M8050

SOT-23 M8050 TRANSISTOR (NPN) Plastic-Encapsulate Transistors SOT-23 FEATURES Power dissipation 1. BASE 2. EMITTER MARKING: Y11 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter 3. COLLECTOR Value 40 25 6 0.8 0.2 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Symbol V(BR)CBO V(BR)CEO* V(BR)EBO ICBO ICEO Test conditions MIN 40 25 6 0.1 0.1 45 80 40 0.5 1.2 150 V V MHz 300 MAX UNIT V V V μA μA IC= 100μA, IE=0 IC=1mA , IB=0 IE= 100μA, IC=0 VCB= 35V, IE=0 VCE= 20V, IB=0 VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA IC= 800mA, IB=80mA IC=800mA, IB= 80mA VCE=6V, IC= 20mA , f=30MHz hFE(1) DC current gain hFE(2) hFE（3） VCE(sat) VBE(sat) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency fT * Pulse Test : pulse width ≤ 300µs , duty cycle ≤2%. CLASSIFICATION OF Rank Range hFE(2) L 80-200 H 200-300