OP37FP

Datasheet OP37 Low Noise, Precision, High Speed Operational Amplifier The OP37 provides the same high performance as the OP27, but the design is optimized for circuits with gains greater than five. This design change increases slew rate to 17 V/µs and gain-bandwidth product to 63 MHz. The OP37 provides the low offset and drift of the OP07 plus higher speed and lower noise. Offsets down to 25 µV and a maximum drift of 0.6 µV/°C make the OP37 ideal for precision instrumentation applications. Exceptionally low noise (en= 3.5 nV/ @ 10 Hz), a low 1/f noise corner frequency of 2.7 Hz, and the high gain of 1.8 million, allow accurate high-gain amplification of low-level signals. Rochester Electronics Manufactured Components Rochester branded components are manufactured using either die/wafers purchased from the original suppliers or Rochester wafers recreated from the original IP. All re-creations are done with the approval of the Original Component Manufacturer (OCM). Parts are tested using original factory test programs or Rochester developed test solutions to guarantee product meets or exceeds the OCM data sheet. Quality Overview • ISO-9001 • AS9120 certification • Qualified Manufacturers List (QML) MIL-PRF-35835 • Class Q Military • Class V Space Level • Qualified Suppliers List of Distributors (QSLD) • Rochester is a critical supplier to DLA and meets all industry and DLA standards. Rochester Electronics, LLC is committed to supplying products that satisfy customer expectations for quality and are equal to those originally supplied by industry manufacturers. The original manufacturer’s datasheet accompanying this document reflects the performance and specifications of the Rochester manufactured version of this device. Rochester Electronics guarantees the performance of its semiconductor products to the original OCM specifications. ‘Typical’ values are for reference purposes only. Certain minimum or maximum ratings may be based on product characterization, design, simulation, or sample testing. FOR REFERENCE ONLY © 2019 Rochester Electronics, LLC. All Rights Reserved 04082019 To learn more, please visit www.rocelec.com a Low Noise, Precision, High Speed Operational Amplifier (A VCL > 5) OP37 The output stage has good load driving capability. A guaranteed swing of 10 V into 600 W and low output distortion make the OP37 an excellent choice for professional audio applications. FEATURES Low Noise, 80 nV p-p (0.1 Hz to 10 Hz) 3 nV/÷Hz @ 1 kHz Low Drift, 0.2
V/C High Speed, 17 V/
s Slew Rate 63 MHz Gain Bandwidth Low Input Offset Voltage, 10
V Excellent CMRR, 126 dB (Common-Voltage @ 11 V) High Open-Loop Gain, 1.8 Million Replaces 725, OP-07, SE5534 In Gains > 5 Available in Die Form PSRR and CMRR exceed 120 dB. These characteristics, coupled with long-term drift of 0.2 mV/month, allow the circuit designer to achieve performance levels previously attained only by discrete designs. Low-cost, high-volume production of the OP37 is achieved by using on-chip zener-zap trimming. This reliable and stable offset trimming scheme has proved its effectiveness over many years of production history. GENERAL DESCRIPTION The OP37 brings low-noise instrumentation-type performance to such diverse applications as microphone, tapehead, and RIAA phono preamplifiers, high-speed signal conditioning for data acquisition systems, and wide-bandwidth instrumentation. The OP37 provides the same high performance as the OP27, but the design is optimized for circuits with gains greater than five. This design change increases slew rate to 17 V/ms and gain-bandwidth product to 63 MHz. PIN CONNECTIONS The OP37 provides the low offset and drift of the OP07 plus higher speed and lower noise. Offsets down to 25 mV and a maximum drift of 0.6 mV/∞C make the OP37 ideal for precision instrumentation applications. Exceptionally low noise (en= 3.5 nV/ @ 10 Hz), a low 1/f noise corner frequency of 2.7 Hz, and the high gain of 1.8 million, allow accurate high-gain amplification of low-level signals. 8-Lead Hermetic DIP (Z Suffix) Epoxy Mini-DIP (P Suffix) 8-Lead SO (S Suffix) The low input bias current of 10 nA and offset current of 7 nA are achieved by using a bias-current cancellation circuit. Over the military temperature range this typically holds IB and IOS to 20 nA and 15 nA respectively. VOS TRIM 1 8 VOS TRIM –IN 2 7 V+ +IN 3 6 OUT V– 4 5 NC OP37 NC = NO CONNECT SIMPLIFIED SCHEMATIC V+ R3 Q6 R1* 1 8 VOS ADJ. C2 R4 Q22 R2* R23 Q21 Q24 Q23 Q46 C1 R24 R9 Q20 Q1A Q1B Q2B Q19 OUTPUT R12 Q2A NON-INVERTING INPUT (+) C3 R5 C4 Q3 INVERTING INPUT (–) Q11 Q26 Q12 Q27 Q45 Q28 *R1 AND R2 ARE PERMANENTLY ADJUSTED AT WAFER TEST FOR MINIMUM OFFSET VOLTAGE. V– REV. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 © Analog Devices, Inc., 2002 OP37 ABSOLUTE MAXIMUM RATINGS 4 ORDERING GUIDE Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Internal Voltage (Note 1 ) . . . . . . . . . . . . . . . . . . . . . . . . . 22 V Output Short-Circuit Duration . . . . . . . . . . . . . . . . . Indefinite Differential Input Voltage (Note2) . . . . . . . . . . . . . . . . . 0.7 V Differential Input Current (Note 2) . . . . . . . . . . . . . . . . 25 mA Storage Temperature Range . . . . . . . . . . . . . –65∞C to +150∞C Operating Temperature Range OP37A . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55∞C to +125∞C OP37E (Z) . . . . . . . . . . . . . . . . . . . . . . . . . . –25∞C to +85∞C OP37E, OP-37F (P) . . . . . . . . . . . . . . . . . . . . . 0∞C to 70∞C OP37G (P, S, Z) . . . . . . . . . . . . . . . . . . . . . –40∞C to +85∞C Lead Temperature Range (Soldering, 60 sec) . . . . . . . . 300∞C Junction Temperature . . . . . . . . . . . . . . . . . . –45∞C to +150∞C JA3 JC Unit 8-Lead Hermetic DIP (Z) 148 8-Lead Plastic DIP (P) 103 8-Lead SO (S) 158 16 43 43 ∞C/W ∞C/W ∞C/W Package Type TA = 25∞C VOS MAX (
V) 25 25 60 100 100 CerDIP 8-Lead OP37AZ* OP37EZ OP37GZ Plastic 8-Lead Operating Temperature Range OP37EP OP37FP* OP37GP OP37GS MIL IND/COM IND/COM XIND XIND *Not for new design, obsolete, April 2002. NOTES 1 For supply voltages less than 22 V, the absolute maximum input voltage is equal to the supply voltage. 2 The OP37’s inputs are protected by back-to-back diodes. Current limiting resistors are not used in order to achieve low noise. If differential input voltage exceeds 0.7 V, the input Current should be limited to 25 mA. 3 ␪JA is specified for worst case mounting conditions, i.e., ␪JA is specified for device in socket for TO, CerDIP, P-DIP, and LCC packages; ␪JA is specified for device soldered to printed circuit board for SO package. 4 Absolute maximum ratings apply to both DICE and packaged parts, unless otherwise noted. CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the OP37 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –2– WARNING! ESD SENSITIVE DEVICE REV. B OP37 SPECIFICATIONS ( V = 15 V, T = 25C, unless otherwise noted.) S Parameter Input Offset Voltage Long-Term Stability Input Offset Current Input Bias Current Input Noise Voltage Input Noise Voltage Density Large Signal Voltage Gain Output Voltage Swing Min OP37A/E Typ Max Min OP37F Typ Max Min OP37G Typ Max Symbol Conditions VOS Note 1 10 25 20 60 30 100 mV VOS/Time Notes 2, 3 0.2 1.0 0.3 1.5 0.4 2.0 mV/Mo IOS 7 35 9 50 12 75 nA IB ± 10 ± 40 ± 12 ± 55 ± 15 ± 80 nA Unit enp-p 1 Hz to 10 Hz3, 5 0.08 0.18 0.08 0.18 0.09 0.25 mV p-p en fO = 10 Hz3 fO = 30 Hz3 fO = 1000 Hz3 3.5 3.1 3.0 5.5 4.5 3.8 3.5 3.1 3.0 5.5 4.5 3.8 3.8 3.3 3.2 8.0 5.6 4.5 nV/÷ Hz fO = 10 Hz3, 6 fO = 30 Hz3, 6 fO = 1000 Hz3, 6 1.7 1.0 0.4 4.0 2.3 0.6 1.7 1.0 0.4 4.0 2.3 0.6 1.7 1.0 0.4 0.6 Input Noise Current Density iN Input Resistance Differential Mode Input Resistance Common Mode Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio A RIN Note 7 1.3 RINCM 6 0.9 3 IVR 45 0.7 2.5 pA/÷ Hz 4 MW 2 GW ± 11 ± 12.3 ± 11 ± 12.3 ± 11 ± 12.3 V 114 126 106 123 100 120 dB CMRR VCM = ± 11 V PSSR VS = ± 4 V to ± 18 V AVO RL ≥ 2 kW, VO = ± 10 V RL ≥ 1 kW, Vo = ± 10 V RL ≥ 600 W, VO = ± 1 V, V S ± 44 RL ≥ 2 kW RL ≥ 600 W RL ≥ 2k W4 ± 12.0 ± 13.8 ± 10 ± 11.5 11 17 ± 12.0 ± 13.8 ± 10 ± 11.5 11 17 ± 11.5 ± 13.5 ± 10 ± 11.5 11 17 V V V/ms fO = 10 kHz4 fO = 1 MHz 45 45 45 63 40 MHz MHz 70 W VO Slew Rate SR Gain Bandwidth Product GBW Open-Loop Output Resistance RO Power Consumption Pd Offset Adjustment Range 1 10 1 10 2 20 mV/ V 1000 1800 1000 1800 700 1500 V/mV 800 1500 800 1500 400 1500 V/mV 250 700 250 700 200 500 V/mV 63 40 VO = 0, IO = 0 70 VO = 0 90 RP = 10 kW ±4 63 40 70 140 90 ±4 140 100 ±4 170 mW mV NOTES 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up. 2 Long term input offset voltage stability refers to the average trend line of V OS vs. Time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in V OS during the first 30 days are typically 2.5 mV—refer to typical performance curve. 3 Sample tested. 4 Guaranteed by design. 5 See test circuit and frequency response curve for 0.1 Hz to 10 Hz tester. 6 See test circuit for current noise measurement. 7 Guaranteed by input bias current. REV. B –3– OP37–SPECIFICATIONS Electrical Characteristics ( V = 15 V, –55C < T < +125C, unless otherwise noted.) S Parameter Input Offset Voltage Average Input Offset Drift Input Offset Current Input Bias Current Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio A OP37C Typ Max Unit 25 30 100 mV 0.2 0.6 0.4 1.8 mV/∞C IOS 15 50 30 135 nA IB ± 20 ± 60 ± 35 ± 150 nA Min Conditions VOS Note 1 10 TCVOS TCVOSN Note 2 Note 3 IVR Large-Signal Voltage Gain CMRR VCM = ± 10 V PSRR VS = ± 4.5 V to ± 18 V AVO Output Voltage Swing OP37A Typ Symbol VO Max Min ± 10.3 ± 11.5 ± 10.2 ± 11.5 V 108 122 94 116 dB 2 16 4 51 mV/ V RL ≥ 2 kW, VO = ± 10 V 600 1200 300 800 V/mV RL ≥ 2 kW ± 11.5 ± 13.5 ± 10.5 ± 13.0 V (VS = 15 V, –25C < TA < +85C for OP37EZ/FZ, 0C < TA < 70C for OP37EP/FP, and –40C < TA Electrical Characteristics < +85C for OP37GP/GS/GZ, unless otherwise noted.) Parameter Input Offset Voltage Average Input Offset Drift Input Offset Current Input Bias Current Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain Output Voltage Swing Symbol Conditions Min OP37E Typ Max Min OP37F Typ Max Min OP37C Typ Max Unit 20 50 40 140 55 220 mV 0.2 0.6 0.3 1.3 0.4 1.8 mV/∞C IOS 10 50 14 85 20 135 nA IB ± 14 ± 60 ± 18 ± 95 ± 25 ± 150 nA VOS TCVOS TCVOSN Note 2 Note 3 IVR CMRR VCM = ± 10 V PSRR VS = ± 4.5 V to ± 18 V AVO VO ± 10.5 ± 11.8 ± 10.5 ± 11.8 ± 10.5 ± 11.8 V 108 100 94 dB 122 2 RL ≥ 2 kW, VO = ± 10 V 750 RL ≥ 2 kW ± 11.7 ± 13.6 15 1500 119 2 700 1300 ± 11.4 ± 13.5 16 116 4 32 mV/ V 450 1000 V/mV ± 11 ± 13.3 V NOTES 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. A/E grades guaranteed fully warmed up. 2 The TC VOS performance is within the specifications unnulled or when nulled withRP = 8 kW to 20 kW. TC VOS is 100% tested for A/E grades, sample tested for F/G grades. 3 Guaranteed by design. –4– REV. B OP37 BINDING DIAGRAM 1 1990 1427U 8 1. 2. 3. 4. 6. 7. 8. NULL (–) INPUT (+) INPUT V– OUTPUT V+ NULL 2 3 7 6 4 Wafer Test Limits Parameter Input Offset Voltage Input Offset Current Input Bias Current Input Voltage Range Common Mode Rejection Ratio Power Supply Rejection Ratio Large-Signal Voltage Gain (VS = 15 V, TA = 25C for OP37N, OP37G, and OP37GR devices; TA = 125C for OP37NT and OP37GT devices, unless otherwise noted.) Symbol Conditions OP37NT Limit OP37N Limit OP37GT Limit OP37G Limit OP37GR Limit Unit VOS Note 1 60 35 200 60 100 mV MAX IOS 50 35 85 50 75 nA MAX IB ± 60 ± 40 ± 95 ± 55 ± 80 nA MAX IVR ± 10.3 ± 11 ± 10.3 ± 11 ± 11 V MIN 108 114 100 106 100 dB MIN 10 10 10 20 mV/V MAX CMRR VCM = ± 11 V PSRR TA = 25∞C, VS = ± 4 V to ± 18 V 10 TA = 125∞C, VS = ± 4.5 V to ± 18 V 16 AVO RL ≥ 2 kW, VO = ± 10 V RL ≥ 1 kW, VO = ± 10 V Output Voltage Swing VO Power Consumption RL ≥ 2 kW RL ≥ 600 kW Pd VO = 0 600 1000 500 800 ± 11.5 mV/V MAX 20 ± 12 ± 10 1000 700 800 ± 11 140 V/mV MIN V/mV MIN ± 12 ± 10 ± 11.5 ± 10 V MIN V MIN 140 170 mW MAX NOTES For 25∞C characterlstics of OP37NT and OP37GT devices, see OP37N and OP37G characteristics, respectively. Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. REV. B –5– OP37 Typical Electrical Characteristics (V = 15 V, T = 25C, unless otherwise noted.) S Parameter Average Input Offset Voltage Drift Average Input Offset Current Drift Average Input Bias Current Drift Input Noise Voltage Density OP37NT Typical OP37N Typical OP37GT Typical OP37G Typical OP37GR Typical Unit TCVOS or Nulled or Unnulled TCVOSN RP = 8 kW to 20 kW 0.2 0.2 0.3 0.3 0.4 mV/∞C TCIOS 80 80 130 130 180 pA/∞C TCIB 100 100 160 160 200 pA/∞C fO = 10 Hz fO = 30 Hz fO = 1000 Hz 3.5 3.1 3.0 3.5 3.1 3.0 3.5 3.1 3.0 3.5 3.1 3.0 3.8 3.3 3.2 nV/÷Hz nV/÷Hz nV/÷Hz fO = 10 Hz fO = 30 Hz fO = 1000 Hz 1.7 1.0 0.4 1.7 1.0 0.4 1.7 1.0 0.4 1.7 1.0 0.4 1.7 1.0 0.4 pA/÷ Hz pA/÷ Hz pA/÷ Hz 0.1 Hz to 10 Hz RL ≥ 2k W 0.08 17 0.08 17 0.08 17 0.08 17 0.09 17 mV p-p V/ms fO = 10 kHz 63 63 63 63 63 MHz Symbol en Input Noise Current Density in Input Noise Voltage A en p-p Slew Rate SR Gain Bandwidth Product GBW Conditions –6– REV. B Typical Performance Characteristics– OP37 VOLTAGE NOISE – nV/ Hz 90 70 60 50 TEST TIME OF 10sec MUST BE USED TO LIMIT LOW FREQUENCY ( 3 kW. The only exception is when gain error is important. Figure 7 illustrates the 10 Hz noise. As expected, the results are between the previous two figures. For reference, typical source resistances of some signal sources are listed in Table I. –12– REV. B OP37 by only 0.7 dB. With a 1 kW source, the circuit noise measures 63 dB below a 1 mV reference level, unweighted, in a 20 kHz noise bandwidth. Table I. Device Source Impedance Straln Gauge