCY (MHz)
VCC = 3.3V
1400
-30
LO FREQUENCY (MHz)
-10
2LO LEAKAGE AT RF PORT (dBm)
PLO = +3dBm
-40
-70
1400
LO SWITCH ISOLATION (dB)
-30
-20
LO LEAKAGE AT RF PORT (dBm)
TC = -40°C
-40
VCC = 3.3V
MAX19994A toc70
-30
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19994A toc76
LO LEAKAGE AT RF PORT (dBm)
VCC = 3.3V
LO LEAKAGE AT RF PORT (dBm)
-20
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19994A toc69
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
55
45
VCC = 3.0V, 3.3V, 3.6V
TC = +85°C
35
35
1400
1600
1800
2000
LO FREQUENCY (MHz)
2200
35
1400
1600
1800
2000
LO FREQUENCY (MHz)
2200
1400
1600
1800
2000
2200
LO FREQUENCY (MHz)
15
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Standard RF Band (see Table 1). VCC = 3.3V, fRF = 1200MHz to 1700MHz, LO is
high-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
10
15
PLO = -6dBm, -3dBm, 0dBm, +3dBm
LO = 2050MHz
10
15
20
LO = 1550MHz
25
25
30
30
1200
1300
1400
1500
1600
LO = 1800MHz
1700
140
50
RF FREQUENCY (MHz)
230
320
410
PLO = +3dBm
20
PLO = 0dBm
30
PLO = -3dBm
PLO = -6dBm
40
500
1400
1600
VCC = 3.3V
300
VCC = 3.6V
SUPPLY CURRENT (mA)
10
1800
20
30
280
260
VCC = 3.3V
240
PLO = -6dBm, -3dBm, 0dBm, +3dBm
VCC = 3.0V
220
40
1400
1600
1800
2000
LO FREQUENCY (MHz)
2200
2000
LO FREQUENCY (MHz)
SUPPLY CURRENT
vs. TEMPERATURE (TC)
MAX19994A toc81
0
LO UNSELECTED PORT RETURN LOSS (dB)
10
IF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
16
VCC = 3.3V
-40
-15
MAX19994A toc80
5
0
MAX19994A toc82
20
VCC = 3.3V
LO SELECTED PORT RETURN LOSS (dB)
5
0
MAX19994A toc79
VCC = 3.3V
IF = 350MHz
IF PORT RETURN LOSS (dB)
0
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19994A toc78
RF PORT RETURN LOSS
vs. RF FREQUENCY
RF PORT RETURN LOSS (dB)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
10
35
TEMPERATURE (°C)
60
85
2200
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
7
9
8
PLO = -3dBm, 0dBm, +3dBm
7
VCC = 4.75V, 5.0V, 5.25V
7
6
6
2000
1700
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
1700
2000
MAX19994A toc86
PRF = -5dBm/TONE
INPUT IP3 (dBm)
24
TC = -40°C
1900
2000
INPUT IP3 vs. RF FREQUENCY
28
26
1800
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
PRF = -5dBm/TONE
26
1900
RF FREQUENCY (MHz)
28
TC = +85°C
1800
28
PRF = -5dBm/TONE
26
INPUT IP3 (dBm)
1900
MAX19994A toc87
1800
22
8
24
PLO = -3dBm, 0dBm, +3dBm
22
MAX19994A toc88
6
1700
9
TC = +25°C
TC = +85°C
INPUT IP3 (dBm)
CONVERSION GAIN (dB)
8
10
MAX19994A toc84
MAX19994A toc83
CONVERSION GAIN (dB)
CONVERSION GAIN (dB)
TC = -40°C
9
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
10
MAX19994A toc85
CONVERSION GAIN vs. RF FREQUENCY
10
VCC = 5.25V
24
VCC = 5.0V
VCC = 4.75V
22
TC = +25°C
20
20
1900
2000
20
1700
RF FREQUENCY (MHz)
10
TC = +25°C
TC = -40°C
8
10
PLO = -3dBm, 0dBm, +3dBm
1900
RF FREQUENCY (MHz)
2000
2000
13
12
11
10
VCC = 4.75V, 5.0V, 5.25V
9
8
7
1800
1900
NOISE FIGURE vs. RF FREQUENCY
11
9
1800
RF FREQUENCY (MHz)
8
7
1700
1700
MAX19994A toc90
12
NOISE FIGURE (dB)
NOISE FIGURE (dB)
11
9
2000
NOISE FIGURE vs. RF FREQUENCY
13
MAX19994A toc89
TC = +85°C
12
1900
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
13
1800
MAX19994A toc91
1800
NOISE FIGURE (dB)
1700
7
1700
1800
1900
RF FREQUENCY (MHz)
2000
1700
1800
1900
2000
RF FREQUENCY (MHz)
17
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
60
TC = +25°C
TC = -40°C
50
PLO = 0dBm
60
PLO = -3dBm
50
2000
1900
RF FREQUENCY (MHz)
1800
75
TC = -40°C
65
1700
3RF - 3LO RESPONSE vs. RF FREQUENCY
PRF = -5dBm
85
75
PLO = -3dBm, 0dBm, +3dBm
65
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
55
PRF = -5dBm
85
75
VCC = 5.25V
VCC = 5.0V
65
2000
1700
2000
15
INPUT P1dB (dBm)
14
TC = +25°C
13
TC = -40°C
PLO = -3dBm, 0dBm, +3dBm
1900
RF FREQUENCY (MHz)
2000
16
VCC = 5.25V
15
VCC = 5.0V
14
13
VCC = 4.75V
12
11
11
2000
INPUT P1dB vs. RF FREQUENCY
14
13
1900
RF FREQUENCY (MHz)
12
12
1800
1800
1700
MAX19994A toc99
16
MAX19994A toc98
TC = +85°C
15
1900
INPUT P1dB vs. RF FREQUENCY
INPUT P1dB vs. RF FREQUENCY
16
1800
RF FREQUENCY (MHz)
MAX19994A toc100
1900
INPUT P1dB (dBm)
1800
55
RF FREQUENCY (MHz)
18
2000
1900
VCC = 4.75V
55
1700
1800
RF FREQUENCY (MHz)
TC = +25°C
1700
MAX19994A toc94
VCC = 4.75V, 5.0V, 5.25V
2000
1900
95
3RF - 3LO RESPONSE (dBc)
85
MAX19994A toc95
PRF = -5dBm
TC = +85°C
60
RF FREQUENCY (MHz)
3RF - 3LO RESPONSE vs. RF FREQUENCY
95
70
50
1700
3RF - 3LO RESPONSE (dBc)
1800
MAX19994A toc96
1700
3RF - 3LO RESPONSE (dBc)
MAX19994A toc93
PLO = +3dBm
PRF = -5dBm
MAX19994A toc97
TC = +85°C
70
PRF = -5dBm
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
2RF - 2LO RESPONSE (dBc)
70
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
2RF - 2LO RESPONSE (dBc)
2RF - 2LO RESPONSE (dBc)
PRF = -5dBm
MAX19994A toc92
2RF - 2LO RESPONSE vs. RF FREQUENCY
80
INPUT P1dB (dBm)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
11
1700
1800
1900
RF FREQUENCY (MHz)
2000
1700
1800
1900
RF FREQUENCY (MHz)
2000
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
45
TC = -40°C, +25°C, +85°C
40
35
1800
1900
PLO = -3dBm, 0dBm, +3dBm
40
2000
1800
1900
2000
1700
1800
2000
1900
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-30
TC = +25°C
-35
-20
PLO = -3dBm
-25
-30
PLO = +3dBm
-35
-40
1550
1650
VCC = 5.25V
-15
-20
-25
VCC = 5.0V
-30
-35
-40
1450
MAX19994A toc106
MAX19994A toc105
PLO = 0dBm
-15
-10
LO LEAKAGE AT IF PORT (dBm)
TC = +85°C
-10
LO LEAKAGE AT IF PORT (dBm)
MAX19994A toc104
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-20
VCC = 4.75V
-40
1350
1450
1550
1650
1350
1450
1550
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
TC = -40°C, +25°C, +85°C
30
20
PLO = -3dBm, 0dBm, +3dBm
30
20
1800
1900
RF FREQUENCY (MHz)
2000
1650
MAX19994A toc109
MAX19994A toc108
40
50
RF-TO-IF ISOLATION (dB)
40
50
RF-TO-IF ISOLATION (dB)
MAX19994A toc107
50
1700
MAX19994A toc103
35
1700
RF FREQUENCY (MHz)
-15
1350
VCC = 4.75V, 5.0V, 5.25V
40
RF FREQUENCY (MHz)
TC = -40°C
-25
45
RF FREQUENCY (MHz)
-10
LO LEAKAGE AT IF PORT (dBm)
45
50
35
1700
RF-TO-IF ISOLATION (dB)
CHANNEL ISOLATION
vs. RF FREQUENCY
MAX19994A toc102
50
CHANNEL ISOLATION (dB)
MAX19994A toc101
CHANNEL ISOLATION (dB)
50
CHANNEL ISOLATION
vs. RF FREQUENCY
CHANNEL ISOLATION (dB)
CHANNEL ISOLATION
vs. RF FREQUENCY
40
VCC = 4.75V, 5.0V, 5.25V
30
20
1700
1800
1900
RF FREQUENCY (MHz)
2000
1700
1800
1900
2000
RF FREQUENCY (MHz)
19
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = +25°C
-50
TC = +85°C
-60
1450
1600
1750
1900
-50
PLO = -3dBm
PLO = 0dBm
-60
MAX19994A toc112
VCC = 4.75V, 5.0V, 5.25V
-60
1450
1600
1750
1900
1300
2050
1450
1600
1750
1900
LO FREQUENCY (MHz)
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
TC = +25°C
TC = +85°C
-50
-60
PLO = +3dBm
PLO = 0dBm
-30
-40
PLO = -3dBm
-50
1900
2050
1300
LO FREQUENCY (MHz)
55
45
1600
1750
1900
TC = +85°C
35
LO SWITCH ISOLATION vs. LO FREQUENCY
55
PLO = -3dBm, 0dBm, +3dBm
45
1650
1825
LO FREQUENCY (MHz)
2000
1450
1600
1750
1900
2050
LO FREQUENCY (MHz)
35
1475
1300
2050
MAX19994A toc117
TC = +25°C
1450
65
LO SWITCH ISOLATION (dB)
MAX19994A toc116
TC = -40°C
VCC = 4.75V
-50
LO FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
65
VCC = 5.0V
-40
LO SWITCH ISOLATION vs. LO FREQUENCY
65
MAX19994A toc118
1750
LO SWITCH ISOLATION (dB)
1600
-30
-60
-60
1450
VCC = 5.25V
-20
2050
MAX19994A toc115
-20
-10
2LO LEAKAGE AT RF PORT (dBm)
-30
-10
MAX19994A toc114
MAX19994A toc113
TC = -40°C
1300
-50
LO FREQUENCY (MHz)
-20
1300
-40
LO FREQUENCY (MHz)
-10
-40
-30
-70
1300
2050
2LO LEAKAGE AT RF PORT (dBm)
1300
20
MAX19994A toc111
-40
-20
-70
-70
2LO LEAKAGE AT RF PORT (dBm)
PLO = +3dBm
-30
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT (dBm)
-40
-20
LO LEAKAGE AT RF PORT (dBm)
TC = -40°C
-30
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
MAX19994A toc110
LO LEAKAGE AT RF PORT (dBm)
-20
LO SWITCH ISOLATION (dB)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
55
VCC = 4.75V, 5.0V, 5.25V
45
35
1300
1475
1650
1825
LO FREQUENCY (MHz)
2000
1300
1475
1650
1825
LO FREQUENCY (MHz)
2000
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
PLO = -3dBm, 0dBm, +3dBm
25
10
15
20
VCC = 4.75V, 5.0V, 5.25V
25
30
30
1800
1900
2000
140
RF FREQUENCY (MHz)
230
320
410
20
30
PLO = -3dBm
500
1400
1600
10
20
PLO = -3dBm, 0dBm, +3dBm
30
360
VCC = 5.25V
350
VCC = 5.0V
40
2000
LO FREQUENCY (MHz)
2000
2200
340
330
320
310
1800
1800
LO FREQUENCY (MHz)
SUPPLY CURRENT
vs. TEMPERATURE (TC)
SUPPLY CURRENT (mA)
0
1600
MAX19994A toc121
PLO = 0dBm
IF FREQUENCY (MHz)
LO UNSELECTED PORT RETURN LOSS
vs. LO FREQUENCY
1400
PLO = +3dBm
40
50
MAX19994A toc122
1700
10
2200
MAX19994A toc123
15
5
0
LO SELECTED PORT RETURN LOSS (dB)
10
0
MAX19994A toc120
5
LO UNSELECTED PORT RETURN LOSS (dB)
RF PORT RETURN LOSS (dB)
IF = 350MHz
IF PORT RETURN LOSS (dB)
0
20
LO SELECTED PORT RETURN LOSS
vs. LO FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
MAX19994A toc119
RF PORT RETURN LOSS
vs. RF FREQUENCY
VCC = 4.75V
300
-40
-15
10
35
60
85
TEMPERATURE (°C)
21
MAX19994A
Typical Operating Characteristics (continued)
(Typical Application Circuit optimized for the Extended RF Band (see Table 1). VCC = 5.0V, fRF = 1700MHz to 2000MHz, LO is
low-side injected for a 350MHz IF, PRF = -5dBm, PLO = 0dBm, TC = +25°C, unless otherwise noted.)
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
LO2
GND
GND
GND
LOSEL
GND
VCC
GND
LO1
TOP VIEW
27
26
25
24
23
22
21
20
19
N.C.
28
18
N.C.
LO_ADJ_M
29
17
LO_ADJ_D
VCC
30
16
VCC
15
IND_EXTD
EXPOSED PAD
MAX19994A
13
IFD+
GND
34
12
GND
IFM_SET
35
11
IFD_SET
VCC
36
10
VCC
+
1
2
3
4
5
6
7
8
9
RFDIV
33
TAPDIV
IFM+
GND
IFD-
VCC
14
GND
32
VCC
IFM-
GND
31
TAPMAIN
IND_EXTM
RFMAIN
MAX19994A
Pin Configuration/Functional Block Diagram
TQFN
(6mm × 6mm)
EXPOSED PAD ON THE BOTTOM OF THE PACKAGE
Pin Description
PIN
NAME
1
RFMAIN
2
TAPMAIN
3, 5, 7,
12, 20,
22, 24,
25, 26, 34
GND
Ground
4, 6, 10,
16, 21,
30, 36
VCC
Power Supply. Bypass to GND with capacitors as close as possible to the pin, as shown in the
Typical Application Circuit.
8
TAPDIV
22
FUNCTION
Main Channel RF input. Internally matched to 50I. Requires an input DC-blocking capacitor.
Main Channel Balun Center Tap. Bypass to GND with 39pF and 0.033FF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Diversity Channel Balun Center Tap. Bypass to GND with 39pF and 0.033µF capacitors as close as
possible to the pin with the smaller value capacitor closer to the part.
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
PIN
NAME
9
RFDIV
FUNCTION
11
IFD_SET
IF Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity IF amplifier (see the Typical Application Circuit).
13, 14
IFD+, IFD-
Diversity Mixer Differential IF Output +/-. Connect pullup inductors from each of these pins to VCC
(see the Typical Application Circuit).
15
IND_EXTD
Diversity External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and
LO-to-IF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical
Application Circuit).
17
LO_ADJ_D
LO Diversity Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current
for the diversity LO amplifier (see the Typical Application Circuit).
18, 28
N.C.
No Connection. Not internally connected.
19
LO1
Local Oscillator 1 Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
23
LOSEL
27
LO2
29
LO_ADJ_M
LO Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main LO amplifier (see the Typical Application Circuit).
31
IND_EXTM
Main External Inductor Connection. Connect this pin to ground. For improved RF-to-IF and LO-toIF isolation, connect a low-ESR 10nH inductor from this pin to ground (see the Typical Application
Circuit).
32, 33
IFM-, IFM+
Main Mixer Differential IF Output -/+. Connect pullup inductors from each of these pins to VCC (see
the Typical Application Circuit).
35
IFM_SET
IF Main Amplifier Bias Control. Connect a resistor from this pin to ground to set the bias current for
the main IF amplifier (see the Typical Application Circuit).
—
EP
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses
multiple ground vias to provide heat transfer out of the device into the PCB ground planes. These
multiple ground vias are also required to achieve the noted RF performance.
Diversity Channel RF input. Internally matched to 50I. Requires an input DC-blocking capacitor.
Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
Local Oscillator 2 Input. This input is internally matched to 50I. Requires an input DC-blocking
capacitor.
Detailed Description
The MAX19994A is a dual-channel downconverter
designed to provide up to 8.4dB of conversion gain,
+25dBm input IP3, +14dBm 1dB input compression
point, and a noise figure of 9.8dB.
In addition to its high-linearity performance, the device
achieves a high level of component integration. The
device integrates two double-balanced mixers for twochannel downconversion. Both the main and diversity
channels include a balun and matching circuitry to allow
50I single-ended interfaces to the RF ports and the two
LO ports. An integrated single-pole/double-throw (SPDT)
switch provides 50ns switching time between the two LO
inputs, with 48dB of LO-to-LO isolation and -42dBm of
LO leakage at the RF port. Furthermore, the integrated
LO buffers provide a high drive level to each mixer core,
reducing the LO drive required at the device's inputs to
a range of -6dBm to +3dBm. The IF ports for both channels incorporate differential outputs for downconversion,
which is ideal for providing enhanced 2LO - 2RF performance.
With an optimized 1450MHz to 2050MHz LO frequency
range, this mixer supports both high- and low-side LO
injection architectures for the 1200MHz to 1700MHz
and 1700MHz to 2000MHz RF bands, respectively. The
device also supports an IF range of 50MHz to 500MHz.
The external IF components set the lower frequency
range (see the Typical Operating Characteristics for
23
MAX19994A
Pin Description (continued)
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
details). Operation beyond these ranges is possible;
see the Typical Operating Characteristics for additional
information.
and matching components from the LO inputs to the IF
outputs are integrated on-chip.
Although this device is optimized for a 1450MHz to
2050MHz LO frequency range, it can operate with
even lower LO frequencies to support 1200MHz to
1700MHz low-side LO injection architectures. However,
performance degrades as fLO continues to decrease.
Contact the factory for a variant with increased low-side
LO performance.
The core of the MAX19994A dual-channel downconverter consists of two double-balanced, high-performance
passive mixers. Exceptional linearity is provided by the
large LO swing from the on-chip LO buffers. When combined with the integrated IF amplifiers, the cascaded
IIP3, 2LO - 2RF rejection, and noise-figure performance
are typically +25dBm, 68dBc, and 9.8dB, respectively.
RF Port and Balun
The RF input ports for both the main and diversity channels are internally matched to 50I, requiring no external matching components when operating the device
over a 1200MHz to 1700MHz RF frequency range.
A DC-blocking capacitor is required as the input is
internally DC shorted to ground through the on-chip
balun. The RF port input return loss is typically better
than 15dB over the 1200MHz to 1700MHz RF frequency
range.
The RF inputs of the device can also be matched to
operate over an extended 1700MHz to 2000MHz RF
frequency range of with the addition of two shunt 4.7nH
inductors. See Table 1 for details.
LO Inputs, Buffer, and Balun
The device is optimized for a 1450MHz to 2050MHz
LO frequency range. As an added feature, the device
includes an internal LO SPDT switch for use in frequencyhopping applications. The switch selects one of the two
single-ended LO ports, allowing the external oscillator to
settle on a particular frequency before it is switched in.
LO switching time is typically 50ns, which is more than
adequate for typical GSM applications. If frequency hopping is not employed, simply set the switch to either of
the LO inputs. The switch is controlled by a digital input
(LOSEL), where logic-high selects LO1 and logic-low
selects LO2. LO1 and LO2 inputs are internally matched
to 50I, requiring only 39pF DC-blocking capacitors.
If LOSEL is connected directly to a logic source, then
voltage MUST be applied to VCC before digital logic
is applied to LOSEL to avoid damaging the part.
Alternatively, a 1kI resistor can be placed in series at
the LOSEL to limit the input current in applications where
LOSEL is applied before VCC.
The main and diversity channels incorporate a two-stage
LO buffer that allows for a wide-input power range for
the LO drive. The on-chip low-loss baluns, along with LO
buffers, drive the double-balanced mixers. All interfacing
24
High-Linearity Mixer
Differential IF
The device has a 50MHz to 500MHz IF frequency range,
where the low-end frequency depends on the frequency
response of the external IF components. Note that these
differential ports are ideal for providing enhanced IIP2
performance. Single-ended IF applications require a
4:1 (impedance ratio) balun to transform the 200I differential IF impedance to a 50I single-ended system.
After the balun, the return loss is typically 13dB. The user
can use a differential IF amplifier on the mixer IF ports,
but a DC block is required on both IFD+/IFD- and IFM+/
IFM- ports to keep external DC from entering the IF ports
of the mixer.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to
50I when operating over 1200MHz to 1700MHz and
1450MHz to 2050MHz frequency ranges, respectively.
No matching components are required for operation
within these bands. The RF port input return loss is
typically better than 15dB over the 1200MHz to 1700MHz
RF frequency range and return loss at the LO ports is
typically better than 15dB over the entire LO range. RF
and LO inputs require only DC-blocking capacitors for
interfacing.
If operating the device over the Extended RF Band of
1700MHz to 2000MHz, simply change the DC-blocking
capacitors to 1.8pF and add a shunt 4.7nH inductor to
each RF port. See Table 1 for details. When matched with
this alternative set of elements, the RF port input return
loss is typically better than 14dB over the 1700MHz to
2000MHz band.
The IF output impedance is 200I (differential). For evaluation, an external low-loss 4:1 (impedance ratio) balun
transforms this impedance to a 50I single-ended output
(see the Typical Application Circuit).
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Significant reductions in power consumption can also
be realized by operating the mixer with an optional 3.3V
supply voltage. Doing so reduces the overall power consumption by approximately 47%. See the 3.3V Supply
AC Electrical Characteristics table and the relevant 3.3V
curves in the Typical Operating Characteristics section.
IND_EXT_ Inductors
For applications requiring optimum RF-to-IF and LO-toIF isolation, connect low-ESR inductors from IND_EXT_
(pins 15 and 31) to ground. When improved isolation
is not required, connect IND_EXT_ to ground using 0I
resistance.
Layout Considerations
A properly designed PCB is an essential part of any
RF/microwave circuit. Keep RF signal lines as short as
possible to reduce losses, radiation, and inductance.
The load impedance presented to the mixer must be
such that any capacitance from both IF_- and IF_+ to
ground does not exceed several picofarads. For the
best performance, route the ground pin traces directly
to the exposed pad under the package. The PCB
exposed pad MUST be connected to the ground plane
of the PCB. Use multiple vias to connect this pad to the
lower-level ground planes. This method provides a good
RF/thermal-conduction path for the device. Solder the
exposed pad on the bottom of the device package to
the PCB. The MAX19994A evaluation kit can be used as
a reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for highfrequency circuit stability. Bypass each VCC pin and
TAPMAIN/TAPDIV with the capacitors shown in the
Typical Application Circuit (see Table 1 for component
values). Place the TAPMAIN/TAPDIV bypass capacitors
to ground within 100 mils of the pin.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19994A’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which the
device is mounted be designed to conduct heat from
the EP. In addition, provide the EP with a low-inductance
path to electrical ground. The EP MUST be soldered to
a ground plane on the PCB, either directly or through an
array of plated via holes.
Table 1. Component Values
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
C1, C8
2
39pF microwave capacitors (0402)
1.8pF for Extended RF Band applications
(fRF = 1.7GHz to 2GHz)
Murata Electronics North America, Inc.
C2, C7, C14, C16
4
39pF microwave capacitors (0402)
Murata Electronics North America, Inc.
C3, C6
2
0.033FF microwave capacitors (0603)
Murata Electronics North America, Inc.
C4, C5
2
Not used
—
C9, C13, C15,
C17, C18
5
0.01FF microwave capacitors (0402)
Murata Electronics North America, Inc.
C10, C11, C12,
C19, C20, C21
6
150pF microwave capacitors (0603)
Murata Electronics North America, Inc.
L1, L2, L4, L5
4
120nH wire-wound, high-Q inductors (0805)
Coilcraft, Inc.
L3, L6
2
10nH wire-wound, high-Q inductors (0603). Smaller
values or a 0I resistor can be used at the expense of
some LO leakage at the IF port and RF-to-IF isolation
performance loss.
Coilcraft, Inc.
L7, L8
2
4.7nH inductor (0603). Installed for Extended RF Band
applications only (1.7GHz to 2GHz).
TOKO America, Inc.
25
MAX19994A
Reduced-Power Mode
Each channel of the device has two pins (LO_ADJ__,
IF__SET) that allow external resistors to set the internal
bias currents. Nominal values for these resistors are
given in Table 1. Larger value resistors can be used to
reduce power dissipation at the expense of some performance loss. If ±1% resistors are not readily available,
substitute with ±5% resistors.
Table 1. Component Values (continued)
DESIGNATION
QTY
R1, R4
DESCRIPTION
COMPONENT SUPPLIER
681I ±1% resistors (0402). Used for VCC = 5.0V
applications. Larger values can be used to reduce
power at the expense of some performance loss.
2
Digi-Key Corp.
681I ±1% resistors (0402). Used for VCC = 3.3V
applications.
R2, R5
1.82kI ±1% resistors (0402). Used for VCC = 5.0V
applications. Larger values can be used to reduce
power at the expense of some performance loss.
2
Digi-Key Corp.
1.43kI ±1% resistors (0402). Used for VCC = 3.3V
applications.
R3, R6
2
0I resistors (1206)
Digi-Key Corp.
T1, T2
2
4:1 transformers (200:50) TC4-1W-17
Mini-Circuits
U1
1
MAX19994A IC (36 TQFN-EP)
Maxim Integrated Products, Inc.
Typical Application Circuit
VCC
27
T1
N.C.
R3
IND_EXTM
IFMIFM+
VCC
GND
IFM_SET
VCC
R1
VCC
GND
LOSEL
GND
GND
LO1
T2
29
17
30
16
EXPOSED PAD
MAX19994A
LO_ADJ_D
IND_EXTD
14
33
13
34
12
35
11
36
10
IFD-
1
3
4
5
6
7
2
C2
8
9
C7
C8
C1
L7
C3
C4
VCC
RF MAIN INPUT
C5
L8
C6
VCC
RF DIV INPUT
R5
C12
L5
L4
R6
L6
IFD+
VCC
GND
IFD_SET
VCC
VCC
C9
C18
C13
4:1
C11
VCC
VCC
15
32
+
26
19
18 N.C.
31
L3
20
RFDIV
C17
IF DIV OUTPUT
28
GND
R2
21
TAPDIV
L2
VCC
22
VCC
L1
VCC
23
GND
C20
24
VCC
C21
25
LO1
C14
GND
C19
LO_ADJ_M
26
TAPMAIN
4:1
GND
LO2
C16
C15
VCC
IF MAIN OUTPUT
LO SELECT
GND
LO2
RFMAIN
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
R4
C10
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
PROCESS: SiGe BiCMOS
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
PACKAGE TYPE
PACKAGE CODE
DOCUMENT NO.
36 Thin QFN-EP
T3666+2
21-0141
27
MAX19994A
Chip Information
MAX19994A
Dual, SiGe, High-Linearity, 1200MHz to 2000MHz
Downconversion Mixer with LO Buffer/Switch
Revision History
REVISION
NUMBER
REVISION
DATE
0
4/10
DESCRIPTION
Initial release
PAGES
CHANGED
—
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
28
© 2010
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
Maxim Integrated Products
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