2SA1020

TO-92L Plastic-Encapsulate Transistors 2SA1020 TRANSISTOR (PNP) TO-92L 1. EMITTER 2. COLLECTOR FEATURES Power amplifier applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -5 -2 900 150 -55-150 Units V V V A mW ℃ ℃ 3. BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time VCE(sat) VBE(sat) fT Cob ton ts tf VCC=-30V,IB1=-IB2=-0.05A, IC=-1A VCE=-2V,IC=-1.5A IC=-1A,IB=-50mA IC=-1A,IB=-50mA VCE=-2V,IC=-500mA VCB=-10V,IE=0,f=1MHz 100 40 0.1 1 0.1 40 -0.5 -1.2 V V MHz pF μs μs μs Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) Test conditions MIN -50 -50 -5 -1 -1 70 240 TYP MAX UNIT V V V µA µA IC =-100µA,IE=0 IC =-10mA,IB=0 IE=-100µA,IC=0 VCB=-50V,IE=0 VEB=-5V,IC=0 VCE=-2V,IC=-0.5A CLASSIFICATION OF Rank Range hFE(1) O 70-140 Y 120-240 Typical Characteristics 2SA1020