A94

TO-92 Plastic-Encapsulate Transistors A94 FEATURES High voltage MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -400 -400 -5 -0.2 0.625 150 -55 to +150 Units V V V A W ℃ ℃ 3. COLLECTOR 123 1. EMITTER 2. BASE TRANSISTOR (PNP) TO-92 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR) CBO V(BR) CEO V(BR) EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) hFE(3) VCE (sat) Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage Transition frequency VBE (sat) fT IC=-50mA, IB=-5mA IC=-10mA, IB= -1mA VCE=-20V, IC=-10mA f =30MHz 50 -0.3 -0.75 V V MHz Test conditions MIN -400 -400 -5 -0.1 -5 -0.1 80 70 60 -0.2 V 300 TYP MAX UNIT V V V μA μA μA IC= -100μA, IE=0 IC= -1mA,IB=0 IE=-100μA,IC=0 VCB=-400V, IE=0 VCE=-400V, IB=0 VEB= -4V, IC=0 VCE=-10V, IC=-10mA VCE=-10V, IC=-1mA VCE=-10V, IC=-100mA IC=-10mA, IB=-1mA