2N5401

TO-92 Plastic-Encapsulate Transistors 2N5401 TRANSISTOR (PNP) TO-92 FEATURE Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.160v) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -160 -150 -5 -0.6 0.625 150 -55-150 Units V V V A W ℃ ℃ 1.EMITTER 2.BASE 3.COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) Test conditions MIN -160 -150 -5 -50 -50 80 60 50 -0.5 -1 100 300 V V MHz 240 TYP MAX UNIT V V V IC= -100μA, IE=0 IC= -1mA, IB=0 IE= -10μA, IC=0 VCB= -120 V, VEB= -3V, IC=0 VCE= -5V, IC=-1 mA VCE= -5V, IC= -10 mA VCE= -5V, IC=-50 mA IC= -50mA, IB= -5 mA IC= -50mA, IB= -5 mA VCE=-5V, IC=-10mA IE=0 nA nA fT f =30MHz Typical Characteristics 2N5401