19-5479; Rev 0; 8/10
TION KIT
EVALUA BLE
AVAILA
Tiny Low-Noise Amplifiers for HSPA/LTE
The MAX2666/MAX2668 are a family of low-noise amplifiers (LNAs) intended for use in HSPA mobile handsets.
The LNAs provide three programmable gain states,
delivering superior optimization for linearity and sensitivity versus traditional two-gain-state LNAs.
The MAX2666 is optimized for use over the 2100MHz
to 2200MHz frequency range (bands 1, 4, and 10) and
offers a typical maximum gain of 14.5dB.
The MAX2668 is optimized for use over the 850MHz to
1000MHz frequency range (bands 5, 6, and 8) and provides a typical maximum gain of 17dB.
Features
S Small Footprint: 1mm x 1.5mm Package
S Thin Profile: 0.55mm
S Low Noise Figure
1dB for MAX2668
1.1dB for MAX2666
S Three Gain States for Optimum Blocker Handling
S 3.8mA Low Supply Current
S Low Bill of Materials
Each device is available in a tiny 1mm x 1.5mm, 6-pin
ultra-thin LGA package.
Ordering Information
Applications
PART
MAX2666EYT+
MAX2668EYT+
HSPA/LTE Front-End Modules
HSPA/LTE Preamplification
TEMP RANGE
PIN-PACKAGE
-40NC to +85NC
6 Ultra-Thin LGA
6 Ultra-Thin LGA
-40NC to +85NC
+Denotes a lead(Pb)-free/RoHS-compliant package.
Typical Operating Circuit
GAIN CONTROL TABLE FOR TWO GAIN STEPS
MAX2666
MAX2668
LNA_IN
1
6
VCC
GAIN1
GAIN0
GAIN
0
—
LOW
1
—
HIGH
GAIN CONTROL TABLE FOR THREE GAIN STEPS
2
5
CHOKE +
MATCHING
3
4
GAIN1
GAIN0
GAIN1
0
0
OFF
GAIN0
0
1
LOW
1
0
MID
1
1
HIGH
GAIN
LNA_OUT
________________________________________________________________ Maxim Integrated Products 1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
MAX2666/MAX2668
General Description
MAX2666/MAX2668
Tiny Low-Noise Amplifiers for HSPA/LTE
ABSOLUTE MAXIMUM RATINGS
VCC to GND...........................................................-0.3V to +3.6V
Other Pins to GND.................................... -0.3V to (VCC + 0.3V)
Maximum Input Power.................................................... +10dBm
Continuous Power Dissipation (TA = +70NC)
Ultra-Thin LGA (derate 2.1mW/NC above +70NC)........167mW
Operating Temperature Range........................... -40NC to +85NC
Junction Temperature......................................................+150NC
Storage Temperature Range............................. -65NC to +160NC
Lead Temperature (soldering, 10s).................................+260NC
Soldering Temperature (reflow).......................................+260NC
CAUTION! ESD SENSITIVE DEVICE
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical Operating Circuit, MAX2666/MAX2668 Evaluation Kit, GAIN1 = High, GAIN0 = High-Z, VCC = 2.7V to 3.3V, no RF signal
applied, TA = -40NC to +85NC. Typical values are at VCC = 2.85V, TA = +25NC, unless otherwise noted.) (Note 1)
PARAMETER
CONDITIONS
Supply Voltage
MIN
TYP
MAX
2.7
2.85
3.3
UNITS
V
Supply Current, High Gain
GAIN_ = 11
3.8
mA
Supply Current, Mid Gain
GAIN_ = 10
3.8
mA
Supply Current, Low Gain
GAIN_ = 01
100
FA
Shutdown Current
GAIN_ = 00
100
FA
Logic-High (VIH)
1.2
V
Logic-Low (VIL)
0.5
V
AC ELECTRICAL CHARACTERISTICS
(MAX2666/MAX2668 Evaluation Kit, input matching network according to Table 1 (input matching network), GAIN1 = High, GAIN0 =
High-Z, VCC = 2.85V, TA = +25NC, unless otherwise noted.)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
MHz
MAX2666
Frequency Range
Gain
Bands 1, 4, 10
2110
2140
2170
HG mode
10
14.5
17.5
MG mode, GAIN_ = 10
0
5
8.5
LG mode, GAIN_ = 01
-15.5
-12
-9
HG mode
Noise Figure
Input 3rd-Order Intercept (Note 2)
Phase Shift with Gain Step
dB
1.1
MG mode, GAIN_ = 10
3
LG mode, GAIN_ = 01
12
HG mode
-2
MG mode, GAIN_ = 10
4
LG mode, GAIN_ = 01
> 20
15
2 _______________________________________________________________________________________
dB
dBm
Degrees
Tiny Low-Noise Amplifiers for HSPA/LTE
(MAX2666/MAX2668 Evaluation Kit, input matching network according to Table 1 (input matching network), GAIN1 = High, GAIN0 =
High-Z, VCC = 2.85V, TA = +25NC, unless otherwise noted.)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Band 8
925
942
960
MHz
HG mode
13.5
17
21
MAX2668 (BAND 8)
Frequency Range
Gain
MG mode, GAIN_ = 10
0
5
8
LG mode, GAIN_ = 01
-19
-16
-13
HG mode
Noise Figure
Input 3rd-Order Intercept (Note 2)
dB
1
MG mode, GAIN_ = 10
5
LG mode, GAIN_ = 01
16
HG mode
-4
MG mode, GAIN_ = 10
2
LG mode, GAIN_ = 01
> 18
Phase Shift with Gain Step
dB
dBm
15
Degrees
MAX2668 (BAND 5, BAND 6)
Frequency Range
Gain
Bands 5 and 6
869
881.52
894
HG mode
21
13.5
17
MG mode, GAIN_ = 10
0
5
8
LG mode, GAIN_ = 01
-19
-16
-13
HG mode
Noise Figure
Input 3rd-Order Intercept (Note 2)
Phase Shift with Gain Step
MHz
dB
1
MG mode, GAIN_ = 10
5
LG mode, GAIN_ = 01
16
HG mode
-5
MG mode, GAIN_ = 10
2
LG mode, GAIN_ = 01
> 18
15
dB
dBm
Degrees
Note 1: Guaranteed by test at TA = +25NC; guaranteed by designed and characterization at TA = -40NC and TA = +85NC.
Note 2: -25dBm/tone at high gain, -15dBm/tone at mid gain, -15dBm/tone at low gain. Tone separation less than 5MHz.
_______________________________________________________________________________________ 3
MAX2666/MAX2668
AC ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(MAX2666/MAX2668 Evaluation Kit. Typical values are at VCC = 2.85V, TA = +25°C, unless otherwise noted.)
MAX2666 GAIN
vs. FREQUENCY AND TEMPERATURE
MID-GAIN MODE
TA = -40°C
-11.0
MAX2666 toc02
6.0
MAX2666 toc01
16
MAX2666 GAIN
vs. FREQUENCY AND TEMPERATURE
LOW-GAIN MODE
MAX2666 toc03
MAX2666 GAIN
vs. FREQUENCY AND TEMPERATURE
HIGH-GAIN MODE
-11.5
TA = -40°C
5.5
15
TA = +25°C
GAIN (dB)
GAIN (dB)
GAIN (dB)
-12.0
14
5.0
-12.5
-13.0
TA = +25°C
TA = +85°C
-13.5
TA = +85°C
13
2110
2120
2130
2140
2150
2160
2110
2170
2120
2130
2140
2150
2160
-14.0
2170
2110
2120
2130
2140
2150
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
MAX2666 NOISE FIGURE
vs. FREQUENCY AND TEMPERATURE
HIGH-GAIN MODE
MAX2666 IIP3 vs. SUPPLY
VOLTAGE AND TEMPERATURE
MID BAND 10; 5MHz TONE'S SEPARATION
MAX2666 S11
HIGH-GAIN MODE
1.30
IIP3 (dBm)
1.40
TA = +25°C
1.20
1.10
1.00
TA = -40°C
0.90
0.80
0.70
2130
2140
2150
2160
2170
-2
LOW GAIN; TA = -40°C
-3
MID GAIN; TA = -40°C
-4
MID GAIN; TA = +85°C
-8
HIGH GAIN; TA = -40°C
2.8
2.9
3.0
-6
-7
HIGH GAIN; TA = +85°C
2.7
-5
-9
3.1
3.2
-10
3.3
1500
2000
2500
3000
RF FREQUENCY (MHz)
SUPPLY VOLTAGE (V)
FREQUENCY (MHz)
MAX2666 S22
HIGH-GAIN MODE
MAX2666 S21
HIGH-GAIN MODE
MAX2666 S12
HIGH-GAIN MODE
20
MAX2666 toc07
0
-1
-2
15
-3
-20
-22
-24
-26
S21 (dB)
-5
-6
S12 (dB)
10
-4
5
0
-7
-8
3500
MAX2666 toc09
2120
LOW GAIN; TA = +85°C
MAX2666 toc08
2110
0
2170
MAX2666 toc06
TA = +85°C
2160
-1
S11 (dB)
1.50
24
22
20
18
16
14
12
10
8
6
4
2
0
-2
MAX2666 toc05
1.60
MAX2666 toc04
RF FREQUENCY (MHz)
1.70
NF (dB)
TA = +85°C
4.0
TA = -40°C
TA = +25°C
4.5
S22 (dB)
MAX2666/MAX2668
Tiny Low-Noise Amplifiers for HSPA/LTE
-28
-30
-32
-34
-36
-5
-9
-38
-10
-10
1500
2000
2500
FREQUENCY (MHz)
3000
3500
1500
2000
2500
FREQUENCY (MHz)
3000
3500
-40
1500
2000
2500
FREQUENCY (MHz)
4 _______________________________________________________________________________________
3000
3500
Tiny Low-Noise Amplifiers for HSPA/LTE
19
-14
MAX2668 toc11
7
MAX2668 toc10
20
MAX2668 GAIN
vs. FREQUENCY AND TEMPERATURE
LOW-GAIN MODE
MAX2668 GAIN
vs. FREQUENCY AND TEMPERATURE
MID-GAIN MODE
TA = -40°C
TA = -40°C
-15
MAX2668 toc12
MAX2668 GAIN
vs. FREQUENCY AND TEMPERATURE
HIGH-GAIN MODE
TA = +25°C
17
GAIN (dB)
TA = -40°C
18
GAIN (dB)
GAIN (dB)
6
TA = +25°C
-16
TA = +85°C
5
TA = +25°C
-17
TA = +85°C
16
TA = +85°C
4
15
860 870 880 890 900 910 920 930 940 950 960
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
MAX2668 NOISE FIGURE
vs. FREQUENCY AND TEMPERATURE
HIGH-GAIN MODE
MAX2668 IIP3 vs. SUPPLY
VOLTAGE AND TEMPERATURE
MID BAND 8; 5MHz TONE'S SEPARATION
MAX2668 S11
HIGH-GAIN MODE
1.2
1.0
TA = +25°C
0.9
0.8
TA = -40°C
0.7
0.6
MID GAIN; TA = -40°C
MID GAIN; TA = +85°C
-8
-10
-12
-14
HIGH GAIN; TA = +85°C
HIGH GAIN; TA = -40°C
2.8
2.9
3.0
3.1
3.2
-16
-18
-20
3.3
500
1000
1500
2000
RF FREQUENCY (MHz)
SUPPLY VOLTAGE (V)
FREQUENCY (MHz)
MAX2668 S22
HIGH-GAIN MODE
MAX2668 S21
HIGH-GAIN MODE
MAX2668 S12
HIGH-GAIN MODE
10
-8
5
S21 (dB)
-6
-10
-12
-5
-16
-10
-18
-45
-50
-20
-22
1000
1500
FREQUENCY (MHz)
2000
2500
-35
-40
-15
-20
-25
-30
0
-14
-20
S12 (dB)
-4
15
2500
MAX2668 toc18
20
MAX2668 toc16
0
-2
500
MAX2668 toc15
-6
LOW GAIN; TA = +85°C
2.7
860 870 880 890 900 910 920 930 940 950 960
-4
LOW GAIN; TA = -40°C
MAX2668 toc17
NF (dB)
1.1
IIP3 (dBm)
TA = +85°C
0
-2
S11 (dB)
1.3
22
20
18
16
14
12
10
8
6
4
2
0
-2
-4
-6
860 870 880 890 900 910 920 930 940 950 960
MAX2668 toc14
MAX2668 toc13
1.4
S22 (dB)
-18
860 870 880 890 900 910 920 930 940 950 960
500
1000
1500
FREQUENCY (MHz)
2000
2500
500
1000
1500
2000
2500
FREQUENCY (MHz)
_______________________________________________________________________________________ 5
MAX2666/MAX2668
Typical Operating Characteristics (continued)
(MAX2666/MAX2668 Evaluation Kit. Typical values are at VCC = 2.85V, TA = +25°C, unless otherwise noted.)
Tiny Low-Noise Amplifiers for HSPA/LTE
MAX2666/MAX2668
Pin Configuration
TOP VIEW
VCC
GAIN1
LNA_OUT/
GAIN0
6
5
4
MAX2666
MAX2668
1
2
3
LNA_IN
BIAS_GND
LNA_GND
ULTRA-THIN LGA
Pin Description
PIN
NAME
1
LNA_IN
FUNCTION
2
BIAS_GND
DC and Bias Ground
3
LNA_GND
RF Ground
4
LNA_OUT/GAIN0
5
GAIN1
6
VCC
RF Input. Match according to band in Table 1.
RF Output and Gain Control. Internally match to 50I. Couple gain logic with a 20kI
resistor. When DC is open-circuit, pin self-biases to logic-high.
Gain Control. Together with GAIN0, selects gain mode. Must be connected to
logic-high or logic-low.
Supply Voltage. Bypass with a 1000pF capacitor to ground.
6 _______________________________________________________________________________________
Tiny Low-Noise Amplifiers for HSPA/LTE
of the GND pins is essential. If the PCB uses a top-side
RF ground, connect it directly to the GND pins. For a
board where the ground is not on the component layer,
connect the GND pins to the board with multiple vias
close to the package.
The MAX2666/MAX2668 are low-power LNAs designed
for 3G mobile applications. The devices feature low
noise, high linearity, and three gain steps in a tiny plastic
package.
Gain Control
Input and Output Matching
The devices’ LNA_OUT/GAIN0 pin is also used as a
control pin for the LNA gain modes according to the gain
control table. GAIN0 logic level is set through an external
20kI resistor. An external DC-blocking capacitor should
be used to isolate the control function of this dual-purpose pin (see the Typical Operating Circuit). The GAIN1
pin must be set to either logic-high or logic-low.
The devices require one matching inductor at the input
port in series with a DC-blocking capacitor to achieve
optimal performance in NF, gain, IIP3, and phase shift.
Table 1 presents the recommended input-matching
network values. The output port is internally matched to
50I, eliminating the need for external matching components. At the output port, an external DC-blocking
capacitor should be used to isolate the control function
of the output pin.
Refer to www.maxim-ic.com for the MAX2666/MAX2668
Evaluation Kit schematic, Gerber data, PADS layout file,
and BOM information.
DC Decoupling and Layout
Table 1. Matching Component Values in
Different Bands
A properly designed PCB is essential to any RF microwave circuit. Use controlled-impedance lines on all
high-frequency inputs and outputs. Bypass VCC with a
decoupling capacitor located close to the device.
For long VCC lines, it might be necessary to add decoupling capacitors. Locate these additional capacitors
further away from the device package. Proper grounding
BAND
SERIES C (nF)
SERIES L (nH)
1, 4, 10
10
3.9
5, 6
10
12
8
10
12
Detailed Application Circuit in EV Kit
VCC
RFIN
C4
0.01µF
10%
(0201)
L4
3.9nH Q0.1nH (MAX2666)
12nH Q0.2nH (MAX2668)
(0402)
1
2
C1
0.01µF
10%
(0402)
C5
1000pF
10%
(0402)
GAIN1
LNA_IN
BIAS_GND
VCC
U1
GAIN1
6
5
MAX2666
MAX2668
C7
OPEN
(0201)
3
GND
LNA_GND
LNA_OUT/GAIN0
4
R1
0I
(0201)
R2
0I
(0201)
GAIN0
R4
20kI
(0201)
C3
0.01µF
10%
(0201)
RFOUT
_______________________________________________________________________________________ 7
MAX2666/MAX2668
Detailed Description
MAX2666/MAX2668
Tiny Low-Noise Amplifiers for HSPA/LTE
Chip Information
PROCESS: SiGe BiCMOS
Package Information
For the latest package outline information and land patterns,
go to www.maxim-ic.com/packages. Note that a “+”, “#”, or
“-” in the package code indicates RoHS status only. Package
drawings may show a different suffix character, but the drawing
pertains to the package regardless of RoHS status.
PACKAGE
TYPE
PACKAGE
CODE
OUTLINE
NO.
LAND
PATTERN NO.
6 Ultra-Thin
LGA
Y61A1+2
21-0190
90-0233
8 _______________________________________________________________________________________
Tiny Low-Noise Amplifiers for HSPA/LTE
REVISION
NUMBER
REVISION
DATE
0
8/10
DESCRIPTION
Initial release
PAGES
CHANGED
—
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
© 2010
Maxim Integrated Products
9
Maxim is a registered trademark of Maxim Integrated Products, Inc.
MAX2666/MAX2668
Revision History
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