DC COMPONENTS CO., LTD.
R
2N4403
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose switching and amplifier applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70)
o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -40 -40 -5 -600 625 +150 -55 to +150 Unit V V V mA mW
o o
.050 Typ (1.27)
.022(0.56) .014(0.36) .100 Typ (2.54)
.022(0.56) .014(0.36)
321
.148(3.76) .132(3.36)
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICEX
(1)
Min -40 -40 -5 -0.75 30 60 100 100 20 200 2%
Typ -
Max -0.1 -0.4 -0.75 -0.95 -1.3 300 8.5
Unit V V V µA V V V V MHz pF
Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCE=-35V, VBE=-0.4V IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-150mA, IB=-15mA IC=-500mA, IB=-50mA IC=-0.1mA, VCE=-1V IC=-1mA, VCE=-1V IC=-10mA, VCE=-1V IC=-150mA, VCE=-2V IC=-500mA, VCE=-2V IC=-20mA, VCE=-10V, f=100MHz VCE=-10V, IE=0, f=1MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
(1)
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2
DC Current Gain
(1)
hFE3 hFE4 hFE5
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
fT Cob 380µs, Duty Cycle
Classification of hFE4
Rank Range
A
100~210
B
190~300
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