2SC945

DC COMPONENTS CO., LTD. R 2SC945 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier applications. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC IB PD TJ TSTG o C) Rating 60 50 5 100 50 250 +150 -55 to +150 Unit V V V mA mA mW o o Symbol .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle Min 60 50 5 50 135 150 2% Typ 0.1 - Max 0.1 0.1 0.3 600 600 4 Unit V V V µA µA V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=60V, IE=0 VEB=5V, IB=0 IC=100mA, IB=10mA IC=0.1mA, VCE=6V IC=1mA, VCE=6V IC=10mA, VCE=6V, f=100MHz VCB=10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range Q 135~270 P 200~400 K 300~600