2SD965

DC COMPONENTS CO., LTD. R 2SD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use as AF output amplifier and flash unit. TO-92 Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 40 20 7 5 750 +150 -55 to +150 Unit V V V A mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min 40 20 7 230 150 2% Typ 0.35 150 - Max 0.1 0.1 1 800 50 Unit V V V µA µA V MHz pF Test Conditions IC=100µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=10V, IE=0 VEB=7V, IC=0 IC=3A, IB=100mA IC=0.5A, VCE=2V IC=2A, VCE=2V IE=50mA, VCE=6V VCB=20V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain (1) VCE(sat) hFE1 hFE2 fT Cob Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width 380µs, Duty Cycle Classification of hFE1 Rank Range Q 230~380 R 340~600 S 560~800