2SA684

TO-92L Plastic-Encapsulate Transistors 2SA684 FEATURES ∙ Automatic insertion by radial taping possible. · Complementary pair with 2SC1384. 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) TO-92L 123 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value -60 -50 -5 -1 0.75 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test unless otherwise specified) MIN -60 -50 -5 -0.1 85 50 -0.2 -0.85 200 20 30 -0.4 -1.2 V V MHz pF 340 TYP MAX UNIT V V V μA conditions IC=-10uA, IE=0 IC=-2mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VCE=-10V, IC=-500mA VCE=-5V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IE=50mA, f=200MHz VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF Rank Range hFE(1) Q 85-170 R 120-240 S 170-340 Typical Characteristics 2SA684