2SA812

DC COMPONENTS CO., LTD. R 2SA812 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency amplifier applications. SOT-23 Pinning 1 = Base 2 = Emitter 3 = Collector 1 3 .020(0.50) .012(0.30) .063(1.60) .055(1.40) .108(0.65) .089(0.25) 2 Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -60 -50 -5 -100 150 +150 -55 to +150 Unit V V V mA mW o o .091(2.30) .067(1.70) .045(1.15) .034(0.85) .118(3.00) .110(2.80) .051(1.30) .035(0.90) .026(0.65) .010(0.25) .0043(0.11) .0035(0.09) C .004 Max (0.10) .027(0.67) .013(0.32) C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -60 -50 -5 -0.55 90 2% Typ -0.18 -0.62 200 180 4.5 Max -0.1 -0.1 -0.3 -0.65 600 - Unit V V V µA µA V V MHz pF Test Conditions IC=-100µA, IE=0 IC=-1mA, IB=0 IE=-100µA, IC=0 VCB=-60V, IE=0 VEB=-5V, IC=0 IC=-100mA, IB=-10mA IC=-1mA, VCE=-6V IC=-1mA, VCE=-6V IC=-10mA, VCE=-6V VCB=-10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat) VBE(on) hFE fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle