2N3773

DC COMPONENTS CO., LTD. R 2N3773 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high power audio, disk head positioners, and other linear applications . TO-3 Pinning 1 = Base 2 = Emitter Case = Collector .135 Max (3.43) 1.573 Max (39.96) .875(22.23) .759(19.28) .450(11.43) .250(6.35) .480(12.19) .440(11.18) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (continuous) Collector Current (peak) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o Symbol VCBO VCEO VCEX VEBO IC IC PD TJ TSTG Rating 160 140 160 7 16 30 150 +200 -65 to +200 Unit V V V V A A W o o .225(5.72) .205(5.20) .169(4.30) .151(3.84) .043(1.09) .038(0.97) 1.197(30.40) 1.177(29.90) .681(17.30) .655(16.64) 2 .440(11.18) 1.050(26.67) .420(10.67) 1.011(25.68) 1 Case: Collector .169(4.30) .151(3.84) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Collector-Emitter Sustaining Voltage (Ratings at 25 C ambient temperature unless otherwise specified) Symbol VCEO(sus) VCEX(sus) VCER(sus) ICEO Collector Cutoff Current ICEX ICBO Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter On Voltage DC Current Gain (1) (1) Min 140 160 150 15 5 1.5 40 4 Typ - Max 10 2 10 2 5 1.4 4 2.2 60 - Unit V V V mA mA mA mA mA V V V A - Test Conditions IC=0.2A, IB=0 IC=0.1A, VBE(off)=1.5V, RBE=100Ω IC=0.1A, RBE=100Ω VCE=120V, IB=0 VCE=140V, VBE(off)=1.5V VCE=140V, VBE(off)=1.5V, TC=150 C VCB=140V, IE=0 VBE=7V, IC=0 IC=8A, IB=0.8A IC=16A, IB=3.2A IC=8A, VCE=4V IC=8A, VCE=4V IC=16A, VCE=4V VCE=100V, t=1.0s, Non-repetitive IC=1A, VCE=4V, f=1KHz IC=1A, f=50KHz o IEBO VCE(sat)1 VCE(sat)2 VBE(on) hFE1 hFE2 Is/b hfe I hfe I 2% Second Breakdown Collector with Base Forward Bias Small-Signal Current Gain Magnitude of Common-Emitter Small-Signal, Short-Circuit, Forward Current Transfer Ratio (1)Pulse Test: Pulse Width 300µs, Duty Cycle