2SD1616A

TO-92 Plastic-Encapsulate Transistors 2SD1616A FEATURE Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 120 60 6 1 750 150 -55 to150 Units V V V A mW ℃ ℃ 123 TRANSISTOR (NPN) TO-92 1. EMITTER 2. COLLECTOR 3. BSAE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage * Base-emitter saturation voltage * Base-emitter voltage * Transition frequency Output capacitance Turn on time Storage time Fall time *pulse test: PW≤350µS, δ≤2%. Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) VBE fT Cob ton tS tF Vcc=10V, IC=100mA, IB1=-IB2=10mA Test conditions MIN 120 60 6 0.1 0.1 135 81 0.3 1.2 0.6 100 19 0.07 0.95 0.07 0.7 V V V MHz pF μs μs μs 600 TYP MAX UNIT V V V μA μA IC= 10μA , IE=0 IC= 2mA , IB=0 IE= 10μA, IC=0 VCB=60V, IE=0 VEB=6V, IC=0 VCE=2 V, IC= 100mA VCE=2 V, IC= 1A IC= 1A, IB=50mA IC= 1A, IB=50mA VCE= 2V, IC=50mA VCE=2 V, IC= 100mA VCB=10 V,IE= 0, f=1MHz CLASSIFICATION OF hFE1 Rank Range L 135-270 K 200-400 U 300-600 Typical Characteristics 2SD1616A