2SA1015

DC COMPONENTS CO., LTD. R 2SA1015 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -50 -5 -150 400 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -50 -50 -5 70 25 80 2% Typ - Max -0.1 -0.1 -0.3 -1.1 700 7 Unit V V V µA µA V V MHz pF Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA IC=-2mA, VCE=-6V IC=-150mA, VCE=-6V IC=-1mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain (1) (1) VCE(sat) VBE(sat) hFE1 hFE2 fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE1 Rank Range O 70~140 Y 120~240 GR 200~400 BL 350~700