2SD879

DC COMPONENTS CO., LTD. R 2SD879 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1.5V and 3V electronic flash. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEX VCEO VEBO IC IC PD TJ TSTG Rating 30 20 10 6 3 5 750 +150 -55 to +150 Unit V V V V A A mW o o .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic Collector-Base Breakdown Volatge (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEX BVCEO BVEBO ICBO IEBO (1) Min 30 20 10 6 140 - Typ 0.3 210 200 30 Max 100 100 0.4 400 - Unit V V V V nA nA V MHz pF Test Conditions IC=10µA IC=1mA,VBE=3V IC=1mA IE=10µA VCB=20V VBE=4V IC=3A, IB=60mA IC=3A, VCE=2V IC=50mA, VCE=10V VCB=10V, f=1MHz Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain (1) VCE(sat) hFE fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%