MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
General Description
Benefits and Features
The biopotential channel has ESD protection, EMI filtering,
internal lead biasing, DC leads-off detection, ultra-low
power leads-on detection during standby mode. Soft powerup sequencing ensures no large transients are injected
into the electrodes. The biopotential channel also has high
input impedance, low noise, high CMRR, programmable
gain, various low-pass and high-pass filter options, and
a high resolution analog-to-digital converter. The
biopotential channel is DC coupled, can handle large
electrode voltage offsets, and has a fast recovery mode
to quickly recover from overdrive conditions, such as
defibrillation and electrosurgery.
●● Clinical-Grade Biopotential AFE with High-Resolution
Data Converter
• 15.5 Bits Effective Resolution with 5µVP-P Noise
The MAX30004 is a complete, biopotential, analog frontend solution for wearable applications. It offers high
performance for clinical and fitness applications, with
ultra-low power for long battery life. The MAX30004 is a
single biopotential channel providing heart rate detection.
The MAX30004 is available in a 28-pin TQFN and
30-bump wafer-level package (WLP), operating over the
0°C to +70°C commercial temperature range.
Applications
●● Single Lead Wireless Patches for At-Home/
In-Hospital Monitoring
●● Chest Band Heart Rate Monitors for Fitness Applications
Ordering Information appears at end of data sheet.
●● Heart Rate Detection with Interrupt Feature
Eliminates the Need to Extract and Process the ECG
Data on the Microcontroller
• Robust R-R Detection in High Motion Environment
at Extremely Low Power
●● Better Dry Starts Due to Much Improved Real World
CMRR and High Input Impedance
• Fully Differential Input Structure with CMRR > 100dB
●● Offers Better Common-Mode to Differential Mode
Conversion Due to High Input Impedance
• High Input Impedance > 500MΩ for Extremely Low
Common-to-Differential Mode Conversion
●● Minimum Signal Attenuation at the Input During Dry
Start Due to High Electrode Impedance
●● High DC Offset Range of ±650mV (1.8V, typ) Allows
to Be Used with Wide Variety of Electrodes
●● High AC Dynamic Range of 65mVP-P Will Help the
AFE Not Saturate in the Presence of Motion/Direct
Electrode Hits
●● Longer Battery Life Compared to Competing Solutions
• 85µW at 1.1V Supply Voltage
●● Leads-On Interrupt Feature Keeps µC in Deep Sleep
Mode with RTC Off Until Valid Lead Condition is
Detected
• Lead-On Detect Current: 0.7µA (typ)
●● Configurable Interrupts Allows the µC Wake-Up Only on
Every Heart Beat Reducing the Overall System Power
●● High-Speed SPI Interface
●● Shutdown Current of 0.5µA (typ)
19-8732; Rev 0; 12/16
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Functional Diagram
AVDD
DVDD
OVDD
MAX30004
BIOPOTENTIAL CHANNEL
CSB
INP
INN
AAF
ESD , EMI ,
INPUT MUX ,
DC LEAD
CHECK
INPUT
AMP
f-3dB
=600 Hz
18-BIT
ΣΔ ADC
PGA
R-TO-R
DETECTOR
DECIMATION
FILTER
SDI
14 -BIT
SCLK
SPI INTERFACE
AND
REGISTERS
-40dB/dec
FAST
SETTLING
SDO
INTB
CAPP
INT2B
CAPN
SUPPORT CIRCUITRY
COMMON -MODE
BUFFER
REFERENCE
BUFFER
fCLK
BANDGAP
AGND
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VCM
BIASING
VBG
VREF
PLL
CPLL
SEQUENCER
FCLK
fHFC
DGND
Maxim Integrated │ 2
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Absolute Maximum Ratings
AVDD to AGND......................................................-0.3V to +2.0V
DVDD to DGND.....................................................-0.3V to +2.0V
AVDD to DVDD.......................................................-0.3V to +0.3V
OVDD to DGND.....................................................-0.3V to +3.6V
AGND to DGND....................................................-0.3V to +0.3V
CSB, SCLK, SDI, FCLK to DGND........................-0.3V to +3.6V
SDO, INTB, INT2B to
DGND..............-0.3V to the lower of (3.6V and OVDD + 0.3V)
All other pins to
AGND...............-0.3V to the lower of (2.0V and AVDD + 0.3V)
Maximum Current into Any Pin.........................................±50mA
Continuous Power Dissipation (TA = +70°C)
28-Pin TQFN (derate 34.5mW/°C above +70°C)....2758.6mW
30-Bump WLP (derate 24.3mW/°C
above +70°C)......................................................1945.5mW
Operating Temperature Range................................0°C to +70°C
Junction Temperature.......................................................+150°C
Storage Temperature Range............................. -65°C to +150°C
Lead Temperature (Soldering, 10sec).............................. +300°C
Soldering Temperature (reflow)........................................+260°C
Package Thermal Characteristics (Note 1)
TQFN
Junction-to-Ambient Thermal Resistance (θJA)...........29°C/W
Junction-to-Case Thermal Resistance (θJC)..................2°C/W
WLP
Junction-to-Ambient Thermal Resistance (θJA)...........44°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(VDVDD = VAVDD = +1.1V to +2.0V, VOVDD = +1.65V to +3.6V, fFCLK = 32.768kHz, TA = TMIN to TMAX, unless otherwise noted. Typical
values are at VDVDD = VAVDD = +1.8V, VOVDD = +2.5V, TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN
VAVDD = +1.1V, THD < 0.3%
-15
TYP
MAX
UNITS
BIOPOTENTIAL CHANNEL
AC Differential Input Range
VAVDD = +1.8V, THD < 0.3%
VAVDD = +1.1V, shift from nominal gain < 2%
DC Differential Input Range
Common Mode Input Range
Common Mode Rejection
Ratio
±32.5
-300
VAVDD = +1.8V
VAVDD = +1.1V, from VMID, shift from
nominal gain < 2%
0W source impedance, f = 64Hz (Note 3)
-150
105
BW = 0.05 - 40Hz, GCH = 20x (Note 3)
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Common-mode, DC
Differential, DC
+150
115
dB
77
Input Referred Noise
Input Impedance (INA)
mV
mV
(Note 4)
TA = +25°C
mVp-p
±550
BW = 0.05 - 150Hz, GCH = 20x
Input Leakage Current
+300
±650
VAVDD = +1.8V, from VMID, shift from
nominal gain < 2%
CMRR
+15
-1
0.82
µVRMS
5.4
µVp-p
0.53
1.0
µVRMS
3.5
6.6
µVp-p
0.1
+1
nA
45
GΩ
1500
MΩ
Maxim Integrated │ 3
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Electrical Characteristics (continued)
(VDVDD = VAVDD = +1.1V to +2.0V, VOVDD = +1.65V to +3.6V, fFCLK = 32.768kHz, TA = TMIN to TMAX, unless otherwise noted. Typical
values are at VDVDD = VAVDD = +1.8V, VOVDD = +2.5V, TA = +25°C.) (Note 2)
PARAMETER
Total Harmonic Distortion
Gain Setting
SYMBOL
THD
GCH
Gain Error
Offset Error
CONDITIONS
MIN
VAVDD = +1.80V, VIN = 65mVp-p,
FIN = 64Hz, GCH = 20x,
electrode offset = ±300mV
0.3
20 to
160
Programmable, see Register Map
Analog High-Pass Filter Slew
Current
-2.5
+2.5
%
VAVDD = +1.1V, GCH = 20x,
INP = INN = VMID
-4.5
+4.5
%
FHP = 1/(2R x RHPF x CHPF), CHPF =
capacitance between CAPP and CAPN
320
0.1
% of
FSR
18
Bits
125 to
512
SPS
450
Fast recovery enabled (1.8V)
160
Fast recovery enabled (1.1V)
55
Fast recovery disabled
0.09
Fast Settling Recovery Time
CHPF = 10µF
500
Digital Low Pass Filter
Linear phase
FIR filter.
Digital High Pass Filter
Power Supply Rejection
PSRR
V/V
VAVDD = +1.8V, GCH = 20x,
INP = INN = VMID
Programmable, see Register Map
RHPF
UNITS
%
VAVDD = +1.1V, VIN = 30mVp-p,
FIN = 64Hz, GCH = 20x,
electrode offset = ±300mV
ADC Resolution
CAPP to CAPN Impedance
MAX
0.025
(Note 5)
ADC Sample Rate
TYP
DLPF[0:1] = 01
40
DLPF[0:1] = 10
100
DLPF[0:1] = 11
150
Phase-corrected 1st-order IIR filter. DHPF = 1
0.5
Lead bias disabled, DC
107
Lead bias disabled, fSW = 64Hz
110
600
kΩ
µA
ms
Hz
Hz
dB
INPUT MUX
DC Lead Off Check
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Pullup/
pulldown
DCLOFF_IMAG[2:0] = 001
5
DCLOFF_IMAG[2:0] = 010
10
DCLOFF_IMAG[2:0] = 011
20
DCLOFF_IMAG[2:0] = 100
50
DCLOFF_IMAG[2:0] = 101
100
nA
Maxim Integrated │ 4
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Electrical Characteristics (continued)
(VDVDD = VAVDD = +1.1V to +2.0V, VOVDD = +1.65V to +3.6V, fFCLK = 32.768kHz, TA = TMIN to TMAX, unless otherwise noted. Typical
values are at VDVDD = VAVDD = +1.8V, VOVDD = +2.5V, TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
DC Lead Off Comparator Low
Threshold
DC Lead Off Comparator
High Threshold
VMID
MIN
TYP
MAX
DCLOFF_VTH[1:0] = 11 (Note 6)
VMID - 0.50
DCLOFF_VTH[1:0] = 10 (Note 7)
VMID - 0.45
DCLOFF_VTH[1:0] = 01 (Note 8)
VMID - 0.40
DCLOFF_VTH[1:0] = 00
VMID - 0.30
DCLOFF_VTH[1:0] = 11 (Note 6)
VMID + 0.50
DCLOFF_VTH[1:0] = 10 (Note 7)
VMID + 0.45
DCLOFF_VTH[1:0] = 01 (Note 8)
VMID + 0.40
DCLOFF_VTH[1:0] = 00
VMID + 0.30
Lead bias
enabled
Lead Bias Impedance
Lead Bias Voltage
CONDITIONS
RBIASV[1:0] = 00
50
RBIASV[1:0] = 01
100
RBIASV[1:0] = 10
200
Lead bias enabled
UNITS
V
V
MΩ
VAVDD/
2.15
V
0.650
V
100
kΩ
INTERNAL REFERENCE/COMMON-MODE
VBG Output Voltage
VBG
VBG Output Impedance
External VBG Compensation
Capacitor
CVBG
VREF Output Voltage
VREF
VREF Temperature Coefficient
TCREF
1
TA = +25°C
0.995
TA = 0°C to +70°C
VREF Buffer Line Regulation
VREF Buffer Load
Regulation
ILOAD = 0 to 100µA
External VREF Compensation
Capacitor
CREF
VCM Output Voltage
VCM
External VCM Compensation
Capacitor
CCM
1
1
µF
1.000
1.005
V
10
ppm/°C
330
µV/V
25
µV/µA
10
µF
0.650
V
10
µF
DIGITAL INPUTS (SDI, SCLK, CSB, FCLK)
Input-Voltage High
VIH
Input-Voltage Low
VIL
Input Hysteresis
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VHYS
0.7 ×
VOVDD
V
0.3 ×
VOVDD
0.05 ×
VOVDD
V
V
Maxim Integrated │ 5
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Electrical Characteristics (continued)
(VDVDD = VAVDD = +1.1V to +2.0V, VOVDD = +1.65V to +3.6V, fFCLK = 32.768kHz, TA = TMIN to TMAX, unless otherwise noted. Typical
values are at VDVDD = VAVDD = +1.8V, VOVDD = +2.5V, TA = +25°C.) (Note 2)
PARAMETER
SYMBOL
Input Capacitance
CIN
Input Current
IIN
CONDITIONS
MIN
TYP
MAX
10
-1
UNITS
pF
+1
µA
DIGITAL OUTPUTS (SDO, INTB, INT2B)
Output Voltage High
VOH
ISOURCE = 1mA
Output Voltage Low
VOL
ISINK = 1mA
Three-State Leakage Current
VOVDD
– 0.4
V
-1
Three-State Output
Capacitance
0.4
V
+1
µA
15
pF
POWER SUPPLY
Analog Supply Voltage
VAVDD
Connect VAVDD to VDVDD
1.1
2.0
V
Digital Supply Voltage
VDVDD
Connect VDVDD to VAVDD
1.1
2.0
V
Interface Supply Voltage
VOVDD
Power for I/O drivers only
1.65
3.6
V
122
µA
Supply Current
IAVDD +
IDVDD
R-R
Operation
ULP Lead
On Detect
Interface Supply Current
Shutdown Current
VAVDD = VDVDD = +1.1V
76
VAVDD = VDVDD = +1.8V
100
VAVDD = VDVDD = +2.0V
110
TA = +70°C
0.98
TA = +25°C
0.73
VOVDD = +1.65V, ADC at 512sps (Note 9)
0.2
VOVDD = +3.6V, ADC at 512sps (Note 9)
0.6
ISAVDD +
ISDVDD
VAVDD =
VDVDD =
2.0V
TA = +70°C
0.79
TA = +25°C
0.51
ISOVDD
VOVDD = +3.6V, VAVDD = VDVDD = +2.0V
IOVDD
2.5
1.6
2.5
µA
µA
1.1
ESD PROTECTION
INP, INN
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IEC61000-4-2 Contact Discharge (Note 10)
±8
IEC61000-4-2 Air-Gap Discharge (Note 10)
±15
HMM
±8
kV
Maxim Integrated │ 6
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Timing Characteristics
(VDVDD = VAVDD = +1.1V to +2.0V, VOVDD = +1.65V to +3.6V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDVDD = +1.8V, VOVDD = +2.5V, TA = +25°C.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
12
MHz
TIMING CHARACTERISTICS
SCLK Frequency
fSCLK
0
SCLK Period
tCP
83
ns
SCLK Pulse Width High
tCH
15
ns
SCLK Pulse Width Low
tCL
15
ns
CSB Fall to SCLK Rise
Setup Time
tCSS0
To 1st SCLK rising edge (RE)
15
ns
CSB Fall to SCLK Rise
Hold Time
tCSH0
Applies to inactive RE preceding 1st RE
0
ns
CSB Rise to SCLK Rise
Hold Time
tCSH1
Applies to 32nd RE, executed write
10
ns
CSB Rise to SCLK Rise
tCSA
Applies to 32nd RE, aborted write
sequence
15
ns
SCLK Rise to CSB Fall
tCSF
Applies to 32nd RE
100
ns
CSB Pulse-Width High
tCSPW
20
ns
SDI-to-SCLK Rise Setup Time
tDS
8
ns
SDI to SCLK Rise Hold Time
tDH
8
ns
SCLK Fall to SDO Transition
tDOT
SCLK Fall to SDO Hold
tDOH
CLOAD = 20pf
CSB Fall to SDO Fall
tDOE
Enable time, CLOAD = 20pf
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CLOAD = 20pf
40
ns
CLOAD = 20pf, VAVDD = VDVDD ≥ 1.8V,
VDVDD ≥ 2.5V
20
ns
2
ns
30
ns
Maxim Integrated │ 7
MAX30004
Ultra-Low Power, Single-Channel Integrated
Biopotential (R-to-R Detection) AFE
Timing Characteristics (continued)
(VDVDD = VAVDD = +1.1V to +2.0V, VOVDD = +1.65V to +3.6V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDVDD = +1.8V, VOVDD = +2.5V, TA = +25°C.) (Notes 2, 3)
PARAMETER
SYMBOL
CONDITIONS
MIN
CSB Rise to SDO Hi-Z
tDOZ
Disable time
FCLK Frequency
fFCLK
External reference clock
FCLK Period
tFP
FCLK Pulse-Width High
tFH
FCLK Pulse-Width Low
tFL
TYP
MAX
UNITS
35
ns
32.768
kHz
30.52
µs
50% duty cycle assumed
15.26
µs
50% duty cycle assumed
15.26
µs
Note 2: Limits are 100% tested at TA = +25°C. Limits over the operating temperature range and relevant supply voltage range are
guaranteed by design and characterization.
Note 3: Guaranteed by design and characterization. Not tested in production.
Note 4: One electrode drive with