2SB1426

DC COMPONENTS CO., LTD. R 2SB1426 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for DC-to-DC converter applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -20 -20 -6 -3 750 +150 -55 to +150 Unit V V V A mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -20 -20 -6 82 2% Typ 240 35 Max -100 -100 -500 390 - Unit V V V nA nA mV MHz pF Test Conditions IC=-50µA, IE=0 IC=-1mA, IB=0 IE=-10µA, IC=0 VCB=-20V, IE=0 VEB=-5V, IC=0 IC=-2A, IB=-0.1A IC=-100mA, VCE=-2V IC=-500mA, VCE=-2V, f=100MHz VCB=-10V, f=1MHz, IE=0 VCE(sat) hFE fT Cob 380µs, Duty Cycle Classification of hFE Rank Range P 82~180 Q 120~270 R 180~390