A44

TO-92 Plastic-Encapsulate Transistors A44 FEATURES High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 400 400 5 0.2 0.625 150 -55 to +150 Units V V V A W ℃ ℃ 2. BASE TRANSISTOR (NPN) TO-92 1. EMITTER 3. COLLECTOR 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE (1) DC current gain hFE(2) hFE(3) hFE(4) Collector-emitter saturation voltage Base-emitter sataration voltage Transition frequency VCE(sat) VCE(sat) VBE(sat) fT Test conditions MIN 400 400 5 0.1 5 0.1 80 70 40 80 0.2 0.3 0.75 50 V V V MHz 300 TYP MAX UNIT V V V μA μA μA IC= 100μA , IE=0 IC= 1mA , IB=0 IE=100μA, IC=0 VCB=400 V, IE=0 VCE=400 V VEB= 4V, IC=0 VCE=10V , IC=10mA VCE=10V, IC=1mA VCE=10V, IC=100mA VCE=10V, IC=50mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB= 1mA VCE=20V, IC=10mA f =30MHz CLASSIFICATION OF hFE(1) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-300