2SC1959

DC COMPONENTS CO., LTD. R 2SC1959 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for audio frequency low-power amplifier applications. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) o o Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PD TJ TSTG o C) Rating 35 30 5 500 500 +150 -55 to +150 Unit V V V mA mW o o .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) 321 .148(3.76) .132(3.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .022(0.56) .014(0.36) Symbol C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 35 30 5 120 40 2% Typ 300 7 Max 0.1 0.1 0.25 1 240 - Unit V V V µA µA V V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, VCE=1V IC=100mA, VCE=1V IC=400mA, VCE=6V IC=20mA, VCE=6V VCB=6V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain (1) (1) VCE(sat) VBE(on) hFE1 hFE2 fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle