2N3904

TO-92 Plastic-Encapsulate Transistors 2N3904 TRANSISTOR (NPN) TO-92 FEATURE NPN silicon epitaxial planar transistor for switching and Amplifier applications As complementary type, the PNP transistor 2N3906 is Recommended This transistor is also available in the SOT-23 case with the type designation MMBT3904 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 40 6 0.2 0.625 150 -55-150 Units V V V A W ℃ ℃ 1. EMITTER 2. BASE 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Collector cut-off Emitter cut-off current current current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 DC current gain hFE2 hFE3 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) fT td tr ts tf Test conditions MIN 60 40 6 0.1 0.1 0.1 100 60 30 0.3 0.95 300 35 35 200 50 V V MHZ ns ns ns ns 400 TYP MAX UNIT V V V μA μA μA IC=10μA, IE=0 IC= 1mA , IB=0 IE= 10μA, IC=0 VCB=60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=1V, VCE=1V, VCE=1V, IC=10mA IC=50mA IC=100mA IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=20V,IC=10mA,f=100MHz VCC=3V,VBE=0.5V, IC=10mA,IB1=1mA VCC=3V, IC=10mA IB1=IB2=1mA CLASSIFICATION Rank Range OF hFE1 O 100-200 Y 200-300 G 300-400 Typical Characteristics 2N3904