DC COMPONENTS CO., LTD.
R
2SA812
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for audio frequency amplifier applications.
SOT-23
Pinning
1 = Base 2 = Emitter 3 = Collector
1 3
.020(0.50) .012(0.30)
.063(1.60) .055(1.40)
.108(0.65) .089(0.25)
2
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -50 -5 -100 150 +150 -55 to +150 Unit V V V mA mW
o o
.091(2.30) .067(1.70)
.045(1.15) .034(0.85)
.118(3.00) .110(2.80) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09)
C
.004 Max (0.10)
.027(0.67) .013(0.32)
C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min -60 -50 -5 -0.55 90 2%
Typ -0.18 -0.62 200 180 4.5
Max -0.1 -0.1 -0.3 -0.65 600 -
Unit V V V µA µA V V MHz pF
Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-1mA, VCE=-6V IC=-1mA, VCE=-6V IC=-10mA, VCE=-6V VCB=-10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain
(1) (1)
VCE(sat) VBE(on) hFE fT Cob
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
380µs, Duty Cycle
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