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RS1GB

RS1GB

  • 厂商:

    DAYA

  • 封装:

  • 描述:

    RS1GB - 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER - Daya Electric Group Co., Ltd.

  • 数据手册
  • 价格&库存
RS1GB 数据手册
RS1A/B - RS1M/B 1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features · · · · · · Glass Passivated Die Construction Fast Recovery Time For High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 30A Peak Ideally Suited for Automated Assembly Plastic Material: UL Flammability Classification Rating 94V-0 B SMA Dim Min 2.29 4.00 1.27 0.15 4.80 0.10 0.76 2.01 Max 2.92 4.60 1.63 0.31 5.59 0.20 1.52 2.62 SMB Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62 A C A B C D E G Mechanical Data · · · · · · · Case: Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Mounting Position: Any Marking: Type Number J D H G E H J A, B, D, G, J, K, M Suffix Designates SMA Package AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 120°C Non-Repetitive Peak Forward Surge Current, 8.3ms single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Drop Peak Reverse Current at Rated DC Blocking Voltage Reverse Recovery Time (Note 3) Typical Junction Capacitance (Note 2) Typical Thermal Resistance, Junction to Terminal (Note 1) Operating and Storage Temperature Range @ IF = 1.0A @ TA = 25°C @ TA = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr Cj RqJT Tj, TSTG RS1 A/AB 50 35 @ TA = 25°C unless otherwise specified RS1 B/BB 100 70 RS1 D/DB 200 140 RS1 G/GB 400 280 1.0 30 1.3 5.0 200 RS1 J/JB 600 420 RS1 K/KB 800 560 RS1 M/MB 1000 700 Unit V V A A V µA 150 15 20 -65 to +150 250 500 ns pF K/W °C Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Reverse Recovery Test Conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 1.0 IF, INSTANTANEOUS FORWARD CURRENT (A) 1.2 10 IO, AVERAGE RECTIFIED CURRENT (A) 0.8 1.0 0.6 0.4 0.1 0.2 Tj = 25°C IF Pulse Width: 300µs 0 25 50 75 100 125 150 175 TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.01 0 0.4 0.8 1.2 1.6 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 30 Single Half-Sine-Wave (JEDEC Method) IR, INSTANTANEOUS REVERSE CURRENT (µA) 1000 Tj = 125°C Tj = 150°C 100 20 10 10 1.0 Tj = 25°C 0 1 10 100 NUMBER OF CYCLES AT 60Hz Fig. 3 Forward Surge Current Derating Curve 0.1 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) Device Under Test 10Ω NI (-) Pulse Generator (Note 2) 0A (+) 50V DC Approx -0.25A (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit