8550S

TO-92 8550S TRANSISTOR (PNP) FEATURE Excellent hFE linearity Plastic-Encapsulate Transistors TO-92 1. 2. 3. EMITTER COLLECTOR BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction Temperature Junction and Storage Temperature Value -40 -25 -5 -500 625 150 -55-150 Units V V V mA mW ℃ ℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT VCE= -1V, IC= -500mA IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=- 6V, IC=-20mA f =30MHz 150 50 -0.6 -1.2 V V MHz Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) Test conditions MIN -40 -25 -5 -0.1 -0.1 -0.1 85 400 TYP MAX UNIT V V V uA uA uA IC= -100uA, IE=0 IC= -1mA, IB=0 IE= -100uA, IC=0 VCB= -40V, IE=0 VCE= -20V,IB=0 VEB= - 3V, IC=0 VCE= -1V, IC= -50mA CLASSIFICATION OF hFE(1) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 Typical Characteristics 8550S