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RS3B

RS3B

  • 厂商:

    DAYA

  • 封装:

  • 描述:

    RS3B - 3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER - Daya Electric Group Co., Ltd.

  • 数据手册
  • 价格&库存
RS3B 数据手册
RS3A - RS3M 3.0A SURFACE MOUNT FAST RECOVERY RECTIFIER Features · · · · · · Glass Passivated Die Construction Fast Recovery Time for High Efficiency Low Forward Voltage Drop and High Current Capability Surge Overload Rating to 100A Peak Ideally Suited for Automatic Assembly Plastic Material: UL Flammability Classification Rating 94V-0 B Dim A SMB Min 3.30 4.06 1.96 0.15 5.00 0.10 0.76 2.00 Max 3.94 4.57 2.21 0.31 5.59 0.20 1.52 2.62 SMC Min 5.59 6.60 2.75 0.15 7.75 0.10 0.76 2.00 Max 6.22 7.11 3.18 0.31 8.13 0.20 1.52 2.62 A C B C D Mechanical Data · · · · · · Case: Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch Marking: Type Number SMB Weight: 0.09 grams (approx.) SMC Weight: 0.20 grams (approx.) J D E G H H G E J All Dimensions in mm AB, BB, DB, GB, JB, KB, MB Suffix Designates SMB Package A, B, D, G, J, K, M Suffix Designates SMC Package Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 75°C Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave Superimposed on Rated Load (JEDEC Method) Forward Voltage Peak Reverse Current at Rated DC Blocking Voltage Maximum Recovery Time (Note 3) Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range @ IF = 3.0A @ TA = 25°C @ TA = 125°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM trr Cj RqJT Tj, TSTG RS3 A/AB 50 35 @ TA = 25°C unless otherwise specified RS3 B/BB 100 70 RS3 D/DB 200 140 RS3 G/GB 400 280 3.0 100 1.3 5.0 250 RS3 J/JB 600 420 RS3 K/KB 800 560 RS3 M/MB 1000 700 Unit V V A A V mA 150 50 25 -65 to +150 250 500 ns pF K/W °C Notes: 1. Thermal resistance: junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pad as heat sink. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. 3. Reverse recovery test conditions: IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2.5 IF, INSTANTANEOUS FORWARD CURRENT (A) 3.0 10 I(AV), AVERAGE FORWARD CURRENT (A) 2.0 1.0 1.5 1.0 0.1 0.5 Tj = 25°C IF Pulse Width: 300 µs 0 25 50 75 100 125 150 175 0.01 0 0.4 0.8 1.2 1.6 TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (µA) Single Half-Sine-Wave (JEDEC Method) 1000 Tj = 125°C 100 100 80 60 10 40 1.0 Tj = 25°C 20 0 1 10 100 0.1 0 20 40 60 80 100 120 140 NUMBER OF CYCLES AT 60 Hz Fig. 3 Forward Surge Current Derating Curve PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 4 Typical Reverse Characteristics trr +0.5A 50Ω NI (Non-inductive) Device Under Test 10Ω NI (-) Pulse Generator (Note 2) 0A (+) 50V DC Approx -0.25A (-) 1.0Ω NI Oscilloscope (Note 1) (+) Notes: 1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF. 2. Rise Time = 10ns max. Input Impedance = 50Ω. -1.0A Set time base for 50/100 ns/cm Fig. 5 Reverse Recovery Time Characteristic and Test Circuit

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RS3B-13-F
  •  国内价格
  • 1+0.81879
  • 10+0.7558
  • 30+0.7432
  • 100+0.70542

库存:378