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MPSH11

MPSH11

  • 厂商:

    DAYA

  • 封装:

  • 描述:

    MPSH11 - VHF/UHF Transistors - Daya Electric Group Co., Ltd.

  • 详情介绍
  • 数据手册
  • 价格&库存
MPSH11 数据手册
Order this document by MPSH10/D VHF/UHF Transistors NPN Silicon COLLECTOR 3 1 BASE 2 EMITTER MPSH10 MPSH11 Motorola Preferred Devices MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO PD PD TJ, Tstg Value 25 30 3.0 350 2.8 1.0 8.0 – 55 to +150 Unit Vdc Vdc Vdc mW mW/°C Watts mW/°C °C 1 2 3 CASE 29–04, STYLE 2 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 357 125 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 25 Vdc, IE = 0) Emitter Cutoff Current (VEB = 2.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO 25 30 3.0 — — — — — 100 100 Vdc Vdc Vdc nAdc nAdc MPSH10 MPSH11 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 4.0 mAdc, VCE = 10 Vdc) Collector – Emitter Saturation Voltage (IC = 4.0 mAdc, IB = 0.4 mAdc) Base – Emitter On Voltage (IC = 4.0 mAdc, VCE = 10 Vdc) hFE VCE(sat) VBE(on) 60 — — — 0.5 0.95 — Vdc Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 4.0 mAdc, VCE = 10 Vdc, f = 100 MHz) Collector–Base Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Common–Base Feedback Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Collector Base Time Constant (IC = 4.0 mAdc, VCB = 10 Vdc, f = 31.8 MHz) MPSH10 MPSH11 rb’Cc fT Ccb Crb 0.35 0.6 — 0.65 0.9 9.0 ps 650 — — 0.7 MHz pF pF MPSH10 MPSH11 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 2: PIN 1. BASE 2. EMITTER 3. COLLECTOR
MPSH11
1. 物料型号: - MPS H10/D - MPS H11

2. 器件简介: - 这两款型号均为VHF/UHF NPN硅晶体管,适用于高频应用。

3. 引脚分配: - CASE 29-04, STYLE 2 TO-92 (TO-226AA)封装: - 引脚1:基极(Base) - 引脚2:发射极(Emitter) - 引脚3:集电极(Collector)

4. 参数特性: - 最大额定值: - 集电极-发射极电压(VCEO):25Vdc - 集电极-基极电压(VCBO):30Vdc - 发射极-基极电压(VEBO):3.0Vdc - 总器件耗散功率在25°C时(PD):350mW;在25°C以上时每摄氏度2.8mW - 在25°C时的总器件耗散功率(PD):1.0W;在25°C以上时每摄氏度8.0mW - 工作和存储结温范围(TJ,Tstg):-55至+150°C

5. 功能详解: - 关键电气特性包括: - 关断特性:集电极-发射极击穿电压(V(BR)CEO)25Vdc,集电极-基极击穿电压(V(BR)CBO)30Vdc,发射极-基极击穿电压(V(BR)EBO)3.0Vdc。 - 截止电流:集电极截止电流(ICBO)不超过100nA,发射极截止电流(IEBO)不超过100nA。 - 导通特性:直流电流增益(hFE)最小60,集电极-发射极饱和电压(VCE(sat))最大0.5Vdc,基极-发射极导通电压(VBE(on))0.95Vdc。 - 小信号特性:电流增益-带宽积(fT)650MHz,集电极-基极电容(Ccb)0.7pF,共基反馈电容(Crb)0.35-0.9pF,集基时间常数(rb'Cc)9.0ps。

6. 应用信息: - 这两款晶体管适用于VHF/UHF频段的高频应用,如无线通信、雷达系统等。

7. 封装信息: - 封装类型为TO-226AA,具体尺寸和公差遵循ANSI Y14.5M, 1982标准。控制尺寸以英寸为单位,超出尺寸R的封装轮廓不受控制。
MPSH11 价格&库存

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