MMBT3906

SOT-23 Plastic-Encapsulate Transistors MMBT3906 FEATURES As complementary type, the NPN transistor MMBT3904 is Recommended Epitaxial planar die construction MARKING: 2A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -40 -5 -0.2 0.3 150 -55-150 Units V V V A W ℃ ℃ SOT-23 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Delay Time Rise Time Storage Time Fall Time VCE(sat) VBE(sat) fT td tr ts tf Test IC= -10μA,IE=0 IC= -1mA, IB=0 IE=-10μA, IC=0 VCB= -40V, E=0 VCE=-30V,VBE(off)=-3V VEB= -5V, IC=0 VCE=-1V, IC=-10mA VCE= -1V, IC=-50mA VCE= -1V, IC=-100mA IC=-50mA, IB=-5mA IC=- 50mA, IB=- 5mA VCE=-20V, IC=-10mA, f=100MHz VCC=-3.0V,VBE=-0.5V IC=-10mA,IB1=-1.0mA VCC=-3.0V,IC=-10mA IB1=IB2=-1.0mA 250 35 35 225 75 100 60 30 -0.4 -0.95 V V MHz nS nS nS nS conditions MIN -40 -40 -5 -0.1 -50 -0.1 300 MAX UNIT V V V μA nA μA CLASSIFICATION OF hFE1 Rank Range O 100-200 Y 200-300 Typical Characteristics MMBT3906