LL4148 SILICON EPITAXIAL PLANAR DIODE
LL-34
fast switching diode in MiniMELF case especially suited for automatic surface mounting. Identical electrically to standard JEDEC 1N4148
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f/50 Hz
O
Symbol VR VRM IO IFRM IFSM Ptot Tj TS
Value 75 100 150
1)
Unit V V mA mA A mW
O
Repetitive Peak Forward Current Peak Forward Surge Current at tp = 1µs Power Dissipation Junction Temperature Storage Temperature Range
1)
500 2 500
1)
175 -65 to +175
C C
O
Valid provided that electrodes are kept at ambient temperature.
LL4148
Characteristics at Tj = 25 OC
Parameter Forward Voltage at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 OC Reverse Breakdown Voltage tested with 100 µA Pulses Capacitance at VF = VR = 0 Voltage Rise when Switching ON tested with 50mA Forward Pulses tp = 0.1 s, Rise Time
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