FR105

FR101 THRU FR107 • • • • • Features Low Cost Low Leakage Low Forward Voltage Drop High Current Capability Fast Switching Speed For High Efficiency 1 Amp Silicon Rectifier 50 to 1000 Volts DO-41 Maximum Ratings • • MCC Catalog Number FR101 FR102 FR103 FR104 FR105 FR106 FR107 Device Marking Operating Temperature: -55 °C to +150°C Storage Temperature: -55°C to +150°C Maximum Recurrent Peak Reverse Voltage 50V 100V 200V 400V 600V 800V 1000V Maximum RMS Voltage 35V 70V 40V 280V 420V 560V 700V Maximum DC Blocking Voltage 50V 100V 200V 400V 600V 800V 1000V D --------------- A Cathode Mark B Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward IF(AV) 1A TA = 55°C Current Peak Forward Surge IFSM 30A 8.3ms, half sine Current Maximum IFM = 1.0A; Instantaneous VF 1.3V TA = 25°C Forward Voltage Maximum DC Reverse Current At IR 5.0µA TA = 25°C Rated DC Blocking 100µA TA = 100°C Voltage Maximum Reverse Recovery Time 150ns IF=0.5A, IR=1.0A, FR101-104 Trr 250ns Irr=0.25A FR105 500ns FR106-107 Typical Junction CJ 15pF Measured at Capacitance 1.0MHz, VR=4.0V *Pulse Test: Pulse Width 300 µsec, Duty Cycle 1% D C DIMENSIONS INCHES MIN .166 .080 .028 1.000 MM MIN 4.10 2.00 .70 25.40 DIM A B C D MAX .205 .107 .034 --- MAX 5.20 2.70 .90 --- NOTE FR101 thru FR107 Figure 1 Typical Forward Characteristics 20 10 6 4 1.0 2 Amps 1 .6 .4 .2 .1 .06 .04 .02 .01 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 12 1.4 0 .2 Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 °C Average Forward Rectified Current - Amperes ersus v Ambient Temperature - °C 125 150 175 Amps .4 25°C 1.2 Figure 2 Forward Derating Curve .8 .6 Figure 3 Junction Capacitance 100 60 40 20 pF 10 6 4 2 1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C Junction Capacitance - pFversus Reverse Voltage - Volts FR101 thru FR107 Figure 4 Peak Forward Surge Current 60 50 40 30 Amps 20 10 0 1 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100 2 Figure 5 Reverse Recovery Time Characteristic And Test Circuit Diagram 50Ω 10Ω trr +0.5A 0 25Vdc Pulse Generator Note 2 1Ω Oscilloscope Note 1 -0.25 -1.0 1cm Set Time Base for 20/100ns/cm Notes: 1. Rise Time = 7ns max. Input impedance = 1 megohm, 22pF 2. Rise Time = 10ns max. Source impedance = 50 ohms 3. Resistors are non-inductive