19-3974; Rev 1; 4/07
KIT
ATION
EVALU
E
L
B
AVAILA
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
The MAX8811 2-phase gate driver controls power
MOSFETs in multiphase synchronous step-down converter applications, providing up to 30A output current
per phase. The MAX8811 and MAX8810A (multiphase
power-supply controller) combine to provide an efficient,
low-cost solution for a wide range of multiphase powersupply applications. The MAX8811 handles system input
voltages up to 26V. Each MOSFET driver is capable of
driving 3000pF capacitive loads with 11ns typical rise
and fall times.
Adaptive shoot-through protection circuitry is implemented to prevent shoot-through currents for the “highside off to low-side on” transition. A programmable
delay is provided for the “low-side off to high-side on”
transition. This maximizes overall converter efficiency
while supporting operation with a variety of MOSFETs.
The MAX8811 provides an easy upgrade path from the
MAX8523 dual driver. Integrated bootstrap diodes
reduce external component count, while an enable
input provides flexibility for power sequencing. The
MAX8811 is available in a space-saving, 16-pin QSOP.
Features
♦ Dual-Phase Synchronous Buck Driver
♦ Integrated Bootstrap Diodes
♦ Up to 26V System Input Voltage
♦ 6A Peak Gate Drive Current
♦ Capable of 30A per Phase
♦ 0.4Ω/0.9Ω Low-Side, 0.7Ω/1.0Ω High-Side
Drivers (typ)
♦ Typical 11ns Rise/Fall Times with 3000pF Load
♦ Adaptive Dead-Time Control
♦ User-Programmable Delay Time
♦ Enable Function with 0.04µA (typ) Quiescent
Current in Shutdown
♦ Space-Saving, Lead-Free, 16-Pin QSOP
Ordering Information
Applications
Processor Core Voltage Regulators
Multiphase Buck Converters
Voltage-Regulator Modules (VRMs)
PART
TEMP RANGE
PINPACKAGE
PKG
CODE
MAX8811EEE+
-40°C to +85°C
16 QSOP
E16-4
+Denotes a lead-free package.
Switching Power Supplies
DC-DC Converter Modules
Pin Configuration
Typical Operating Circuit
GATE-DRIVE SUPPLY
4.5V TO 7V
4
TOP VIEW
13
BST1 1
+
POWER INPUT
UP TO 26V
VL1
VL2
DH1
BST1
16 BST2
DH1 2
15 DH2
LX1
LX1 3
14 LX2
DL1
VL1 4
MAX8811
DL1 5
8
13 VL2
DLY
PGND1
2
1
3
OUTPUT
5
+
6
12 DL2
PGND1 6
11 PGND2
EN 7
10 PWM2
MAX8811
ON
OFF
DLY 8
9
PWM1
DH2
7
9
QSOP
PWM CONTROL
SIGNALS
EN
BST2
PWM1
LX2
10 PWM2
DL2
PGND2
15
16
14
12
11
________________________________________________________________ Maxim Integrated Products
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
1
MAX8811
General Description
MAX8811
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
ABSOLUTE MAXIMUM RATINGS
DLY, EN, PWM_, DL_ to PGND_.................-0.3V to (VVL_+ 0.3V)
BST_ to PGND_ ............................................-0.3V to (VLX_ + 8V)
BST_ to VL_ ...............................................................-1V to +30V
LX_ to PGND_............................................................-1V to +28V
DH_ to PGND_.........................................-0.3V to (VBST_ + 0.3V)
DH_, BST_ to LX_ .....................................................-0.3V to +8V
VL_ to PGND_ ..........................................................-0.3V to +8V
DH_, DL_ Current ................................................. ±200mA RMS
VL_ to BST_ Internal Diode Current .........................±50mA RMS
PGND1 to PGND2 .................................................-0.3V to +0.3V
Continuous Power Dissipation (TA = +70°C)
16-Pin QSOP (derate 8.3 mW/°C above +70°C)......666.7 mW
Operating Temperature Range ...........................-40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(VDLY = VEN = VBST_ = VVL_ = 6.5V, VPGND_ = VLX_ = VPWM_ = 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are
at TA = +25°C.) (Note 1)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
7
V
26
V
3.8
V
GENERAL
VL_ Input Voltage Range
4.5
LX Operating Range
VL_ Undervoltage Lockout
(UVLO)
Supply Current (per Channel)
IBST_ + IVL_
Shutdown Supply Current
(per Channel) IBST_ + IVL_
VVL_ rising, 250mV hysteresis (typ)
3.25
VPWM__= 0V
0.7
1.5
VPWM__ = VDLY = VVL_
1.4
2
VEN = 0V, VPWM_ = 0V or VVL_
0.04
1
VPWM_ = 0V or 7.0V, VEN = 0V or 7.0V
0.01
mA
µA
PWM_
Input Leakage
Input Voltage High Threshold
µA
3.5
Input Voltage Low Threshold
1.2
Input Threshold Hysteresis
V
V
20
%
0.01
µA
EN
Input Leakage
VPWM_ = 0V or 7.0V, VEN = 0V or 7.0V
Input Voltage High Threshold
Input Voltage Low Threshold
Input Voltage Hysteresis
2.6
0.8
V
V
0.5
V
DLY
Delay Disable Threshold
VVL_ - VDLY
2
0.8
_______________________________________________________________________________________
1.2
V
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
(VDLY = VEN = VBST_ = VVL_ = 6.5V, VPGND_ = VLX_ = VPWM_ = 0V, TA = -40°C to +85°C, unless otherwise noted. Typical values are
at TA = +25°C.) (Note 1)
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GATE DRIVER SPECIFICATIONS
VPWM_ = VVL_,
sourcing current
VBST_ = 6.5V, IDH_ = -0.1A
1.0
1.6
VPWM_ = 0V,
sinking current
VBST_ = 6.5V, IDH_ = 0.1A
0.7
1.1
VPWM_ = 0V,
sourcing current
VVL_ = 6.5V, IDL_= -0.1A
0.9
1.5
VPWM_ = VVL_,
sinking current
VVL_= 6.5V, IDL_= 0.1A
0.4
0.7
VPWM_ = VVL_
VBST_ = 6.5V, 3000pF load
14
ns
ns
DH_ Driver Resistance
Ω
DL_ Driver Resistance
DH_ Rise Time (trDH)
DH_ Fall Time (tfDH)
VPWM_ = 0V
VBST_ = 6.5V, 3000pF load
9
DL_ Rise Time (trDL)
VPWM_ = 0V
VVL_ = 6.5V, 3000pF load
11
ns
DL_ Fall Time (tfDL)
VPWM_ = VVL_
VVL_ = 6.5V, 3000pF load
8
ns
DH_ Propagation Delay
VPWM_ falling
(tpDHf)
VPWM_ = VVL _ ,
VDL _ falling (tpDHr)
DL_ Propagation Delay
VPWM_ rising
(tpDLf)
VPWM_ = GND,
LX falling (tpDLr)
20
VBST_ = 6.5V
ns
14
12
VBST_ - VLX_ = 6.5V
ns
16
INTERNAL BOOST DIODE SPECIFICATIONS
On-Resistance
IBST_ = 40mA
6
Ω
+165
°C
THERMAL SHUTDOWN
Thermal Shutdown
Rising temperature, hysteresis = 15°C (typ)
Note 1: Specifications at -40°C guaranteed by design.
_______________________________________________________________________________________
3
MAX8811
ELECTRICAL CHARACTERISTICS (continued)
Typical Operating Characteristics
(VVL1 = VVL2 = VEN = VDLY = 6.5V, 3000pF capacitive load, TA = +25°C, unless otherwise noted.)
VL_ POWER DISSIPATION
vs. LOAD CAPACITANCE
400
300
200
300
250
200
150
25
fSW = 200kHz
0
0
800
1000
1000
3000
fS (kHz)
DH RISE/FALL TIME
vs. LOAD CAPACITANCE
25
14
TIME (ns)
20
15
DH FALL
5000
7000
VL_ SUPPLY CURRENT vs. PER-PHASE
SWITCHING FREQUENCY
DL RISE
10
DH FALL
8
DL FALL
4
5
3000
RISE AND FALL TIMES
vs. TEMPERTURE
6
10
1000
LOAD CAPACITANCE (pF)
DH RISE
12
DH RISE
7000
16
MAX8811toc04
30
5000
fSW = 200kHz
DH/DL LOAD CAPACITANCE (pF)
120
VL_ SUPPLY CURRENT (mA)
600
DL
10
0
MAX8811toc05
400
DL RISE
15
5
50
200
20
100
100
0
MAX8811toc03
350
RISE/FALL TIME (ns)
500
30
MAX8811toc02
600
400
VL_ POWER DISSIPATION (mW)
MAX8811toc01
VL_ POWER DISSIPATION (mW)
700
DL RISE/FALL
vs. LOAD CAPACITANCE
MAX8811toc06
VL_ POWER DISSIPATION vs. PER-PHASE
SWITCHING FREQUENCY
RISE/FALL TIME (ns)
100
80
60
40
20
2
3000pF LOAD
0
0
0
0
2000
4000
6000
8000
-40
-15
LOAD CAPACITANCE (pF)
10
35
60
85
200
600
fS (kHz)
120
MAX8811toc11
tpDHf
20
400
PROGRAMMABLE DELAY
vs. RDLY
MAX8811toc07
25
100
DELAY (ns)
tpDLr
15
tpDHr
10
80
60
40
tpDLf
5
20
0
0
-40
-15
10
35
TEMPERATURE (°C)
4
0
TEMPERATURE (°C)
PROPAGATION DELAY
vs. TEMPERATURE
TIME (ns)
MAX8811
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
60
85
0
10 20 30 40 50 60 70 80 90 100
RDLY (kΩ)
_______________________________________________________________________________________
800
1000
High-Speed, Dual-Phase Driver with
Integrated Boost Diodes
VBST_ AND VL_ WAVEFORMS
SWITCHING WAVEFORMS
MAX8811toc10
MAX8811toc09
VL (AC-COUPLED)
500mV/div
VPWM
5V/div
VLX
10V/div
VBST (AC-COUPLED)
200mV/div
VDL
5V/div
VDH
5V/div
VLX
10div
fSW = 250kHz
1μs/div
100ns/div
Pin Description
PIN
NAME
1
BST1
FUNCTION
2
DH1
High-Side Gate-Driver Output for Phase 1. DH1 is pulled low during shutdown and UVLO.
3
LX1
Inductor Connection for Phase 1
4
VL1
Gate-Drive Supply for DL1. Connect VL1 to a 4.5V to 7V supply. VL1 must be connected to VL2
externally. Bypass the VL1/VL2 connection with a 2.2µF or larger ceramic capacitor to the power ground
plane.
5
DL1
Low-Side Gate-Driver Output for Phase 1. DL1 is pulled low during shutdown and UVLO.
6
PGND1
7
EN
Enable Input. Drive EN high for normal operation, or low for shutdown.
8
DLY
Delay Time Setting Input. Connect a resistor from DLY to PGND1 to set the dead time between DL falling
and DH rising, or connect DLY to VL1 to use the default delay.
Boost Capacitor Connection for Phase 1. Connect a 0.22µF ceramic capacitor between BST1 and LX1.
Power Ground for DL1. Connect PGND1 and PGND2 to the power ground plane at the IC.
9
PWM1
PWM Logic Input for Phase 1. DH1 is high when PWM1 is high; DL1 is high when PWM1 is low.
10
PWM2
PWM Logic Input for Phase 2. DH2 is high when PWM2 is high; DL2 is high when PWM2 is low.
11
PGND2
12
DL2
Low-Side Gate-Driver Output for Phase 2. DL2 is pulled low during shutdown and UVLO.
13
VL2
Gate-Drive Supply for DL2. Connect VL2 to a 4.5V to 7V supply. VL1 must be connected to VL2
externally. Bypass the VL1/VL2 connection with a 2.2µF or larger ceramic capacitor to the power ground
plane.
14
LX2
Inductor Connection for Phase 2
15
DH2
High-Side Gate-Driver Output for Phase 2. DH2 is pulled low during shutdown and UVLO.
16
BST2
Boost Capacitor Connection for Phase 2. Connect a 0.22µF ceramic capacitor between BST2 and LX2.
Power Ground for DL2. Connect PGND1 and PGND2 to the power ground plane at the IC.
_______________________________________________________________________________________
5
MAX8811
Typical Operating Characteristics (continued)
(VVL1 = VVL2 = VEN = VDLY = 6.5V, 3000pF capacitive load, TA = +25°C, unless otherwise noted.)
MAX8811
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
DHON
DHLO
BST1
DH1
LX1
DLON
DLLO
VL1
DL1
PGND1
PWM1
PHASE 1
EN
EN
LOGIC
VL1
UVLO
LX1 LOW
DETECT
MAX8811
VL2
PHASE 2
PWM2
DHON
DHLO
BST2
DH2
LX2
DLON
DLLO
VL2
DL2
PGND2
LX2 LOW
DETECT
Figure 1. Functional Diagram
tpDHf
tpDLf
PWM
DL
tfDL
tpDHr
tpDLr
trDL
(tDLY)*
LX
trDH
tfDH
DH
*WHEN RDLY IS USED, tpDHr BECOMES THE USER-PROGRAMMABLE TIME DELAY, tDLY. DRAWING IS NOT TO SCALE.
Figure 2. Driver Timing Diagram
6
_______________________________________________________________________________________
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
Principles of Operation
MOSFET Gate Drivers (DH_, DL_)
DH_ is driven high when the PWM_ is high; DL_ is driven high when PWM_ is low. PWM pulsewidths under
20ns (typ) are rejected, and no switching occurs.
The low-side drivers (DL_) have typical 0.9Ω sourcing
resistance and 0.4Ω sinking resistance, and are capable
of driving 3000pF capacitive loads with 11ns typical rise
and 8ns typical fall times. The high-side drivers (DH_)
have typical 1.0Ω sourcing resistance and 0.7Ω sinking
resistance, and are capable of driving 3000pF capacitive loads with 14ns typical rise and 9ns typical fall times.
This facilitates fast switching, reducing switching losses,
and makes the MAX8811 ideal for both high-frequency
and high-output current applications.
Shoot-Through Protection
Adaptive shoot-through protection is incorporated for
the switching transition after the high-side MOSFET is
turned off and before the low-side MOSFET is turned
on. The low-side driver is turned on when the LX voltage falls below 2.5V, or after 135ns typical delay,
whichever occurs first. Furthermore, the delay time
between the low-side MOSFET turn-off and high-side
MOSFET turn-on can be adjusted by selecting the
value of R1 (see the Setting the Dead Time section).
Undervoltage Lockout (UVLO)
When the voltage at the VL1/VL2 connection is below
the UVLO threshold, all driver outputs are held low. This
prevents switching when the supply voltage is too low
for proper operation.
Thermal Protection
Thermal-overload protection limits total power dissipation in the MAX8811. When the junction temperature
exceeds +165°C, all driver outputs are held low. The IC
resumes normal operation after the junction temperature cools by 15°C (typ).
Boost Capacitor Selection
The MAX8811 uses a bootstrap circuit to generate the
supply voltages for the high-side drivers (DH_). The selected high-side MOSFET determines the appropriate boost
capacitance values, according to the following equation:
CBST =
QGATE
ΔVBST
Table 1. Components for Figure 3, 800kHz,
20A/Phase Typical Application Circuit
DESIGNATION
DESCRIPTION
MANUFACTURER
C1
2 x 10µF ±20%, X7R
25V capacitor
12103D106MAT2W
AVX
C2
2 x 10µF ±20%, X7R
25V capacitor
12103D106MAT2W
AVX
C3
2.2µF ±20%, 10V X5R
capacitor
GRM39X5R225K10
Murata
C4, C5
0.22µF ±20%, 10V
X7R capacitors
GRM39X7R224K10
Murata
C6–C9
100µF ±20%, 6.3V
X5R capacitors
C3225X5R0J107M
TDK
L1, L2
0.2µH, 28A inductors
FDV0630R20M,1.9mΩ DCR
TOKO
Q1, Q3
HAT2168, 8mΩ, 30V
MOSFET
Renesas
Q2
2 x HAT2164H, 3mΩ,
30V, MOSFET
Renesas
Q4
2 x HAT2164H, 3mΩ,
30V MOSFET
Renesas
R1
Dead-time delay
programming resistor;
see Programmable
Delay vs. RDLY in the
Typical Operating
Characteristics
—
where QGATE is the total gate charge of the high-side
MOSFET and ΔVBST is the voltage variation allowed on
the high-side MOSFET drive. Choose ΔVBST = 0.1V to
0.2V when determining CBST. Low-ESR ceramic capacitors should be used.
VL_ Decoupling
VL1 and VL2 provide the supply voltage for the low-side
drivers. The decoupling capacitors at VL_ also charge the
BST capacitors during the time period when DL_ is high.
Therefore, the decoupling capacitor C3 for VL_ should be
large enough to minimize the ripple voltage during
switching transitions. Choose the VL capacitor approximately 10 times the value of the BST capacitor value.
_______________________________________________________________________________________
7
MAX8811
Detailed Description
MAX8811
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
Table 2. Components for Figure 4, 300kHz,
30A/Phase Typical Application Circuit
DESIGNATION
DESCRIPTION
MANUFACTURER
C1
2 x 10µF ±20%, X7R
25V capacitor
12103D106MAT2W
AVX
C2
2 x 10µF ±20%, X7R
25V capacitor
12103D106MAT2W
AVX
C3
2.2µF ±20%, 10V X5R
capacitor
GRM39X5R225K10
Murata
0.22µF ±20%, 10V
X7R capacitors
GRM39X7R224K10
Murata
C4, C5
C6, C7, C8
2700µF ±20%, 6.3V
capacitors
MFZ series, 7mΩ max
ESR
Rubycon
T50183, 250nH
inductors at 35A
±20%, 0.68mΩ DCR
Falco Electronics
Q1
2 x HAT2168, 8mΩ,
30V MOSFET
Renesas
Q2
2 x HAT2164H, 3mΩ,
30V MOSFET
Renesas
Q3
2 x HAT2168, 8mΩ,
30V MOSFET
Renesas
2 x HAT2164H, 3mΩ,
30V MOSFET
Renesas
Power Dissipation
Power dissipation in the IC package comes mainly from
switching the MOSFETs. Therefore, it is a function of
both switching frequency and the total gate charge of
the selected MOSFETs. The total power dissipation
when both drivers are switching is given by:
PIC = 2 × fS × [N × QG _ TOTAL _ HS ×
RHS
+ M x QG _ TOTAL _ LS ×
RHS + (RG _ HS / N)
(
RLS
)
RLS + RG _ LS / M
Setting the Dead Time
Connect DLY to VL_ for the default delay time, typically
14ns. To increase the delay between the low-side
MOSFET drive turn-off and the high-side MOSFET turnon, connect a resistor from DLY to PGND1. See the
Typical Operating Characteristics section for a plot of
the delay time vs. resistor value. The equation for this
resistor is:
tDLY = 14µs + (1pF) x RDLY
8
At high input voltages, fast turn-on of the high-side
MOSFET could momentarily turn on the low-side MOSFET due to the high dV/dt appearing at the drain of the
low-side MOSFET. The high dV/dt causes a current flow
through the Miller capacitance (CRSS) and the input
capacitance (CISS) of the low-side MOSFET. Improper
selection of the low-side MOSFET that has a high ratio
of CRSS/CISS makes the problem more severe. To avoid
the problem, give special attention to the ratio of
C RSS /C ISS when selecting the low-side MOSFET.
Adding a resistor between BST_ and the BST_ capacitor slows the high-side MOSFET turn-on. Adding a
capacitor from the gate to the source of the high-side
MOSFET has the same effect. However, both methods
are at the expense of increasing the switching losses.
Applications Information
L1, L2
Q4
Avoiding dV/dt-Induced
Low-Side MOSFET Turn-On
] × VPV _ + VVCC × IVCC
where fS is the switching frequency, QG_TOTAL_HS is
the total gate charge of the selected high-side MOSFET, Q G_TOTAL_LS is the total gate charge of the
selected low-side MOSFET, N is the total number of the
high-side MOSFETs in parallel, M is the total number of
the low-side MOSFETs in parallel, VVL is the voltage at
VL, RHS is the on-resistance of the high-side MOSFET,
and RG_LS is the gate resistance of the selected lowside MOSFETs.
_______________________________________________________________________________________
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
2) Minimize the high-current loops from the input capacitor, upper switching MOSFET, and low-side MOSFET
back to the input capacitor negative terminal.
3) Provide enough copper area at and around the
switching MOSFETs and inductors to aid in thermal
dissipation.
4) Connect PGND1 and PGND2 as close as possible
to the source of the low-side MOSFETs.
5) Keep LX1 and LX2 away from sensitive analog components and nodes.
6) Gate drive traces should be at least 20 mils wide,
kept as short as possible, and tightly coupled to
reduce EMI and ringing induced by high-frequency
gate noise. Adjacent DH_ and LX_ traces should be
tightly coupled.
A sample evaluation layout is available in the MAX8811
Evaluation Kit.
Chip Information
PROCESS: BiCMOS
_______________________________________________________________________________________
9
MAX8811
PCB Layout
The MAX8811 sources and sinks large currents to drive
MOSFETs at high switching speeds. The high di/dt can
cause unacceptable ringing if the trace lengths and
impedances are not well controlled. The following PCB
layout guidelines are recommended when designing
with the MAX8811:
1) Place all decoupling capacitors as close to their
respective pins as possible.
MAX8811
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
GATE-DRIVE SUPPLY
4.5V TO 7V
VIN = 12V
C1
VL1
DH1
DLY
BST1
VL2
LX1
Q1
C4
R1
L1
VOUT
C6
C3
DL1
C7
C8
Q2
PGND1
MAX8811
BST2
DH2
ON
EN
OFF
C2
Q3
C5
PWM1
LX2
PWM2
DL2
L2
Q4
PGND2
PWM CONTROL
SIGNALS
Figure 3. 800kHz, 20A/Phase Typical Application Circuit
GATE-DRIVE SUPPLY
4.5V TO 7V
VIN = 12V
C1
VL1
DH1
DLY
BST1
VL2
LX1
Q1
C4
L1
VOUT
C3
DL1
C6
Q2
C7
C8
PGND1
MAX8811
ON
OFF
EN
C2
BST2
DH2
Q3
C5
PWM1
LX2
PWM2
DL2
PWM CONTROL
SIGNALS
L2
Q4
PGND2
Figure 4. 300kHz, 30A/Phase Typical Application Circuit
10
______________________________________________________________________________________
C9
High-Speed, Dual-Phase Driver
with Integrated Boost Diodes
QSOP.EPS
PACKAGE OUTLINE, QSOP .150", .025" LEAD PITCH
21-0055
F
1
1
Revision History
Pages changed at Rev 1: 1, 2, 7, 8, 11
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 11
© 2007 Maxim Integrated Products
aBobl
is a registered trademark of Maxim Integrated Products, Inc.
MAX8811
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
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