2N5550

2N5550, 2N5551 Preferred Device Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* • Device Marking: Device Type, e.g., 2N5550, Date Code COLLECTOR 3 2 BASE MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD 625 5.0 PD 1.5 12 TJ, Tstg −55 to +150 W mW/°C °C 55xx Y WW Specific Device Code = Year = Work Week mW mW/°C 12 TO−92 CASE 29 STYLE 1 3 2N 55xx YWW 2N5550 2N5551 140 160 6.0 600 160 180 Unit Vdc Vdc Vdc mAdc 1 EMITTER MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient Thermal Resistance, Junction−to−Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 2N5550/D June, 2004 − Rev. 3 2N5550, 2N5551 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0 ) Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5550 2N5551 2N5550 2N5551 2N5550 2N5551 VCE(sat) Both Types 2N5550 2N5551 VBE(sat) Both Types 2N5550 2N5551 − − − 1.0 1.2 1.0 − − − 0.15 0.25 0.20 Vdc 60 80 60 80 20 30 − − 250 250 − − Vdc − 2N5550 2N5551 2N5550 2N5551 IEBO V(BR)CEO 2N5550 2N5551 V(BR)CBO 2N5550 2N5551 V(BR)EBO ICBO − − − − − 100 50 100 50 50 nAdc mAdc nAdc 160 180 6.0 − − − Vdc 140 160 − − Vdc Vdc Symbol Min Max Unit (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. fT Cobo Cibo 2N5550 2N5551 hfe NF 2N5550 2N5551 100 − 300 6.0 MHz pF pF − − 50 30 20 200 − dB − − 10 8.0 2 2N5550, 2N5551 ORDERING INFORMATION Device 2N5550 2N5550RLRA 2N5550RLRP 2N5550RLRPG 2N5551 2N5551G 2N5551RL1 2N5551RLRA 2N5551RLRM 2N5551RLRP 2N55551ZL1 Package TO−92 TO−92 TO−92 TO−92 (Pb−Free) TO−92 TO−92 (Pb−Free) TO−92 TO−92 TO−92 TO−92 TO−92 Shipping† 5,000 Unit / Bulk 2,000 Tape & Reel 2,000 Tape & Ammo Box 2,000 Tape & Ammo Box 5,000 Unit / Bulk 5,000 Unit / Bulk 2,000 Tape & Reel 2,000 Tape & Reel 2,000 Tape & Ammo Box 2,000 Tape & Ammo Box 2,000 Tape & Ammo Box †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 500 300 h FE, DC CURRENT GAIN 200 100 −55 °C 50 30 20 10 7.0 5.0 0.1 TJ = 125°C 25°C VCE = 1.0 V VCE = 5.0 V 0.2 0.3 0.5 0.7 1.0 3.0 2.0 5.0 7.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 70 100 Figure 1. DC Current Gain 3 2N5550, 2N5551 VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 101 VCE = 30 V IC, COLLECTOR CURRENT ( µA) 100 10−1 10−2 10−3 10−4 10−5 0.4 TJ = 125°C 75°C REVERSE 25°C FORWARD IC = ICES 0.3 0.1 0.2 0 0.1 0.2 0.3 0.4 VBE, BASE−EMITTER VOLTAGE (VOLTS) 0.5 0.6 Figure 3. Collector Cut−Off Region θV, TEMPERATURE COEFFICIENT (mV/°C) 1.0 0.8 V, VOLTAGE (VOLTS) TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0 − 0.5 − 1.0 − 1.5 − 2.0 − 2.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 qVB for VBE(sat) qVC for VCE(sat) TJ = − 55°C to +135°C VBE(sat) @ IC/IB = 10 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 Figure 4. “On” Voltages Figure 5. Temperature Coefficients 4 2N5550, 2N5551 100 70 50 10.2 V Vin 10 ms INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 mF C, CAPACITANCE (pF) VBB −8.8 V 100 RB 5.1 k Vin 100 1N914 3.0 k VCC 30 V RC Vout 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 Cibo Cobo TJ = 25°C Values Shown are for IC @ 10 mA VR, REVERSE VOLTAGE (VOLTS) Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 500 300 t, TIME (ns) 200 100 50 30 20 10 0.2 0.3 0.5 td @ VEB(off) = 1.0 V VCC = 120 V tr @ VCC = 30 V IC/IB = 10 TJ = 25°C tr @ VCC = 120 V 5000 3000 2000 1000 500 300 200 100 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 50 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 100 200 ts @ VCC = 120 V tf @ VCC = 120 V tf @ VCC = 30 V IC/IB = 10 TJ = 25°C Figure 8. Turn−On Time t, TIME (ns) Figure 9. Turn−Off Time 5 2N5550, 2N5551 PACKAGE DIMENSIONS TO−92 TO−226AA CASE 29−11 ISSUE AL A R P L SEATING PLANE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 −−− 0.250 −−− 0.080 0.105 −−− 0.100 0.115 −−− 0.135 −−− MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 −−− 6.35 −−− 2.04 2.66 −−− 2.54 2.93 −−− 3.43 −−− K XX G H V 1 D J C SECTION X−X N N DIM A B C D G H J K L N P R V STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR