MMBT3904

SOT-23 MMBT3904 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-23 FEATURES As complementary type the PNP transistor MMBT3906 is recommended Epitaxial planar die construction MARKING: 1AM MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Value 60 40 6 200 200 625 150 -55 to +150 Units V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Symbol VCBO VCEO VEBO ICBO ICEX IEBO hFE(1) DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time hFE(2) hFE(3) VCE(sat) VBE(sat) Test IC= 10μA, IE=0 IC= 1mA, IB=0 IE=10μA, IC=0 VCB=60V, IE=0 VCE=30V,VBE(off)=3V VEB=5V, IC=0 VCE=1V, IC=10mA VCE=1V, IC= 50mA VCE=1V, IC= 100mA IC=50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 20V, IC= 10mA,f=100MHz VCC=3V,VBE=-0.5V IC=10mA, IB1=-IB2=1.0mA VCC=3.0V,IC=10mAdc IB1=-IB2=1mA 300 35 35 200 50 100 60 30 0.3 0.95 V V MHz nS nS nS nS conditions MIN 60 40 6 0.1 50 0.1 400 MAX UNIT V V V μA nA μA Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off Collector cut-off Emitter cut-off current current current fT td tr ts tf hFE(1) O 100-200 CLASSIFICATION OF Rank Range Y 200-300 G 300-400 Typical Characteristics MMBT3904