SCOPE:
CMOS, 12-BIT BUFFERED, MULTIPLYING D/A CONVERTER
Device Type
01
02
03
04
Generic Number
MX7545S(x)/883B
MX7545T(x)/883B
MX7545U(x)/883B
MX7545GU(x)/883B
Case Outline(s). The case outlines shall be designated in Mil-Std-1835 and as follows:
Outline Letter
Mil-Std-1835
Q
GDIP1-T20 or CDIP2-T20
E
CQCC1-N20
Case Outline
20 LEAD CERDIP
20 LCC
Package Code
J20
L20
Absolute Maximum Ratings:
VREF to GND ..............................................................................................…….. -0.3V, + 17V
Digital Input to DGND ...............................................................................…..... -0.3V to VDD
VRFB to GND .........................................................................................................……... ±25V
VREF to GND ..........................................................................................................….…. ±25V
VOUT1 to AGND ........................................................................................……... -0.3V to VDD
AGND to DGND ........................................................................................……. -0.3V to VDD
Lead Temperature (soldering, 10 seconds) ....................................................................... +300°C
Storage Temperature .......................................................................................... -65°C to +150°C
Continuous Power Dissipation .........................................................................……... TA=+70°C
20 pin CERDIP(derate 11.1mW/°C above +70°C) ..................................................……. 889mW
20 pin LCC(derate 9.1mW/°C above +70°C) ........................................................……... 727mW
Junction Temperature TJ .....................................................................................……... +150°C
Thermal Resistance, Junction to Case, ΘJC
20 pin CERDIP................................................................................................…….... 40°C/W
20 pin LCC .....................................................................................................…….... 20°C/W
Thermal Resistance, Junction to Ambient, ΘJA:
20 pin CERDIP...............................................................................................……..... 90°C/W
20 pin LCC ...................................................................................................………. 110°C/W
Recommended Operating Conditions
Ambient Operating Range (TA) ........................................................………... -55°C to +125°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
----------------------------
Electrical Characteristics of MX7545/883B
19-2454
Page 2 of
Rev. B
7
TABLE 1. ELECTRICAL TESTS:
Symbol
CONDITIONS
-55 °C ≤TA≤ +125°C 1/
Unless otherwise specified
ACCURACY
Resolution NOTE 2
RES
VDD=+5V and +15V
Relative Accuracy
RA
VDD=+5V and +15V
TEST
Group A
Subgroup
12-bit monotonic, VDD=+5V and
+15V
VDD=5V
Gain Error
NOTE 3
±1.0
1,2,3
01
02
±20
±10
1
2,3
03
±5.0
±6.0
NOTE 3
1,2,3
AE
1
2,3
Gain Temperature
Coefficient NOTE 2
TCAE
Power Supply Rejection
PSRR
01
02
03,04
01
02
03
04
All
1
2,3
All
∆VDD=±5%, VDD=15V
1
2,3
1
2,3
4
All
Out1 Leakage Current
IOUT1
VDD=+5V & +15V, ___ __
D0-D11=0V, WR=CS=0V
Output Current Settling
Time
NOTE 2
tSL
Output Current Settling
Time
NOTE 2
tSL
Feedthrough Error
NOTE 2, NOTE 4
FTE
VDD=5V, To ±0.5LSB. OUT1 load
is 100Ω| | 13pF, from___
__
falling edge of WR with CS
=0V
VDD=15V. To ±0.5LSB. OUT1 load
is 100Ω, output measured from
trailing edge of ___
__
WR with CS=0V
VREF=±10V, 10kHz sine wave
VDD=5V
1.0
2.0
±25
±15
±10
±6.0
±7.0
±5
Electrical Characteristics of MX7545/883B
LSB
LSB
LSB
ppm/°C
±10
±0.015
±0.03
%/%
All
±0.01
±0.02
±10
±200
2
µs
4
All
2
µs
4
All
10
VREF=±10V, 10kHz sine wave
VDD=15V
----------------------------
LSB
04
VDD=+5V
VDD=+15V
∆VDD=±5%, VDD=5V
Units
Bits
02,03,
04
1
2,3
Gain Error
12
01
AE
VDD=15V
Limits
Max
±2.0
±1.0
±0.5
±4.0
1,2,3
1,2,3
DNL
Limits
Min
All
10-bit monotonic, VDD=+5V and
+15V
Differential Nonlinearity
Device
type
19-2454
Page 3 of
Rev. B
7
nA
mVp-p
Symbol
CONDITIONS
-55 °C ≤TA≤ +125°C 1/
Unless otherwise specified
Input Resistance
Digital Input High
Voltage
RIN
VIH
VDD=+5V and +15V
VDD=+5V
Digital Input Low
Voltage
VIL
TEST
Digital Input Leakage
Current
Digital Input Capacitance
NOTE 2
Output Capacitance
NOTE 2
Group A
Device
type
Limits
Min
Limits
Max
1,2,3
All
7
2.4
25
1,2,3
All
Subgroup
VDD=+15V
VDD=+5V
IIN
CIN
COUT1
0.8
All
4
All
Data-Setup Time
NOTE 5
Data-Hold Time NOTE 5
Supply Current
V
1.5
±1.0
±10
5
µA
20
pF
D0-D11, VIN=0V, VDD=15V
___ __
WR, CS, VIN=0V, VDD=15V
VDD=5V
___ __
D0-D11=0V, WR, CS=0V
5
20
70
pF
200
4
Chip Select to Write-Hold
Time NOTE 5
Write Pulse Width NOTE
5
All
1
2,3
___ __
VDD=5V
D0-D11=VDD, WR, CS=0V
Chip Select to WriteSetup Time NOTE 5
kΩ
V
13.5
1,2,3
VDD=+15V
VIN=0V or VDD
VDD=+5V or +15V
D0-D11, VDD=5V
___ __
WR, CS, VDD=5V
Units
tCS
VDD=15V
___ __
D0-D11=0V, WR, CS=0V
70
VDD=15V
___ __
D0-D11=VDD, WR, CS=0V
VDD=5V
200
380
9
tCH
VDD=15V
VDD=+5V and +15V
tWR
VDD=+5V
tDS
All
9
All
tCS≥tWR, tCH≥0, VDD=15V
VDD=5V
ns
ns
240
210
VDD=15V
VDD=+5V and +15V
All digital inputs VIL or VIH
VDD=+5V and +15V
9
1,2,3
All digital inputs 0V or VDD
VDD=+5V and +15V
1
2,3
Electrical Characteristics of MX7545/883B
ns
200
0
400
All
All
ns
120
30
ns
2.0
All
IDD
----------------------------
All
9
9
tDH
All
µA
100
500
19-2454
Page 4 of
Rev. B
7
NOTE 1:
NOTE 2:
NOTE 3:
NOTE 4:
NOTE 5:
VDD=+15V, VOUT1=0V; VREF=+10V, AGND=DGND, unless otherwise specified.
Characteristics supplied for use as a typical design limit, but not production tested.
Measured using internal feedback resistor and includes effect of 5ppm max gain TC.
Feedthrough error can be reduced by connecting the metal lid on the package to ground.
Timing Diagram. See Commercial Datasheet
ORDERING INFORMATION:
Package
Pkg. Code
01
20 pin CERDIP
J20
01
20 pin LCC
L20
02
20 pin CERDIP
J20
02
20 pin LCC
L20
03
20 pin CERDIP
J20
03
20 pin LCC
L20
04
20 pin CERDIP
J20
04
20 pin LCC
L20
MAXIM PART #
MX7545SQ/883B
MX7545SE/883B
MX7545TQ/883B
MX7545TE/883B
MX7545UQ/883B
MX7545UE/883B
MX7545GUQ/883B
MX7545GUE/883B
TERMINAL CONNECTIONS:
J20 & L20
Pin
1
OUT1
2
AGND
3
DGND
4
D11(MSB)
5
D10
6
D9
7
D8
8
D7
9
D6
10
D5
11
D4
12
D3
13
D2
14
D1
15
D0(LSB)
16
__
CS
17
___
WR
18
VDD
19
VREF
20
RFB
----------------------------
Electrical Characteristics of MX7545/883B
19-2454
Page 5 of
Rev. B
7
QUALITY ASSURANCE
Sampling and inspection procedures shall be in accordance with MIL-Prf-38535, Appendix A as specified in MilStd-883.
Screening shall be in accordance with Method 5004 of Mil-Std-883. Burn-in test Method 1015:
1. Test Condition, A, B, C, or D.
2. TA = +125°C minimum.
3. Interim and final electrical test requirements shall be specified in Table 2.
Quality conformance inspection shall be in accordance with Method 5005 of Mil-Std-883, including Groups A, B,
C, and D inspection.
Group A inspection:
1. Tests as specified in Table 2.
2. Selected subgroups in Table 1, Method 5005 of Mil-Std-883 shall be omitted.
Group C and D inspections:
a. End-point electrical parameters shall be specified in Table 1.
b. Steady-state life test, Method 1005 of Mil-Std-883:
1. Test condition A, B, C, D.
2. TA = +125°C, minimum.
3. Test duration, 1000 hours, except as permitted by Method 1005 of Mil-Std-883.
TABLE 2.
ELECTRICAL TEST REQUIREMENTS
Mil-Std-883 Test Requirements
Interim Electric Parameters
Method 5004
Final Electrical Parameters
Method 5005
Group A Test Requirements
Method 5005
Group C and D End-Point Electrical Parameters
Method 5005
*
**
Subgroups
per Method 5005, Table 1
1
1*, 2, 3, 9
1, 2, 3, 4**, 9
1
PDA applies to Subgroup 1 only.
Subgroup 4 shall be tested at initial qualification and upon redesign. Sample size will
be 116 units.
----------------------------
Electrical Characteristics of MX7545/883B
19-2454
Page 6 of
Rev. B
7