2N7002

DC COMPONENTS CO., LTD. R 2N7002 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. SOT-23 .020(0.50) .012(0.30) Pinning 1 = Gate 2 = Source 3 = Drain 3 o Absolute Maximum Ratings(TA=25 Characteristic Drain-Source Voltage Drain-Gate Voltage (RGS=1MΩ) Gate-Source Voltage (Continuous) Drain Current (Continuous, TC=25 C) Drain Current (Pulsed) (2) o (1) C) Rating 60 60 20 115 800 200 1.8 -55 to+150 -55 to+150 260 Unit V V V mA mA mW o mW/ C o o o .063(1.60) .055(1.40) .108(0.65) .089(0.25) 1 2 Symbol VDSS VDGR VGS ID IDM PD TJ TSTG TL .091(2.30) .067(1.70) .118(3.00) .110(2.80) .045(1.15) .034(0.85) Total Power Dissipation o Derate above 25 C Operating Junction Temperature Storage Temperature Maximum Lead Temperature, for 10 Seconds Solding Purpose .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Sourse Forward Leakage Current Gate-Sourse Reverse Leakage Current Gate Threshold Voltage On-State Drain Current (2) (2) (2) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) ID(on) VDS(on)1 VDS(on)2 (2) Min 60 1 500 80 - Typ - Max 1 100 -100 2.5 0.375 3.75 7.5 7.5 50 25 5 625 Unit V µA nA nA V mA V V Ω Ω mS pF pF pF o Test Conditions ID=10µA, VGS=0 VDS=60V, VGS=0 VGSF=20V, VDS=0 VGSR=-20V, VDS=0 VDS=2.5V, ID=0.25mA VDS>2VDS(on), VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V ID=50mA, VGS=5V ID=500mA, VGS=10V VDS>2VDS(on), ID=200mA VDS=25V, VGS=0, f=1MHZ - Static Drain-Source On-State Voltage Static Drain-Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) RDS(on)1 RDS(on)2 gFS Ciss Coss Crss RθJA Thermal Resistance, Junction to Ambient C/W (1)The Power Dissipation of the package may result in a lower continuous drain current. (2)Pulse Test: Pulse Width 380µs, Duty Cycle 2%