2SC1384

TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR (NPN) TO-92L FEATURES Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Storage Temperature 2SC1383 30 25 5 1 1 150 -55-150 2SC1384 60 50 Units V V V A W ℃ ℃ 1.EMITTER 2.COLLECTOR 3.BASE 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage 2SC1383 2SC1384 Collector-emitter breakdown voltage 2SC1383 2SC1384 Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT VCE=5V, IC=1A IC=500m A,IB=50mA IC=500mA,IB=50mA VCE=10V,IC=50mA 200 50 0.4 1.2 V V MHz Test conditions MIN 30 60 25 50 5 0.1 85 340 TYP MAX UNIT V V V μA IC=10μA ,IE=0 IC=2mA , IB=0 IE= 10μA, IC=0 VCB=20V, IE=0 VCE=10V, IC=500mA CLASSIFICATION OF hFE(1) Rank Range Q 85-170 R 120-240 S 170-340 Typical Characteristics 2SC1383,4